Untitled
Abstract: No abstract text available
Text: SN74LVC1G29 2-OF-3 DECODER/DEMULTIPLEXER www.ti.com SCES569B – JUNE 2004 – REVISED JANUARY 2007 FEATURES • • • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V Max tpd of 5.1 ns at 3.3 V
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SN74LVC1G29
SCES569B
24-mA
000-V
A114-A)
A115-A)
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D9N MARKING CODE
Abstract: No abstract text available
Text: SN74LVC1G29 www.ti.com SCES569C – JUNE 2004 – REVISED JANUARY 2014 SN74LVC1G29 2-of-3 Decoder/Demultiplexer Check for Samples: SN74LVC1G29 FEATURES DESCRIPTION • This decoder is designed for 1.65-V to 5.5-V VCC operation. 1 2 • • • • • •
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SN74LVC1G29
SCES569C
SN74LVC1G29
24-mA
D9N MARKING CODE
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Untitled
Abstract: No abstract text available
Text: SN74LVC1G29 www.ti.com SCES569C – JUNE 2004 – REVISED JANUARY 2014 SN74LVC1G29 2-of-3 Decoder/Demultiplexer Check for Samples: SN74LVC1G29 FEATURES DESCRIPTION • This decoder is designed for 1.65-V to 5.5-V VCC operation. 1 2 • • • • • •
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SN74LVC1G29
SCES569C
SN74LVC1G29
24-mA
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MO-220-VNND-4
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE Prepared in accordance with ASME Y14.24 APPROVED Vendor item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGE 1 2 3 PMIC N/A PREPARED BY Phu H. Nguyen Original date of drawing YY MM DD CHECKED BY 13-01-11 Phu H. Nguyen
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16-BIT,
V62/12654
5962-V036-13
V62/12654-01XE
AD9122SCPZ-EP
MO-220-VNND-4
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D9N10
Abstract: STD9N10 STD9N10-1 STD9N10T4 DPak Package dimensions
Text: STD9N10 STD9N10-1 N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD9N10 100 V < 0.27 Ω 9A STD9N10-1 100 V < 0.27 Ω 9A FEATURES SUMMARY • TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY
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STD9N10
STD9N10-1
O-251)
O-252)
O-251
O-252
D9N10
STD9N10
STD9N10-1
STD9N10T4
DPak Package dimensions
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P9NM60
Abstract: No abstract text available
Text: STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh Power MOSFET TARGET DATA TYPE STP9NM60 STD9NM60 STD9NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω 8.3 A 8.3 A 8.3 A
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STP9NM60
STD9NM60
STD9NM60-1
O-220/DPAK/IPAK
O-220
P9NM60
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STP9N
Abstract: No abstract text available
Text: STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh Power MOSFET TARGET DATA TYPE STP9NM60 STD9NM60 STD9NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω 8.3 A 8.3 A 8.3 A
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STP9NM60
STD9NM60
STD9NM60-1
O-220/DPAK/IPAK
O-220
STP9N
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STD9NM60
Abstract: STD9NM60-1 STD9NM60T4 STP9NM60
Text: STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STP9NM60 STD9NM60 STD9NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω
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STP9NM60
STD9NM60
STD9NM60-1
O-220/DPAK/IPAK
STD9NM60
O-220
STD9NM60-1
STD9NM60T4
STP9NM60
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STD9NM60T4
Abstract: STD9NM60 STD9NM60-1 STP9NM60 D9NM60 STP9NM
Text: STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh Power MOSFET TARGET DATA TYPE STP9NM60 STD9NM60 STD9NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω 8.3 A 8.3 A 8.3 A
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STP9NM60
STD9NM60
STD9NM60-1
O-220/DPAK/IPAK
STD9NM60
O-220
STD9NM60T4
STD9NM60-1
STP9NM60
D9NM60
STP9NM
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D9N05
Abstract: D9N05CL
Text: NID9N05CL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • • • • Diode Clamp Between Gate and Source
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NID9N05CL
D9N05
D9N05CL
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STD9NM60N
Abstract: STF9NM60N STP9NM60N P9NM60N STD9NM60N-1 F9NM60N VDD30-0 VDD480 STF9NM60
Text: STD9NM60N - STD9NM60N-1 STP9NM60N - STF9NM60N N-CHANNEL 600V - 0.51Ω - 9A - TO220/TO-220FP/DPAK/IPAK SECOND GENERATION MDmesh MOSFET Target Specification Package General features VDSS Type @Tjmax RDS(on) ID 3 2 STD9NM60N STD9NM60N-1 STF9NM60N STP9NM60N
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STD9NM60N
STD9NM60N-1
STP9NM60N
STF9NM60N
O220/TO-220FP/DPAK/IPAK
STD9NM60N
STP9NM60N
O-220
STF9NM60N
P9NM60N
STD9NM60N-1
F9NM60N
VDD30-0
VDD480
STF9NM60
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D9N10
Abstract: STD9N10 STD9N10-1 STD9N10T4 T432 airbag
Text: STD9N10 STD9N10-1 N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD9N10 100 V < 0.27 Ω 9A STD9N10-1 100 V < 0.27 Ω 9A FEATURES SUMMARY • TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY
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STD9N10
STD9N10-1
O-251)
O-252)
O-251
D9N10
STD9N10
STD9N10-1
STD9N10T4
T432
airbag
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NORTHBRIDGE* reflow
Abstract: pin diagram AMD phenom II - X4 RX980 990FX RD990 ATI RADEON reflow profile RD980 amd RADEON igp 215-0716046 AMD Phenom II x4
