B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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PDF
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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Original
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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PDF
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ss149
Abstract: transistor s623 Q62702-S623 Q67000-S252
Text: BSS 149 SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● VDS 200 V ID 0.35 A RDS on 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code 2 1 2 3 3 1 Tape and Reel Information Pin Configuration Marking Package
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Q62702-S623
Q67000-S252
E6325:
SS149
ss149
transistor s623
Q62702-S623
Q67000-S252
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PDF
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Untitled
Abstract: No abstract text available
Text: Surface Mount Schottky Diodes Operating Temperature: -65o C to 150°C VF V Max. Part No. Device Marking Code Pd (mW) PIV (V) Min. IR (µA) Max. @ 0.1 mA @ 1.0 mA @ 2.0 mA @ 10 mA @ 15 mA @ 20 mA @ 30 mA @ @ 40/50 100/200 mA mA @ 250 mA TR R (nS) Max. Outline
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BAT54
BAT54A
BAT54C
BAT54S
BAS40
BAS40-04
BAS40-05
BAS40-06
BAS70
BAS70-04
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PDF
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bss 108
Abstract: BSS 97 Q67000-S252 SS149 TRANSISTOR 149
Text: SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSS 149 VDS 200 V ID 0.35 A RDS on 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code BSS 149 Q67000-S252 1 Tape and Reel Information 2 3 Pin Configuration Marking Package
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Q67000-S252
E6325:
SS149
bss 108
BSS 97
Q67000-S252
SS149
TRANSISTOR 149
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PDF
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SS14L
Abstract: SS12L SS13L
Text: Preliminary SS12L THRU SS14L 1.0 AMP. Surface Mount Schottky Barrier Rectifiers Voltage Range 20 to 40 Volts Current 1.0 Ampere Sub SMA Features For surface mounted application Low –PROFILE PACKAGE Ideal for automated placement Low power loss, high efficiency
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Original
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SS12L
SS14L
RS-481
25ambient
SS12L
SS13L-14L
50mVp-p
SS14L
SS13L
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PDF
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Untitled
Abstract: No abstract text available
Text: SS12L-SS14L 1A Surface-mount Schottky Rectifier Voltage Range 20 to 40 Volts FEATURES Sub-SMA For surface-mount applications Low-profile package Ideal for automated placement Low power loss, high efficiency High-temperature soldering: 260°C / 10 seconds at terminals
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Original
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SS12L-SS14L
RS-481
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PDF
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SS14 DIODE schottky
Abstract: ss14 diode specifications DIODE marking code SS14 diode marking ss14 ss14 diode ss14 sma ss12 DIODE marking PK sma
Text: SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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PDF
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SS14 DIODE schottky
Abstract: diode marking ss14 SS14 DIODE DC SS14 diode SS14 application notes DIODE ss14 SMA CASE 403D-02 footprint DIODE marking code SS14 diode SS12 sma Theta-JC, 403D-02
Text: SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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SS12/D
SS14 DIODE schottky
diode marking ss14
SS14 DIODE
DC SS14 diode
SS14 application notes
DIODE ss14
SMA CASE 403D-02 footprint
DIODE marking code SS14
diode SS12 sma
Theta-JC, 403D-02
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PDF
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ss14 diode
Abstract: SS14 application notes SS14 DIODE schottky ss14 SS1x SS14 DC ss12
Text: SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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12copyright
SS12/D
ss14 diode
SS14 application notes
SS14 DIODE schottky
ss14
SS1x
SS14 DC
ss12
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PDF
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SS14 DIODE
Abstract: SS14
Text: SS12, SS13, SS14, SS15, SS16 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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Original
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J-STD-020,
AEC-Q101
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SS14 DIODE
SS14
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PDF
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header 3x2
Abstract: 25 pin parallel connector KobiConn mouser gmk105bj104kv-f header3x2 2 Pin SMD PCB connector 25 pin D-sub ribbon cable smd marking code 3D 609-2841-ND
Text: 5 4 3 2 1 VCTL S1 SS14MDP2 D Cable Assembly used on the 102-0416-03 BOM 1 D 3 VDD CTL1 CTL2 1 3 5 1 3 5 2 4 6 2 4 6 VCTL 2 J1 HEADER 3X2 25-pin parallel connector D-Sub Connector Plug: Mouser 156-1225 D-Sub Connector Hood: Mouser 156-2025 4 S2 SS14MDP2 1 3
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Original
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SS14MDP2
25-pin
609-2841-ND
PE43204
517-3302/16FT
dustrial/components/pdf/AOA0000CE2
20Components/Web
20Data/142-0701-801,
header 3x2
25 pin parallel connector
KobiConn
mouser
gmk105bj104kv-f
header3x2
2 Pin SMD PCB connector
25 pin D-sub ribbon cable
smd marking code 3D
609-2841-ND
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PDF
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Untitled
Abstract: No abstract text available
