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    MARKING D17 Search Results

    MARKING D17 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A09 N03 MOSFET

    Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
    Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04


    Original     		AD1580-A AD1580-B AD1582-A AD1582-B AD1582-C AD1583-A AD1583-B AD1583-C AD1584-A AD1584-B A09 N03 MOSFET marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23 PDF

    3300uf 350v

    Abstract: B096 E157 transistor D195 C115 D130 D155 E171 transistor d115 B115
    Text: Aluminum Electrolytic Capacitors MEK Features ‧Endurance with ripple current: 85℃, 5,000 hours ‧ RoHS Compliance Sleeve & Marking Color: Black & Golden SPECIFICATIONS Items Performance -40℃ ~ +85℃ Category Temperature Range at 120Hz, 20℃ ±20%


    Original     		120Hz, 120Hz) oB115 3300uf 350v B096 E157 transistor D195 C115 D130 D155 E171 transistor d115 B115 PDF

    5800c

    Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
    Text: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V


    Original     		TM5500/TM5800 TM5800-933 CoolRun80 5800C093310 TM5800-867 5800C086710 TM5800-800 5800A080010 TM5500-800 5800c bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800 PDF

    bios programmer

    Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
    Text: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP


    Original     		TM5800 TM5800-1000-ULP CoolRun80 5800T100021 TM5800-1000-VLP 5800N100021 TM5800-1000-LP 5800P100021 bios programmer sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM PDF

    block diagram of crusoe processor

    Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
    Text: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz


    Original     		TM55E/TM58E TM58EX-933 58EXAE093321 TM58EL-800 58ELAD080021 TM55EL-667 55ELAC066721 TM55E/TM58E block diagram of crusoe processor bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667 PDF

    BP2G1

    Abstract: GP2X1 BP2G sp marking GP2X WP4N BP4P wp4f1 BP4U D17I
    Text: PRODUCT CHANGE NOTICE PCN Form D4-E000-73 PCN #09-007 NOTIFICATION DATE: April 24, 2009 MODELS FAMILY AFFECTED: BP, GP, SP, WP (Power Splitters) D1, D2 (Directional Couplers) See Attached List for Specific Models EXTENT OF CHANGE: Device marking from ink to Laser


    Original     		D4-E000-73) PCN09-007 M87093 D3-E040 BP2G1 GP2X1 BP2G sp marking GP2X WP4N BP4P wp4f1 BP4U D17I PDF

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Zener Diodes 300mW Zener Voltage @ I ZT = 5 mA Marking Code Operating Temperature: -40 o C to 150oC Min. Max Max. Zener Resistance @ lZT = 5 mA f = 1KHz Max. Zener Impedance @ lZT = 1 mA f = 1KHz Typical Temp. Coeff. @ IZT = 5 mA Min. Rev. Voltage


    Original     		300mW 150oC AZ23C2V7 AZ23C3V0 AZ23C3V3 AZ23C3V6 AZ23C3V9 AZ23C4V3 DZ23C30 DZ23C33 PDF

    2SA812

    Abstract: 2SC1623
    Text: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD <R> PACKAGE DRAWING Unit: mm 0.4 +0.1 –0.05 2.8 ± 0.2 2 1 3 Marking 1. Emitter 2. Base 3. Collector 0 to 0.1 1.1 to 1.4 0.16 +0.1 –0.06 0.3 TYP. 2.9 ± 0.2 VCBO −60 V


    Original     		2SA812 2SC1623 2SA812 2SC1623 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.1 29.11.2010 2GB ECC DDR2 – SDRAM DIMM Features: • 240 Pin ECC UDIMM SEU02G72D4BH2MT-30R 2GB PC2-5300 in FBGA Technology RoHS compliant •    Options:     Data Rate / Latency DDR2 667 MT/s CL5 DDR2 533 MT/s CL4 Marking