Text: AMD 990FX/990X/970 Databook Technical Reference Manual Rev 3.00 P/N: 48691_990FX_ds_nda 2012 Advanced Micro Devices, Inc. Trademarks AMD, the AMD Arrow logo, AMD Phenom, AMD Cool'n'Quiet, and combinations thereof, ATI, the ATI logo, Radeon, and CrossFire are trademarks of Advanced
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990FX/990X/970
RD990
NORTHBRIDGE* reflow
pin diagram AMD phenom II - X4
RX980
990FX
ATI RADEON reflow profile
RD980
amd RADEON igp
215-0716046
AMD Phenom II x4
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STP9NM60N
Abstract: STF9NM60 F9NM60N STD9NM60N STX9
Text: STD9NM60N - STD9NM60N-1 STP9NM60N - STF9NM60N N-channel 600V - 0.47Ω - 9A - TO-220 /FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 STD9NM60N 650V <0.51Ω 9A STD9NM60N-1 650V <0.51Ω 9A STF9NM60N
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STD9NM60N
STD9NM60N-1
STP9NM60N
STF9NM60N
O-220
STF9NM60N
STP9NM60N
O-220
STF9NM60
F9NM60N
STX9
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STF9NM50N
Abstract: F9NM50N JESD97 STD9NM50N STD9NM50N-1 STP9NM50N
Text: STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STD9NM50N 550V <0.56Ω 7.5A STD9NM50N-1 550V <0.56Ω 7.5A 3 1
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STD9NM50N
STD9NM50N-1
STF9NM50N
STP9NM50N
O-220
O-220FP
STD9NM50N
O-220
F9NM50N
JESD97
STD9NM50N-1
STP9NM50N
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d9n05cl
Abstract: A 0412 MOSFET gate to drain clamp 369A-13 AN569 NID9N05CL NID9N05CLT4 mosfet transistor 400 volts.100 amperes D9N05
Text: NID9N05CL Power MOSFET 9 Amps, 52 Volts N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a DPAK Package http://onsemi.com Benefits 9 AMPERES 52 V CLAMPED RDS on = 90 mW (Typ.) • High Energy Capability for Inductive Loads • Low Switching Noise Generation
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NID9N05CL
NID9N05CL/D
d9n05cl
A 0412 MOSFET
gate to drain clamp
369A-13
AN569
NID9N05CL
NID9N05CLT4
mosfet transistor 400 volts.100 amperes
D9N05
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05CLG
Abstract: marking d9n AN569 D9N05CL NID9N05CL NID9N05CLG NID9N05CLT4 NID9N05CLT4G D9N05
Text: NID9N05CL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP ID MAX (Limited)
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NID9N05CL
NID9N05CL/D
05CLG
marking d9n
AN569
D9N05CL
NID9N05CL
NID9N05CLG
NID9N05CLT4
NID9N05CLT4G
D9N05
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d9n05cl
Abstract: AN569 NID9N05CL NID9N05CLT4
Text: NID9N05CL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • • • • Diode Clamp Between Gate and Source
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NID9N05CL
NID9N05CL/D
d9n05cl
AN569
NID9N05CL
NID9N05CLT4
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Untitled
Abstract: No abstract text available
Text: NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP
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NID9N05CL,
NID9N05ACL
NID9N05CL/D
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Abstract: No abstract text available
Text: NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP
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NID9N05CL,
NID9N05ACL
NID9N05CL/D
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Marking D9N
Abstract: NID9N05ACL A 673 C2 transistor NID9N05ACLT4G 05AC NID9N05CLG
Text: NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP
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NID9N05CL,
NID9N05ACL
NID9N05CL/D
Marking D9N
A 673 C2 transistor
NID9N05ACLT4G
05AC
NID9N05CLG
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Untitled
Abstract: No abstract text available
Text: Product Folder Sample & Buy Technical Documents Support & Community Tools & Software DAC3174 www.ti.com SLAS837A – APRIL 2013 – REVISED MAY 2013 Dual 14-bit 500 MSPS Digital to Analog Converter FEATURES APPLICATIONS • • • • • 1 2 • • •
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DAC3174
SLAS837A
14-bit
DAC3154/DAC3164
DAC3151/DAC3161/DAC3171
460mW
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Untitled
Abstract: No abstract text available
Text: Product Folder Sample & Buy Technical Documents Support & Community Tools & Software DAC3174 www.ti.com SLAS837A – APRIL 2013 – REVISED MAY 2013 Dual 14-bit 500 MSPS Digital to Analog Converter FEATURES APPLICATIONS • • • • • 1 2 • • •
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DAC3174
SLAS837A
14-bit
DAC3154/DAC3164
DAC3151/DAC3161/DAC3171
460mW
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Rohm part marking
Abstract: 05 marking code transistor ROHM marking D9 ROHM MARKING PACKAGE transistor marking D9 ROHM marking marking code transistor ROHM UMT6 INVERTER 50 kW DTA114Y
Text: UMD9N / IMD9A Transistors Digital Transistor Dual Digital Transistors for Inverter Drive UMD9N / IMD9A ! Features ! External dim ensions (Units : mm) 1) DTA114Y and DTC114Y transistors are built-in a SMT package. ! Absolute maximum ratings (Ta=25°C) Sym bol
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DTA114Y
DTC114Y
120mW
200mW
SC-88
SC-74
100mA
Rohm part marking
05 marking code transistor ROHM
marking D9
ROHM MARKING PACKAGE
transistor marking D9
ROHM marking
marking code transistor ROHM
UMT6
INVERTER 50 kW
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