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    MARKING E10 DIODE Search Results

    MARKING E10 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING E10 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd diode a7

    Abstract: marking E10 DIODE DIODE smd marking A4 smd diode A4 DIODE smd marking A1 jedec sot-23 6 lead SMD MARKING CODE A4 SOT 23 A7 diode SMD 6 PIN A4 marking code marking a7 sot-23
    Text: BAW56, BAV70, BAV99 225mW SMD Switching Diode Small Signal Diode SOT-23 A Features F B E —Fast switching speed —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant


    Original     		BAW56, BAV70, BAV99 225mW OT-23 OT-23 MIL-STD-202, C/10s 008gram smd diode a7 marking E10 DIODE DIODE smd marking A4 smd diode A4 DIODE smd marking A1 jedec sot-23 6 lead SMD MARKING CODE A4 SOT 23 A7 diode SMD 6 PIN A4 marking code marking a7 sot-23 PDF

    smd diode code A4

    Abstract: smd code A7 smd diode a7 smd diode marking A7 SOT-23 DIODE smd marking A4 a4 sot-23 smd diode A4 smd sot23 A4 A7 SMD sot23 marking E10 DIODE
    Text: BAW56, BAV70, BAV99 225mW SMD Switching Diode Small Signal Diode SOT-23 A Features F B E —Fast switching speed —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant


    Original     		BAW56, BAV70, BAV99 225mW OT-23 OT-23 MIL-STD-202, smd diode code A4 smd code A7 smd diode a7 smd diode marking A7 SOT-23 DIODE smd marking A4 a4 sot-23 smd diode A4 smd sot23 A4 A7 SMD sot23 marking E10 DIODE PDF

    marking E10 DIODE

    Abstract: SOD-323F S3 marking DIODE smd diode code s3 smd diode code b1 1N4148WS 1N4448WS 1N914BWS smd diode S2 marking code s1 SMD diode
    Text: 1N4148WS/1N4448WS/1N914BWS 200mW High Speed SMD Switching Diode Small Signal Diode SOD-323F B Features C A —Fast switching device Trr<4.0nS —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin(Sn) lead finish with Nickel(Ni) underplate


    Original     		1N4148WS/1N4448WS/1N914BWS 200mW OD-323F OD-323F MIL-STD-202, marking E10 DIODE SOD-323F S3 marking DIODE smd diode code s3 smd diode code b1 1N4148WS 1N4448WS 1N914BWS smd diode S2 marking code s1 SMD diode PDF

    Untitled

    Abstract: No abstract text available
    Text: SPA547-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 10.5 kV / 1.5A Designer’s Data Sheet FEATURES: • •


    Original     		SPA547-01 100kHz 160-1512-XX-05 PDF

    marking E10 DIODE

    Abstract: DIODE MARKING 9X SPA547-01 helicoil unf marking E11 DIODE diode marking e8
    Text: SPA547-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com HYPERFAST HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 10.5 kV / 1.5A Designer’s Data Sheet FEATURES:


    Original     		SPA547-01 100kHz 160-1512-XX-05 PM0021D marking E10 DIODE DIODE MARKING 9X SPA547-01 helicoil unf marking E11 DIODE diode marking e8 PDF

    Untitled

    Abstract: No abstract text available
    Text: RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode SOT-23 3 A 1 2 F B Features E C ­Epitaxial planar die construction G D ­Surface device type mounting H ­Mositure sensitivity level 1 ­Matte tin Sn lead finishe with Nickel (Ni) underplate ­Pb-free version and RoHS compliant


    Original     		RB495D 350mA, OT-23 PDF

    SOT23 D3Q

    Abstract: marking E10 DIODE marking code B0 SMD diode smd part marking b1 sot DIODE SMD CODE MARKING 35 SOT D3Q smd schottky diode
    Text: RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode SOT-23 3 A 1 2 F B Features E C —Epitaxial planar die construction G D —Surface device type mounting H —Mositure sensitivity level 1 —Matte tin Sn lead finishe with Nickel (Ni) underplate —Pb-free version and RoHS compliant