Text: SS13M/SS14M/SS16M 1.0Amp Surface Mount Schottky Barrier Rectifier Micro SMA Pb RoHS COMPLIANCE Features Cathode Band Very low prfile - typical height of 0.68mm Ideal for automated placement Low forward voltage drop. Low power loss. High efficiency Meet MSL level 1, per J-STD-020D
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Original
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SS13M/SS14M/SS16M
J-STD-020D
22-A111
2002/95/EC
2002/96/EC
SS13M/SS14M/SS16M)
SS16M
SS13M/SS14M
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PDF
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JESD22-B102D
Abstract: J-STD-002B J-STD-020D SS14M Micro Inverter
Text: SS13M/SS14M/SS16M 1.0Amp Surface Mount Schottky Barrier Rectifier Micro SMA Pb RoHS COMPLIANCE Features Very low profile - typical height of 0.68mm Ideal for automated placement Low forward voltage drop. Low power loss. High efficiency 0.106 2.70 0.091(2.30)
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Original
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SS13M/SS14M/SS16M
J-STD-020D,
22-A111
2002/95/EC
2002/96/EC
SS13M/SS14M/SS16M)
SS16M
SS13M/SS14M
JESD22-B102D
J-STD-002B
J-STD-020D
SS14M
Micro Inverter
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and
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Original
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SS13M
SS16M
J-STD-020
2011/65/EU
2002/96/EC
AEC-Q101
JESD22-B102
D1308025
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PDF
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Untitled
Abstract: No abstract text available
Text: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020
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Original
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SS13M
SS16M
J-STD-020
2011/65/EU
2002/96/EC
JESD22-B102
D1308025
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PDF
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Untitled
Abstract: No abstract text available
Text: SS12LS thru SS115LS Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Ideal for automated placement - Compact package size, profile <0.85mm - High surge current capability - Low power loss, high efficiency - AEC-Q101 qualified and Halogen free only
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Original
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SS12LS
SS115LS
AEC-Q101
J-STD-020
2011/65/EU
2002/96/EC
OD123HE
D1406025
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PDF
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SS14 SOD123
Abstract: FM1150
Text: FM120-M+ FM120LS WILLAS THRUTHRU 1.0A SCHOTTKY BARRIER RECTIFIERS - 20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SMA-LS PACKAGE FM1200-M+ FM1200LS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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Original
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OD-123+
FM120-M
FM1200-M
OD-123H
RS-481-A
SS14 SOD123
FM1150
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PDF
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SS14 DIODE schottky
Abstract: DIODE ss14 SS14 DC DC SS14 diode 403D SS12T3 SS12T3G SS14 SS14T3 SS14T3G
Text: SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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SS12/D
SS14 DIODE schottky
DIODE ss14
SS14 DC
DC SS14 diode
403D
SS12T3
SS12T3G
SS14
SS14T3
SS14T3G
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PDF
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SS16MHRSG
Abstract: No abstract text available
Text: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020
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Original
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SS13M
SS16M
J-STD-020
2011/65/EU
2002/96/EC
AEC-Q101
JESD22-B102
D1406008
SS16MHRSG
|
PDF
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Untitled
Abstract: No abstract text available
Text: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020
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Original
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SS13M
SS16M
J-STD-020
2011/65/EU
2002/96/EC
JESD22-B102
D1308025
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PDF
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s149
Abstract: transistor Siemens 14 S S 92
Text: SIEMENS SIPMOS Small-Signal Transistor • • • • • • • B SS 149 Vos 200 V ID 0.35 A ^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Inform ation PinC onfigu ration Marking
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OCR Scan
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E6325:
SS149
Q62702-S623
Q67000-S252
s149
transistor Siemens 14 S S 92
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PDF
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8065S
Abstract: No abstract text available
Text: SIPMOS Small-Signal Transistor • • • • • • • BSS 149 Vx 200 V /D 0.35 A ^DS on 3-5 N channel Depletion mode High dynamic resistance Available grouped in Vqs^ Type Ordering Code BSS 149 Q67000-S252 Tape and Reel information Pin Gonfigu ration Marking Package
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OCR Scan
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E6325:
SS149
Q67000-S252
8065S
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PDF
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bss149
Abstract: No abstract text available
Text: BSS 149 I nf ine on technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 200 V 0.35 A ^DS on 3.5 Cl N channel Depletion mode High dynamic resistance Available grouped in VQSOh) ID Type Ordering Code Tape and Reel Information Pin C onfigu ration Marking
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OCR Scan
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Q62702-S623
Q67000-S252
E6325:
SS149
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
bss149
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PDF
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