Untitled
Abstract: No abstract text available
Text: High-accuracy detection voltage Low current consumption BD48XXG BD49XXG CMOS RESET IC 5 4 BD48XXG/FVE series BD49XXG/FVE series 1 2 1pin : RESET output 2pin : Supply voltage 3pin : GND 4pin : N.C. 5pin : N.C. 3 UNIT:mm 0.2MIN BD48XXG/FVE, BD49XXG/FVE are series of high-accuracy
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BD48XXG
BD49XXG
BD48XXG/FVE
BD49XXG/FVE
BD48XXG/FVE,
BD49XXG/
25MAX
0D4831G/FVE
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BD4843G
Abstract: CMOS 4039 BD4840 BD4843 bd4842g BD4840G BD4831 BD4852G UM10332 BD48XXFVE
Text: High-accuracy detection voltage Low current consumption BD48XXG BD49XXG CMOS RESET IC 5 4 BD48XXG/FVE series BD49XXG/FVE series 1 2 1pin : RESET output 2pin : Supply voltage 3pin : GND 4pin : N.C. 5pin : N.C. 3 UNIT:mm 0.2MIN BD48XXG/FVE, BD49XXG/FVE are series of high-accuracy
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BD48XXG
BD49XXG
BD48XXG/FVE
BD49XXG/FVE
BD48XXG/FVE,
BD49XXG/
25MAX
044831G/FVE
BD4843G
CMOS 4039
BD4840
BD4843
bd4842g
BD4840G
BD4831
BD4852G
UM10332
BD48XXFVE
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Untitled
Abstract: No abstract text available
Text: Zener Diodes MAZ3000 Series MA3000 Series Silicon planar type Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.25 − 0.05 0.65 ± 0.15 3 Average forward current IF(AV) Instanious forward current IFRM Total power dissipation*1 Ptot Non-repetitive reverse surge
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MAZ3000
MA3000
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Untitled
Abstract: No abstract text available
Text: 2SK1609 Switching Diodes MA1U152WA Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur
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2SK1609
MA1U152WA
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Untitled
Abstract: No abstract text available
Text: 2SK1608 Switching Diodes MA1U152K Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 0.95 2 0.7–0 +0.1 ● di p Pl lan nclu ea e se pla m d m des
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2SK1608
MA1U152K
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Untitled
Abstract: No abstract text available
Text: 2SK1607 Switching Diodes MA1U152A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 0.95 2 0.7–0 +0.1 ● di p Pl lan nclu ea e se pla m d m des
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2SK1607
MA1U152A
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M4D MARKING
Abstract: No abstract text available
Text: 2SK1605 Switching Diodes MA200WK Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 VRM Single Forward current DC Single Peak forward current Double Single Non-repetitive peak forward surge current Double Tj Storage temperature
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2SK1605
MA200WK
M4D MARKING
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Untitled
Abstract: No abstract text available
Text: 2SK1267 Switching Diodes MA164 Silicon epitaxial planer type 2.8 –0.3 +0.25 M Di ain sc te on na tin nc ue e/ d 2 +0.1 0.16 –0.06 0.8 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo
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2SK1267
MA164
MA153
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Untitled
Abstract: No abstract text available
Text: 2SK1609 Switching Diodes MA1U152WK Silicon epitaxial planer type Unit : mm For switching circuits • Features 2.8±0.2 +0.25 0.65±0.15 0.65±0.15 ● Small capacity between pins, Ct ● Cathode common connection type +0.1 2 +0.1 Short reverse recovery period trr
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2SK1609
MA1U152WK
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Untitled
Abstract: No abstract text available
Text: 2SK1035 Switching Diodes MA1U157A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct ● Series connection type 0.7–0 ■ Absolute Maximum Ratings Ta= 25˚C
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2SK1035
MA1U157A
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m4l marking
Abstract: No abstract text available
Text: 2SK1267 Switching Diodes MA200A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 of a soft recovery type M Di ain sc te on na tin nc ue e/ d ● trr reverse current IR, with extremely small leakage current
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2SK1267
MA200A
m4l marking
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MA200K
Abstract: No abstract text available
Text: 2SK1406 Switching Diodes MA200K Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 1.45 1 3 +0.1 0.4 –0.05 +0.2 0.65±0.15 0.95 2.9 –0.05 1.9±0.2 of a soft recovery type M Di ain sc te on na tin nc ue e/ d ● trr reverse current IR, with extremely small leakage current
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2SK1406
MA200K
MA200K
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MAZW068H
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZWxxxH Series Silicon planar type For surge absorption circuit • Features M Di ain sc te on na tin nc ue e/ d ■ Package • Two elements anode-common type • SSSMini type 3-pin package
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2002/95/EC)
MAZW068H
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD17 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 VRM Non-repetitive peak forwardsurge-current * IFSM Average forward current IF(AV) Junction temperature Tj Storage temperature
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MA3XD17
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IEC1000-4-2
Abstract: MAZW068H MAZW082H
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZWxxxH Series Silicon planar type M Di ain sc te on na tin nc ue e/ d For surge absorption circuit • Features ■ Package • Two elements anode-common type • SSSMini type 3-pin package
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2002/95/EC)
IEC1000-4-2
MAZW068H
MAZW082H
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2SC3663
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES PACKAGE DIMENSIONS in mm • Low-voltage, low-current, low-noise and high-gain @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP.