    Original     		RB495D 350mA, OT-23 SOT23 D3Q marking E10 DIODE marking code B0 SMD diode smd part marking b1 sot DIODE SMD CODE MARKING 35 SOT D3Q smd schottky diode PDF

    E13 diode

    Abstract: SPA548-01
    Text: SPA548-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 5.5 kV / 2A Designer’s Data Sheet FEATURES: • • •


    Original     		SPA548-01 100kHz 160-1512-XX-05 E13 diode SPA548-01 PDF

    marking E13 diode

    Abstract: marking E10 DIODE SPA548-01 E5 marking
    Text: SPA548-01 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 5.5 kV / 2A Designer’s Data Sheet FEATURES: • • •


    Original     		SPA548-01 100kHz 160-1512-XX-05 PM0022B marking E13 diode marking E10 DIODE SPA548-01 E5 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-12401 Revision . 2 Product Standards Switching Diode DA6X106U0R DA6X106U0R Silicon epitaxial planar type Unit: mm 2.9 For high speed switching circuits 0.5 • Features 6 5 4 1 2 3 1.5 2.8  Short reverse recovery time trr  Low terminal capacitance Ct


    Original     		TT4-EA-12401 DA6X106U0R UL-94 DA3X102D DA3X103E PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-12528 Revision. 3 Product Standards Switching Diode DA4X106U0R DA4X106U0R Silicon epitaxial planar type Unit: mm 2.9 0.95 (0.95) For small current rectification 4 • Features 3 1.5 2.8  Short reverse recovery time trr  Low terminal capacitance Ct


    Original     		TT4-EA-12528 DA4X106U0R UL-94 DA3X102D DA3X103E PDF

    TSM2323

    Abstract: TSM2323CX TSM2323CXRF TSM232
    Text: TSM2323 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 39 @ VGS = -4.5V -4.7 52 @ VGS = -2.5V -4.1 68 @ VGS = -1.8V -2.0 Block Diagram ● Advance Trench Process Technology ●


    Original     		TSM2323 OT-23 TSM2323CX OT-23 TSM2323 TSM2323CXRF TSM232 PDF

    D2502

    Abstract: ECSP1006-2 ESGD100
    Text: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view


    Original     		ENN7320A ESGD100 ESGD100] ECSP1006-2 D2502 ECSP1006-2 ESGD100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view


    Original     		ENN7320A ESGD100 ESGD100] ECSP1006-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-11567 Revision. 4 Product Standards Zener Diode DZ2J3900L DZ2J3900L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz


    Original     		TT4-EA-11567 DZ2J390ï UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-11540 Revision. 3 Product Standards Zener Diode DZ2J0330L DZ2J0330L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz


    Original     		TT4-EA-11540 DZ2J033ï UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-11562 Revision. 4 Product Standards Zener Diode DZ2J2400L DZ2J2400L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz


    Original     		TT4-EA-11562 DZ2J240ï UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-11557 Revision. 3 Product Standards Zener Diode DZ2J1500L DZ2J1500L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz


    Original     		TT4-EA-11557 DZ2J150ï UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-11792 Revision. 3 Product Standards Zener Diode DZ2S0750L DZ2S0750L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J075 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz


    Original     		TT4-EA-11792 DZ2S075ï DZ2J075 UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13615 Revision. 4 Product Standards Zener Diode DZ2S1000L DZ2S1000L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J100 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz


    Original     		TT4-EA-13615 DZ2S100ï DZ2J100 UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original     		CAS100H12AM1 CAS100H12AM1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-11840 Revision. 3 Product Standards Zener Diode DZ2S3600L DZ2S3600L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J360 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz


    Original     		TT4-EA-11840 DZ2S360ï DZ2J360 UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-11794 Revision. 3 Product Standards Zener Diode DZ2S0910L DZ2S0910L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J091 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz


    Original     		TT4-EA-11794 DZ2S091ï DZ2J091 UL-94 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS269 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS269 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS + 0.5 2.5 “ 0.3 FEATURES : • Small Package. • Small Total Capacitance : CT = 1.2pF Max. • Low Series Resistance : rs = 0.6D (Typ.) 1.5- a i 5


    OCR Scan     		1SS269 PDF