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    MARKING CODE W2 SOT23 Search Results

    MARKING CODE W2 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    54LS190/BEA Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE W2 SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SOT23 W1P

    Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
    Text: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23


    Original     		BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323 PDF

    L282 ST

    Abstract: L281 L282 TL431 TS3431 SOT-23-3Lpackage sot23 L282 ST TL431 SOT-23 MARKING AKV
    Text: TS3431 1.24V PROGRAMMABLE SHUNT VOLTAGE REFERENCE • ADJUSTABLE OUTPUT VOLTAGE 1.24 to 24V ■ SEVERAL PRECISION @ 25°C ±2%, ±1% and ±0.5% ■ SINK CURRENT CAPABILITY 0.4 to 100mA ■ INDUSTRIAL TEMPERATURE RANGE: -40 to +125°C L SOT23-3L Plastic Micropackage


    Original     		TS3431 100mA OT23-3L TL431 TS3431 OT23-3 L282 ST L281 L282 TL431 SOT-23-3Lpackage sot23 L282 ST TL431 SOT-23 MARKING AKV PDF

    5630 SOT23

    Abstract: FDN5630
    Text: FDN5630 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23


    Original     		FDN5630 5630 SOT23 FDN5630 PDF

    5630 PKG

    Abstract: 5630 SOT23 marking code 10 sot23 FDN5630
    Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23


    Original     		FDN5630 5630 PKG 5630 SOT23 marking code 10 sot23 FDN5630 PDF

    5630 PKG

    Abstract: FDN5630 sot23 footprint
    Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23


    Original     		FDN5630 5630 PKG FDN5630 sot23 footprint PDF

    MARKING W3 SOT23 TRANSISTOR

    Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps PDF

    pn2222a fairchild

    Abstract: MARKING W2 SOT23 TRANSISTOR marking A06 amplifier MARKING CODE A06 a06 transistor
    Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		MPSA06 MMBTA06 PZTA06 MPSA06 MMBTA06 OT-23 OT-223 PZTA06 pn2222a fairchild MARKING W2 SOT23 TRANSISTOR marking A06 amplifier MARKING CODE A06 a06 transistor PDF

    MARKING W3 SOT23 TRANSISTOR

    Abstract: SOT23-3 JEDEC standard orientation sot23 mark E coding MARKING W2 SOT23 TRANSISTOR sot-23 marking code w2 transistor marking code ne SOT-23 FAIRCHILD SOT-223 MARK WC SOT23-3 marking code fs 1 sot 223 wc sot23
    Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		MPSA06 MMBTA06 PZTA06 MPSA06 MMBTA06 OT-23 OT-223 MARKING W3 SOT23 TRANSISTOR SOT23-3 JEDEC standard orientation sot23 mark E coding MARKING W2 SOT23 TRANSISTOR sot-23 marking code w2 transistor marking code ne SOT-23 FAIRCHILD SOT-223 MARK WC SOT23-3 marking code fs 1 sot 223 wc sot23 PDF

    DO214AC

    Abstract: DO219AB DO35 DO41 B15800 GS08
    Text: Vishay Semiconductors Taping of Diodes Axial Lead Components Diodes and rectifiers with axial leads are normally delivered in taped form according to IEC 286-1 see figure 1 . The cathode side is designated by a colored tape. Taped devices are normally delivered in ammo-


    Original     		09-Aug-06 DO214AC DO219AB DO35 DO41 B15800 GS08 PDF

    marking code w2 sot23

    Abstract: MARKING W2 SOT23 SOD80 marking SOD64 DO214AC DO219AB DO35 DO41 W2 SOT23
    Text: Taping of Diodes 1 Vishay Semiconductors Taping of Diodes 1 AXIAL LEAD COMPONENTS Diodes and rectifiers with axial leads are normally delivered in taped form according to IEC 286-1 see figure 1 . The cathode side is designated by a colored tape. Taped devices


    Original     		09-Sep-08 marking code w2 sot23 MARKING W2 SOT23 SOD80 marking SOD64 DO214AC DO219AB DO35 DO41 W2 SOT23 PDF

    Taping of Diodes

    Abstract: taping
    Text: Taping of Diodes www.vishay.com Vishay Semiconductors Taping of Diodes AXIAL LEAD COMPONENTS Diodes and rectifiers with axial leads are normally delivered in taped form according to IEC 286-1 see figure 1 . The cathode side is designated by a colored tape. Taped


    Original     		OD-57 OD-64 DO-35 DO-41 27-Feb-14 Taping of Diodes taping PDF

    SOT23 MARK Y3

    Abstract: NPN Transistor PN100A PN100A
    Text: PN100 / MMBT100 / PN100A / MMBT100A PN100 PN100A MMBT100 MMBT100A C E C B TO-92 SOT-23 E B Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.


