BFS17S
Abstract: VPS05604 NPN marking MCs
Text: BFS17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
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BFS17S
VPS05604
EHA07196
OT363
Aug-20-2001
BFS17S
VPS05604
NPN marking MCs
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Untitled
Abstract: No abstract text available
Text: BFS17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
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BFS17S
VPS05604
EHA07196
OT363
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DIN 6784 c1
Abstract: BCR108S BFS17S E6327 VPS05604
Text: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
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BFS17S
VPS05604
EHA07196
OT363
DIN 6784 c1
BCR108S
BFS17S
E6327
VPS05604
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PDF
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VPS05604
Abstract: bfs 11
Text: BFS 17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363
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VPS05604
EHA07196
OT-363
Oct-25-1999
VPS05604
bfs 11
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-363
BC847S
OT-363
100mA
100MHz
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ic7001
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-363
BC847S
OT-363
ic7001
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marking s6 sot363
Abstract: No abstract text available
Text: CYStech Electronics Corp. SOT-363 Dimension Style: Pin 1. Emitter1 E1 Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6 *:Typical
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OT-363
026BSC
65BSC
UL94V-0
marking s6 sot363
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183S
Abstract: Q62702-C2377
Text: BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 10kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
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Q62702-C2377
OT-363
Nov-27-1996
183S
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6c2 transistor
Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor
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OT-363
Q62702-F1645
Dec-18-1996
6c2 transistor
transistor marking MCs
Q62702-F1645
transistor BFs 18
SOT 23 CODE MCS
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lr1551
Abstract: SOT363-6 003 SOT363 SOT363 6
Text: Leshan Radio Co ., Ltd 2.7Ω Ω Low Voltage SPDT Analog Switch in 6-pin SOT363 LR1551 Description Features Wide Power Supply Range: 1.8V to 5.5V The LR1551 is a Single Wide-Bandwidth, fast single- High Bandwidth: 300MHz pole double-throw SPDT CMOS switch featuring an
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OT363
LR1551
LR1551
300MHz
10MHz
300MHz
OT363-6)
OT363-6
650TYP
525REF
SOT363-6
003 SOT363
SOT363 6
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SOT363-6
Abstract: BL1551 SOT363 6 003 SOT363 marking CL SOT363 sot363-6 marking SOT-363-6
Text: BL1551—Single SPDT Analog Switch 2.7Ω Ω Low Voltage SPDT Analog Switch in 6-pin SOT363 Description Features Wide Power Supply Range: 1.8V to 5.5V The BL1551 is a Single Wide-Bandwidth, fast single- High Bandwidth: 300MHz pole double-throw SPDT CMOS switch featuring an
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BL1551--Single
OT363
BL1551
300MHz
10MHz
300MHz
OT363-6)
OT363-6
650TYP
SOT363-6
SOT363 6
003 SOT363
marking CL SOT363
sot363-6 marking
SOT-363-6
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Untitled
Abstract: No abstract text available
Text: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been
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UM5304EEXF
UM5304EEAF
UM5304EEBF
UM5304EECF
SC70-6/SC88/SOT363
SC89-6/SOT563/SOT666
TSOP-6/SOT23-6
UM5304EEXF
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Untitled
Abstract: No abstract text available
Text: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been
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UM5304EEXF
UM5304EEAF
UM5304EEBF
UM5304EECF
SC70-6/SC88/SOT363
SC89-6/SOT563/SOT666
TSOP-6/SOT23-6
UM5304EEXF
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transistor smd yw
Abstract: BAP70AM array marking 20 NXP
Text: BAP70AM Silicon PIN diode array Rev. 01 — 20 November 2006 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features • ■ ■ ■ High voltage current controlled RF resistor for RF attenuators
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BAP70AM
OT363
BAP70AM
transistor smd yw
array marking 20 NXP
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Untitled
Abstract: No abstract text available
Text: UM5204EEXF Quad Channel Low Capacitance ESD Protection Array UM5204EEAF UM5204EEBF UM5204EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5204EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been
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UM5204EEXF
UM5204EEAF
UM5204EEBF
UM5204EECF
SC70-6/SC88/SOT363
SC89-6/SOT563/SOT666
TSOP-6/SOT23-6
UM5204EEXF
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MARKING CODE M1 sot363
Abstract: IC SMD MARKING CODE M1
Text: BCM847BS NPN matched double transistor; ∆hFE = 10 % Rev. 01 — 14 September 2004 Product data sheet 1. Product profile 1.1 General description NPN matched double transistor in a SOT363 SC-88 SMD plastic package. Matched version of BC847BS. The transistors are fully isolated internally. PNP equivalent:
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BCM847BS
OT363
SC-88)
BC847BS.