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2SC3663
2SC3663
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pt1017
Abstract: mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490
Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253
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El00-KIT-ND
J200-KIT-ND
1600-KIT-ND
1601-KIT-ND
1602-KIT-ND
1603-KIT-ND
1604-KIT-ND
923000-I-ND
10514-ND
10522-ND
pt1017
mt 1389 vde
converter siemens modules GR 60 48V 120 A
SMD Code 12W SOT-23
600w 12V 230V Inverter schematic
mw 137 600g
PT1000 NTC TEMPERATURE CHART
smd 4pk
EPL1902S2C
67127490
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAS3795E Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 Reverse voltage (DC)
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2002/95/EC)
MAS3795E
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MAS3795E
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MAS3795E Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 Unit Reverse voltage (DC)
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2002/95/EC)
MAS3795E
MAS3795E
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . ESD Diodes MAZW000H Series Silicon planar type Unit: mm 0.33+0.05 –0.02 For surge absorption circuit 0.10+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • Two elements anode-common type
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2002/95/EC)
MAZW000H
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3 pin mini mold transistor
Abstract: K 460 marking r2 UNRL110 UNRL111 UNRL113 UNRL114 UNRL115
Text: Transistors with built-in Resistor UNRL110/111/113/114/115 Silicon PNP epitaxial planer type Unit: mm For digital circuit 0.020±0.010 2 0.80±0.05 3 • Features 0.60±0.05 0.20±0.03 4 ■ Resistance by Part Number R1 47 kΩ 10 kΩ 47 kΩ 10 kΩ 10 kΩ
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UNRL110/111/113/114/115
UNRL110
UNRL111
UNRL113
UNRL114
UNRL115
3 pin mini mold transistor
K 460
marking r2
UNRL110
UNRL111
UNRL113
UNRL114
UNRL115
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3 pin mini mold transistor
Abstract: UNRL210 UNRL211 UNRL213 UNRL214 UNRL215 UNRL216
Text: Transistors with built-in Resistor UNRL210/211/213/214/215/216 Silicon NPN epitaxial planer type Unit: mm For digital circuit 0.020±0.010 2 0.80±0.05 3 • Features 0.60±0.05 0.20±0.03 4 ■ Resistance by Part Number R1 47 kΩ 10 kΩ 47 kΩ 10 kΩ
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UNRL210/211/213/214/215/216
3 pin mini mold transistor
UNRL210
UNRL211
UNRL213
UNRL214
UNRL215
UNRL216
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v6340r
Abstract: SA marking SOT23 V6340RSP3B 33164 V6340 TO-92 marking EA SOT23 V6340 SA marking V6340RTO3E marking E1
Text: R EM MICROELECTRONIC - MARIN SA V6340 Ultra Low Cost 3-Pin Microprocessor Reset Description Applications The V6340 monitors the supply voltage of any electronic system, and generates the appropriate Reset signal. The threshold must be chosen to the minimum allowed voltage
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V6340
V6340
OT-23
v6340r
SA marking SOT23
V6340RSP3B
33164
V6340 TO-92
marking EA SOT23
SA marking
V6340RTO3E
marking E1
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3 pin capacitor
Abstract: B41538-A7338-M S14 K 75 CAPACITOR B41538-A7228-M MARKING 11 3PIN
Text: Aluminum Electrolytic Capacitors 3-pin capacitor Long-life grade For switch-mode power supplies with high clock frequencies Very low self-inductance Very high current handling capability despite small size; high reliability 35 î 2V Marking ol negative pole
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B41538-A7228-M
B41538-A7338-M
B41538-A8228-M
B41538-A8338-M
3 pin capacitor
S14 K 75 CAPACITOR
MARKING 11 3PIN
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