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    MARKING CODE W1S Search Results

    MARKING CODE W1S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    74LVCH16501APF8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APV Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation

    MARKING CODE W1S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Transistor BFT 92W

    Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
    Text: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		OT-323 Q62702-F1681 900MHz Dec-11-1996 Transistor BFT 92W 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681 PDF

    30227

    Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
    Text: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		OT-23 Q62702-F1062 900MHz Dec-13-1996 30227 Transistor BFT 10 Q62702-F1062 w1s sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN/PNP Silicon AF Transistor Array 5  High breakdown voltage 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 Transistors in one package 2 Tape loading orientation 1 Marking on SC74 package (for example W1s)


    Original     		SMBTA06UPN VPW09197 EHA07177 PDF

    infineon marking W1s SOT23

    Abstract: BFT92 w1s sot23 marking W1S sot23 30227 BCW66 E6327
    Text: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


    Original     		BFT92 VPS05161 15rements infineon marking W1s SOT23 BFT92 w1s sot23 marking W1S sot23 30227 BCW66 E6327 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 • For mixer applications in the VHF / UHF range 5 • For high-speed switching applications 6 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


    Original     		68-08S OT-363 VPS05604 EHA07193 EHA07291 68-08S Q62702-A1344 OT-363 EHD07102 EHD07103 PDF

    marking code 62 3 pin diode

    Abstract: No abstract text available
    Text: BAT 62-08S Silicon Schottky Diode Array Preliminary data 4 • Low barrier diode for detectors up to GHz 5 6 frequencies Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 2 1 3


    Original     		62-08S OT-363 VPS05604 EHA07193 EHA07291 62-08S Q62702-A1343 OT-363 D07060 EHD07061 marking code 62 3 pin diode PDF

    infineon marking W1s SOT23

    Abstract: marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23
    Text: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 30 mA 2 3 • Complementary type: BFR92P NPN 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFT92 Marking W1s Pin Configuration


    Original     		BFT92 BFR92P infineon marking W1s SOT23 marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 5 2 6 • Two galvanic internal isolated NPN/PNP 1 Transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101


    Original     		SMBTA06UPN EHA07177 PDF

    MARKING CODE CCB

    Abstract: infineon marking W1s marking code w1s SC74 SMBTA06UPN
    Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 5 2 6 • Two galvanic internal isolated NPN/PNP 1 Transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


    Original     		SMBTA06UPN EHA07177 MARKING CODE CCB infineon marking W1s marking code w1s SC74 SMBTA06UPN PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage • Low collector-emitter saturation voltage 4 3 5 • Two galvanic internal isolated NPN/PNP 2 6 1 Transistor in one package Tape loading orientation Top View 6 5 4 Marking on SC74 package


    Original     		SMBTA06UPN EHA07177 PDF

    marking WPs

    Abstract: No abstract text available
    Text: BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2 =22 kΩ)


    Original     		BCR22PN EHA07176 OT-363 EHA07193 OT363 marking WPs PDF

    MARKING CODE wus SOT363

    Abstract: BCR-35PN MARKING CODE W1s MARKING WUs Infineon BCR35PN
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1 =10 kΩ, R2 =47 kΩ)


    Original     		BCR35PN EHA07176 OT-363 EHA07193 OT363 MARKING CODE wus SOT363 BCR-35PN MARKING CODE W1s MARKING WUs Infineon BCR35PN PDF

    marking CODE 1BS

    Abstract: 1BS transistor BC817UPN BCW66H SC74 marking code w1s transistor 1Bs TRANSISTOR marking CB code
    Text: BC817UPN NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-emitter saturation voltage 1 • Two galvanic internal isolated NPN/PNP transistors in one package • Pb-free (RoHS compliant) package 1)


    Original     		BC817UPN EHA07177 marking CODE 1BS 1BS transistor BC817UPN BCW66H SC74 marking code w1s transistor 1Bs TRANSISTOR marking CB code PDF

    infineon marking W1s

    Abstract: marking code w1s marking W1S Marking w1s sot
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original     		BCR10PN EHA07176 OT-363 EHA07193 OT363 infineon marking W1s marking code w1s marking W1S Marking w1s sot PDF

    transistor 1Bs

    Abstract: 1BS MARKING CODE B 817 c marking CODE 1BS infineon marking W1s marking code w1s
    Text: BC817UPN NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-emitter saturation voltage 1 • Two galvanic internal isolated NPN/PNP transistors in one package • Pb-free (RoHS compliant) package


    Original     		BC817UPN EHA07177 transistor 1Bs 1BS MARKING CODE B 817 c marking CODE 1BS infineon marking W1s marking code w1s PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original     		BCR10PN EHA07176 OT-363 EHA07193 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)


    Original     		BCR08PN EHA07176 OT-363 EHA07193 PDF

    infineon marking W1s

    Abstract: BCR108S BCR22PN marking code w1s
    Text: BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2=22 kΩ)


    Original     		BCR22PN EHA07176 OT-363 EHA07193 infineon marking W1s BCR108S BCR22PN marking code w1s PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		BFT92W Q62702-F1681 OT-323 900MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration


    OCR Scan     		Q62702-F1062 OT-23 BFT92 H35bD5 900MHz PDF

    Marking W1s

    Abstract: bft92 w1s sot23
    Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Type Marking Ordering Code


    OCR Scan     		OT-23 Q62702-F1062 BFT92 900MHz Marking W1s bft92 w1s sot23 PDF

    TRANSISTOR MARKING YB

    Abstract: sot36 3904P marking code Yb Transistor 70 sot3-6
    Text: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package -Q - Marking on SOT-3 6 3 package (for example W1sj


    OCR Scan     		3904PN Q62702-C OT-363 3904PN TRANSISTOR MARKING YB sot36 3904P marking code Yb Transistor 70 sot3-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Top View Morking on SOI-db.} pockooe (for example W1s corresponds to pin I ol device Direction of Unreeling


    OCR Scan     		BFS17S Q62702-F1645 OT-363 B235b05 235b05 012215t. G125157 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration BFT 92W W1s


    OCR Scan     		Q62702-F1681 OT-323 0122E04 900MHz D1525D5 PDF