BCM857BS.
MARKING CODE M1 sot363
IC SMD MARKING CODE M1
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smd transistor marking A9
Abstract: smd code A9 3 pin transistor TRANSISTOR SMD MARKING CODE a9 transistor marking A9 smd transistor marking nv
Text: BCM857BS PNP matched double transistor; ∆hFE = 10 % Rev. 01 — 14 September 2004 Product data sheet 1. Product profile 1.1 General description PNP matched double transistor in SOT363 SC-88 SMD plastic package. Matched version of BC857BS. The transistors are fully isolated internally. NPN equivalent:
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BCM857BS
OT363
SC-88)
BC857BS.
BCM847BS.
smd transistor marking A9
smd code A9 3 pin transistor
TRANSISTOR SMD MARKING CODE a9
transistor marking A9
smd transistor marking nv
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sot363 marking DATE code
Abstract: data sheet for all smd components marking 20 sot363 smd schottky diode sot363 marking code C5 SMD diode sot363 marking code cd dual sot363 marking E1 sot363 SMD Packages smd transistor sot363
Text: BAT54XY Schottky barrier quadruple diode in very small SOT363 package Rev. 01 — 17 January 2005 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a SOT363 very
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BAT54XY
OT363
OT363
sot363 marking DATE code
data sheet for all smd components
marking 20 sot363
smd schottky diode sot363
marking code C5 SMD diode
sot363 marking code cd
dual sot363
marking E1 sot363
SMD Packages
smd transistor sot363
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT54XY Schottky barrier quadruple diode in very small SOT363 package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a SOT363 very
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BAT54XY
OT363
OT363
BAT54XY
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nxp marking code SOT363
Abstract: BAT54XY
Text: BAT54XY Schottky barrier quadruple diode in very small SOT363 package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a SOT363 very
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BAT54XY
OT363
OT363
BAT54XY
nxp marking code SOT363
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HSMS-285x model
Abstract: HSMS-285X marking code e6 sot363 AN1124 HSMS-2850 SOT143 Marking A1 PIN DIODE MARKING CODE AB SOT Packaged A1 4 PIN sot-23 Marking B1 HSMS-286* reliability
Text: Products > RF ICs/Discretes > Schottky Diodes > Demonstration Circuit Boards > DEMO-HSMS285-0 DEMO-HSMS285-0 Demonstration circuit board for HSMS-2850, HSMS-2852 and HSMS-2855 Description Lifecycle status: Active Features 2.45 GHz TAG circuit using the HSMS-2850 zero bias Schottky diode
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DEMO-HSMS285-0
HSMS-2850,
HSMS-2852
HSMS-2855
HSMS-2850
OT-23
OT-143
HSMS-285x model
HSMS-285X
marking code e6 sot363
AN1124
SOT143 Marking A1
PIN DIODE MARKING CODE AB
SOT Packaged A1 4 PIN
sot-23 Marking B1
HSMS-286* reliability
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Untitled
Abstract: No abstract text available
Text: BAP70AM Silicon PIN diode array Rev. 3 — 27 January 2014 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits High voltage current controlled RF resistor for RF attenuators
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BAP70AM
OT363
AEC-Q101
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Q62702-C2377
Abstract: vk sot-363 marking 7S Marking wms sot marking code vk, sot-363
Text: SIEMENS BCR 183S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, 4 driver circuit 5 6 • Built in resistor R1 = 10kii, R2 = 10k£2 » ^ 3 2 1 Marking Ordering Code Pin Configuration BCR183S WMs CM II CO Q62702-C2377 1=E1 2=B1
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OCR Scan
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10kii,
VPS05604
BCR183S
OT-363
Q62702-C2377
300ns;
vk sot-363
marking 7S
Marking wms sot
marking code vk, sot-363
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit ►Built in resistor Ri = 10kii, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
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OCR Scan
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BCR183S
10kii,
Q62702-C2377
OT-363
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PDF
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