    Original     		SEU02G72D4BH2MT-30R PC2-5300 2048MB PDF

    B 728

    Abstract: No abstract text available
    Text: DESCRIPTION BY APPD DATE B RELEASED PER ER18293 CTC 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SDPRF-206. REV CY 09/04/09 NOTES: UNLESS OTHERWISE SPECIFIED 2. MATERIAL SPECIFICATIONS: BAYONET SLEEVE, BODY, CONTACT, FERRULE: BRASS PER ASTM B16 INSULATOR: TEFLON PER ASTM D1710


    Original     		SDPRF-206. D1710 ASTM-B-194 000100MIN AMS-QQ-N-290 AMS-QQ-N-290 AMS-QQ-N290 KTH-5000 KTH-5007 SQ04/09 B 728 PDF

    Untitled

    Abstract: No abstract text available
    Text: DESCRIPTION BY APPD DATE C REVISED PER ECR-ER20178 CTC 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SDPRF-206. REV CY 11/17/09 NOTES: UNLESS OTHERWISE SPECIFIED 2. MATERIAL SPECIFICATIONS: BAYONET SLEEVE, BODY, CONTACT: BRASS PER ASTM B16 INSULATOR: TEFLON PER ASTM D1710


    Original     		SDPRF-206. D1710 ASTM-B-194 ASTM-B-135 000100MIN AMS-QQ-N-290 AMS-QQ-N-290 AMS-QQ-N290 KTH-500 2065-E00-C7103N PDF

    Untitled

    Abstract: No abstract text available
    Text: DESCRIPTION BY APPD DATE B REVISED PER ECR-ER21004 CTC 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SDPRF-206. REV CY 12/21/09 NOTES: UNLESS OTHERWISE SPECIFIED 2. MATERIAL SPECIFICATIONS: BAYONET SLEEVE, BODY, CONTACT, FERRULE: BRASS PER ASTM B16 INSULATOR: TEFLON PER ASTM D1710


    Original     		SDPRF-206. D1710 ASTM-B-194 000100MIN AMS-QQ-N-290 AMS-QQ-N-290 AMS-QQ-N290 KTH-5000 KTH-5016( 2065-E00-4CF02N PDF

    Untitled

    Abstract: No abstract text available
    Text: DESCRIPTION BY APPD DATE A RELEASED PER ER14706 CTC 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SDPRF-206. REV CY 04/15/09 NOTES: UNLESS OTHERWISE SPECIFIED 2. MATERIAL SPECIFICATIONS: BAYONET SLEEVE, BODY, CONTACT, FERRULE: BRASS PER ASTM B16 INSULATOR: TEFLON PER ASTM D1710


    Original     		SDPRF-206. D1710 ASTM-B-194 000100MIN AMS-QQ-N-290 AMS-QQ-N-290 AMS-QQ-N290 KTH-5000 KTH-5008 2065-E00-6CH02N PDF

    Untitled

    Abstract: No abstract text available
    Text: DESCRIPTION BY APPD DATE B REVISED PER ECR-ER22654 CTC 1. FOR GENERAL SERIES SPECIFICATIONS, SEE SDPRF-206. REV CY 03/17/10 NOTES: UNLESS OTHERWISE SPECIFIED 2. MATERIAL SPECIFICATIONS: BAYONET SLEEVE, BODY, CONTACT, FERRULE: BRASS PER ASTM B16 INSULATOR: TEFLON PER ASTM D1710


    Original     		SDPRF-206. D1710 ASTM-B-194 000100MIN AMS-QQ-N-290 AMS-QQ-N-290 QQ-S-365 AMS-QQ-N290 2065-E00-6CH02N 5M-1994 PDF

    D1733

    Abstract: 2SD1733F5 MARKING CODE f5 transistor BA 14 2SB1181 TA-10-03 2SD1733FS BA, TRANSISTOR
    Text: 2SD1733F5 Transistor, NPN Features • available in CPT F5 SC-63 package • package marking: D1733-AQ, where ★ is hFE code and Q is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage


    OCR Scan     		2SD1733F5 SC-63) D1733 2SB1181 2SD1733FS MARKING CODE f5 transistor BA 14 TA-10-03 2SD1733FS BA, TRANSISTOR PDF

    d1758

    Abstract: Transistor d1758 transistor F5 2SD1758F5 2SD1758 E 32 TRANSISTOR d1758 s d1758 transistor transistors d1758
    Text: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package package marking: D1758*t), where ★ is hFE code and □ is lot number general purpose transistor with ratings as follows: — 2SD1758F5 (CPT F5) o 5.1 1' • X


    OCR Scan     		2SD1758F5 SC-63) D1758 2SD1758F5 2SD1758 Transistor d1758 transistor F5 E 32 TRANSISTOR d1758 s d1758 transistor transistors d1758 PDF

    d1760

    Abstract: 821 transistor
    Text: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760^Q, where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A


    OCR Scan     		2SD1760F5 SC-63) D1760 2SB1184 2SD1760F5 821 transistor PDF

    D1758

    Abstract: Transistor d1758 2SD1758F5 d1758 transistor 2SD1758
    Text: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D1758^Q, where ★ is hFE code and □ is lot number • general purpose transistor with ratings as follows: — v c e o = 32 2SD1758F5 (CPT F5)


    OCR Scan     		2SD1758F5 SC-63) D1758 2SD1758F5 temperature00 2SD1758 Transistor d1758 d1758 transistor PDF

    TRANSISTOR d1760

    Abstract: 2SD1760F5
    Text: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760*Q , where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A


    OCR Scan     		2SD1760F5 SC-63) D1760 2SB1184 TRANSISTOR d1760 2SD1760F5 PDF

    D1733

    Abstract: transistors 2sd 2500 2SD1733F5 transistor 239
    Text: 2SD1733F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1733-*Q, where ★ is hFE code and □ is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage


    OCR Scan     		2SD1733F5 SC-63) D1733- 2SB1181 2SD1733F5 1733F5 D1733 transistors 2sd 2500 transistor 239 PDF

    V 904 RL 805

    Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures


    OCR Scan     		BFG520W BFG520W/X; BFG520W/XR OT343 OT343R BFG520W/X BFG520W/XR 7110fli V 904 RL 805 N4 TAM transistor fp 1016 DIN45004B PDF

    D1700

    Abstract: DS-323 DS323
    Text: 237 KWIK-CHANGE*DESIGNATION STRIPS DOUBLE HEIGHT Kwik-Change Designation Strip DS311 (double height) DOUBLE HEIGHT DESIGNATION STRIPS Part No. DS311 DS312 DS313 Description Kit (double height) Includes: 1-mounting strip (17“ long) 1-cover 1-marking strip sheet


    OCR Scan     		DS311 DS311 DS311) TT516 KitTT516) TT516) B1600, B1700 DS312 D1700 DS-323 DS323 PDF

    marking pk sot23

    Abstract: Diode BAV99 SOT23
    Text: Surface Mount Switching Diodes 350mW Switching Diodes/SOT23 Type Number Marking Code* Peak Reverse Voltage Maximum Reverse Current @ 25°C LL > vR v <§ U. Ir > PRV Maximum Forward Voltage Drop Capacitance r = V F = 0 Reverse Max. Power Pin Identity Recovery Dissipation See Figs.


    OCR Scan     		350mW Diodes/SOT23 BAS16 BAV70 BAV99 BAW56 BAL99 IMBD4148 IMBD4448 BAV100 marking pk sot23 Diode BAV99 SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Accessories - Bantam Horizontal Designation Strip Kits i Bantam horizontal designation strips mount above the jack rows to provide identification ofjack functions. They are available in a variety of widths to provide maximum marking space for each panel type. Each kit contains strips and all necessary


    OCR Scan     		PJ723 PJ727 PJ728 PJ724, PJ771 PJ850 PJ850W PJ850 PJ850W PJ859-6X PDF