On semiconductor date Code
Abstract: on semiconductor marking code sot s4 marking code siemens On semiconductor date Code sot-143 E6327 ON Semiconductor marking marking code ga sot 363 SOT89 marking GA marking CODE GA sot363 sot143 TOP marking 16
Text: Package Information Disrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW6, MW4 EH S 46 Manufacturer Date code Year / Month Type code Example EH S 46 Siemens 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363 Manufacturer WH S
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Original
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OT-23,
OT-143,
OT-323,
OT-343,
OT-363
OD-123,
OD-323
OT-223,
CSOG5813
OT-143
On semiconductor date Code
on semiconductor marking code sot
s4 marking code siemens
On semiconductor date Code sot-143
E6327
ON Semiconductor marking
marking code ga sot 363
SOT89 marking GA
marking CODE GA sot363
sot143 TOP marking 16
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PDF
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On semiconductor date Code
Abstract: SOT 363 marking CODE 68 sot 23-5 marking code SOT89 MARKING CODE 43 on semiconductor marking code sot STS 75 SOT23 marking CODE GA sot363 SOT89 marking GA mp sot 23 marking code ga sot 363
Text: Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW-6, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year / Month Type code Example EH S 46 Siemens 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363
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Original
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OT-23,
OT-143,
SCT-595,
SCT-598
OT-323,
OT-343,
OT-363
OD-123,
OD-323,
SCD-80
On semiconductor date Code
SOT 363 marking CODE 68
sot 23-5 marking code
SOT89 MARKING CODE 43
on semiconductor marking code sot
STS 75 SOT23
marking CODE GA sot363
SOT89 marking GA
mp sot 23
marking code ga sot 363
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PDF
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On semiconductor date Code sot-223
Abstract: marking code ga SOT89 marking GA marking code ga sot 363 MARKING GA SOT-363 diode GG 79 Marking BA SOT89 on semiconductor marking code sot SOT89 MARKING CODE marking CODE GA sot363
Text: Package Information Discrete and RF Semiconductors Packages Marking Layout SC-74, SOT-23, SOT-143, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year/Month Type code EH S 46 Example 1994, June BCW 66 H Marking Layout SC-75, SOT-323, SOT-343, SOT-363, TSFP-3, TSFP-4
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Original
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SC-74,
OT-23,
OT-143,
SCT-595,
SCT-598
SC-75,
OT-323,
OT-343,
OT-363,
OD-323,
On semiconductor date Code sot-223
marking code ga
SOT89 marking GA
marking code ga sot 363
MARKING GA SOT-363
diode GG 79
Marking BA SOT89
on semiconductor marking code sot
SOT89 MARKING CODE
marking CODE GA sot363
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PDF
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ic 556
Abstract: transistor SMD bcw66h BCW66F BCW66G BCW66H for ic 556 marking cd 556 SMD TRANSISTOR MARKING bw
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS
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Original
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OT-23
BCW66F,
BCW66G
BCW66H
C-120
ic 556
transistor SMD bcw66h
BCW66F
BCW66G
BCW66H
for ic 556
marking cd 556
SMD TRANSISTOR MARKING bw
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PDF
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BCW66
Abstract: BCW66F BCW68
Text: BCW66 SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking BCW66F EF BCW 66G EG BCW 66H EH SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENT IS BCW68
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Original
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BCW66
BCW66F
BCW68
OT-23
BCW66
BCW66F
BCW68
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS
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Original
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OT-23
BCW66F,
BCW66G
BCW66H
C-120
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PDF
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Untitled
Abstract: No abstract text available
Text: BCW65 BCW66 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW 65A EA BCW 65B EB BCW 65C EC BCW66F EF BCW 66G EG BCW 66H EH 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION
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Original
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BCW65
BCW66
BCW66F
BCW67
BCW68
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated BCW66H 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 45V Case: SOT23 IC = 800mA High Continuous Collector Current Case Material: molded plastic, “Green” molding compound
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Original
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BCW66H
800mA
300mV
100mA
BCW68H
J-STD-020
AEC-Q101
DS33003
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS70LT1G Series S-LBAS70LT1G Series Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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Original
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LBAS70LT1G
S-LBAS70LT1G
AEC-Q101
BAS70
LBAS70LT1G
S-LBAS70LT1G
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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Original
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AEC-Q101
LBAS70LT1G
S-LBAS70LT1G
BAS70
LBAS70LT1G
S-LBAS70LT1G
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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Original
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AEC-Q101
LBAS70LT1G
S-LBAS70LT1G
BAS70
LBAS70LT1G
S-LBAS70LT1G
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage LBAS70LT1G Series Guard ring protected Low diode capacitance. 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION
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Original
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LBAS70LT1G
BAS70
LBAS70LT3G
LBAS70-04LT1G
LBAS70-04ltage
LBAS70LT1G
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage LBAS70XLT1G Guard ring protected Low diode capacitance. 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for