    Original     		PN100 MMBT100 PN100A MMBT100A PN100A OT-23 SOT23 MARK Y3 NPN Transistor PN100A PDF

    marking code w2 sot23

    Abstract: gs08 marking code w2 sot323 Do219AB DO214AC DO35 DO35 package
    Text: Vishay Semiconductors Taping of Diodes Axial Lead Components Diodes and rectifiers with axial leads are normally delivered in taped form according to IEC 286-1 see figure 1 . The cathode side is designated by a colored tape. Taped devices are normally delivered in ammo-


    Original     		08-Aug-06 marking code w2 sot23 gs08 marking code w2 sot323 Do219AB DO214AC DO35 DO35 package PDF

    2907 TRANSISTOR PNP

    Abstract: transistor PN2907
    Text: PN2907 MMBT2907 C E C TO-92 BE B SOT-23 Mark: 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*


    Original     		PN2907 MMBT2907 PN2907 OT-23 PN2907A O-92-3 2907 TRANSISTOR PNP transistor PN2907 PDF

    marking a42 sot-23

    Abstract: sot23 marking code a42 MPSA42 sot-223 EIA rs 481 SOT23 MARK Y3 mps a42 transistor mps a42 a42 sot-223 Marking code mps
    Text: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*


    Original     		MPSA42 MMBTA42 PZTA42 MPSA42 MMBTA42 OT-23 OT-223 MPSA42RA O-92-3 marking a42 sot-23 sot23 marking code a42 MPSA42 sot-223 EIA rs 481 SOT23 MARK Y3 mps a42 transistor mps a42 a42 sot-223 Marking code mps PDF

    SOT-23 MARK 2Q

    Abstract: BF254 sot-23 transistor p2 marking
    Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.


    Original     		2N5086 MMBT5086 2N5087 MMBT5087 2N5087 OT-23 2N5087BU SOT-23 MARK 2Q BF254 sot-23 transistor p2 marking PDF

    MPS A06 transistor

    Abstract: MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps
    Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		MPSA06 MMBTA06 PZTA06 MPSA06 MMBTA06 OT-23 OT-223 MPSA06RA O-92-3 MPS A06 transistor MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps PDF

    mps 0724

    Abstract: MPS A92 transistor k mps a92 transistor transistor BR A92 Marking code mps
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		MPSA92 MMBTA92 PZTA92 MPSA92 MMBTA92 OT-23 OT-223 MPSA92RA mps 0724 MPS A92 transistor k mps a92 transistor transistor BR A92 Marking code mps PDF

    2N5088 Cross Reference

    Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


    Original     		2N5088 MMBT5088 2N5089 MMBT5089 2N5089 OT-23 2N5088 Cross Reference 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild PDF

    marking code w2 sot323

    Abstract: marking code vishay label marking code w2 sot23 MARKING W2 SOT23 SOD80 marking DO214AC DO219AB DO35
    Text: Taping of Diodes 2 Vishay Semiconductors Taping of Diodes 2 AXIAL LEAD COMPONENTS Diodes and rectifiers with axial leads are normally delivered in taped form according to IEC 286-1 see figure 1 . The cathode side is designated by a colored tape. Taped devices


    Original     		09-Sep-08 marking code w2 sot323 marking code vishay label marking code w2 sot23 MARKING W2 SOT23 SOD80 marking DO214AC DO219AB DO35 PDF

    Untitled

    Abstract: No abstract text available
    Text: ML6206S ML6206S Series Low ESR Cap. Compatible Positive Voltage Regulator Application Features Battery Powered Equipment Palmtops Portable Cameras and Video Recorders Reference Voltage Sources CMOS Low Power Consumption : Typical 1.0uAat Vout=3.0V Output Voltage Range : 1.5V to 5.0V in 0.1V increments


    Original     		ML6206S ML6206S 250mA 100mAand 200mA 250mW) 500mW) 300mW) P14/14 PDF

    sot23 transistor marking ZF

    Abstract: No abstract text available
    Text: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings*


    Original     		2N4126 MMBT4126 2N4126 OT-23 2N4126TA 2N4126BU O-92-3 sot23 transistor marking ZF PDF

    mark 2L SOT-23

    Abstract: MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 2N5401BU 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 2N5401 OT-23 2N5401RA 2N5401BU 2N5401RM 2N5401TF mark 2L SOT-23 MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6 PDF

    SOT23 MARK Y3

    Abstract: sot-23 Marking N2 MMBT200 10bv MARK N2 SOT-23 PN200
    Text: PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.


    Original     		PN200 MMBT200 PN200A MMBT200A PN200A OT-23 PN200 SOT23 MARK Y3 sot-23 Marking N2 10bv MARK N2 SOT-23 PDF