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Original
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LBAS70XLT1G
BAS70
LBAS70LT1G
LBAS70LT3G
LBAS70-04LT1G
LBAS70-04LT3G
OT-23
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PDF
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MARKING 93 SOT89
Abstract: DIN iec 286-3 part 1 smd marking code eg On semiconductor date Code on semiconductor marking code sot SMD MARKING CODE 93 smd marking SOT343 smd sot-89 marking code SOT89 bc smd marking code BA RF
Text: S IE M E N S Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW6.MW4 Manufacturer EH co Date code Year / Month Type code Example Siemens EH CD 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363 Manufacturer
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OCR Scan
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OT-23,
OT-143,
OT-323,
OT-343,
OT-363
OD-123,
OD-323
OT-223,
MARKING 93 SOT89
DIN iec 286-3 part 1
smd marking code eg
On semiconductor date Code
on semiconductor marking code sot
SMD MARKING CODE 93
smd marking SOT343
smd sot-89 marking code
SOT89 bc
smd marking code BA RF
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Low Leakage Diode Array BAV 199 • Low-leakage applications • Medium speed switching times • Connected in series Type Marking Ordering Code tape and reel BA V 199 JY s Q62702-A921 Pin Configuration Package1) 3 ¿ -EH I SOT-23 EH ° DM07005
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OCR Scan
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Q62702-A921
OT-23
DM07005
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode Array SMBD 7000 • For high-speed switching applications • Connected in series Type Marking Ordering Code tape and reel SMBD 7000 s5C Q68000-A8440 Pin Configuration Package1) 3 SOT-23 EH ° EHA070DS Maximum Ratings Parameter
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OCR Scan
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Q68000-A8440
OT-23
fl535b05
53SLDS
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode BAL 74 • For high-speed switching Type Marking Ordering Code tape and reel BAL74 JCs Q62702-A718 Pin Configuration Package1) SOT-23 o- H3- o 3 2 EH M 0001 Maximum Ratings Parameter Symbol Values Unit V
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OCR Scan
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BAL74
Q62702-A718
OT-23
M0001
fl235L05
fl5BSb05
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PDF
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Marking a1s
Abstract: 330 marking diode 7.a sot-23
Text: SIEM EN S Silicon Switching Diode Array BAW 56 • For high-speed switching applications • Common anode Type Marking Ordering Code tape and reel BAW 56 A1s Q62702-A688 Pin Configuration Package1) 3 » M SOT-23 1M » EH A07006 Maximum Ratings per Diode
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OCR Scan
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Q62702-A688
OT-23
A07006
EH80009I
BAW56
Marking a1s
330 marking diode
7.a sot-23
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PDF
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marking a4s
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode Array BAV 70 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel BAV 70 A4s Q68000-A6622 Pin Configuration Package1) 3 ° fri I SOT-23 K l -S EH A0700« Maximum Ratings per Diode Parameter
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OCR Scan
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Q68000-A6622
OT-23
A0700«
BAV70
marking a4s
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PDF
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marking A7s
Abstract: siemens em 350 99 DIODE marking 351
Text: SIEMENS Silicon Switching Diode Array BAV 99 Features • For high-speed switching • Connected in series Type Marking Ordering Code tape and reel BAV 99 A7s Q68000-A549 Pin Configuration Package1) SOT-23 3 ¿— EH I IX ° P U 07005 Maximum Ratings per Diode
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OCR Scan
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Q68000-A549
OT-23
BAV99
M0076
marking A7s
siemens em 350 99
DIODE marking 351
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PDF
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silicon Switching Diode Array B A V 74 • For high-speed switching • Common cathode Typ e Marking Ordering Code tape and reel B A V 74 JAs Q62702-A693 Pin Configuration Package1* 3 SOT-23 EH-I- K l ° EHA07004 Maximum Ratings per Diode Parameter
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OCR Scan
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Q62702-A693
OT-23
EHA07004
23SbD5
BAV74
EH80007!
fl235LQ5
Q120404
235LI3S
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PDF
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kra102s equivalent
Abstract: KRA104S kra102s KRA101S-KRA106S 106S KRA101S KRA103S KRA105S KRA106S transistor mark PH
Text: K R A IO ISKRA106S SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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OCR Scan
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KRA101S-
KRA106S
KRA101S
KRA102S
KRA103S
KRA104S
KRA105S
KRA106S
KRA105S
kra102s equivalent
KRA101S-KRA106S
106S
transistor mark PH
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PDF
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KRA107S
Abstract: KRA108S KRA109S transistor mark PH
Text: KRA107SKRA109S SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process
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OCR Scan
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KRA107S-KRA109S
KRA107S
KRA108S
KRA109S
OT-23
transistor mark PH
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PDF
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Q62702-A4
Abstract: diode code 6_8 marking 7S sot 23 x 316 diode code ae
Text: SIEM EN S Silicon Schottky Diodes BAT 68 • For mixer applications in the VHF/UHF range • For high-speed switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Marking Ordering Code Pin Configuration Type Package1 tape and reel)
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OCR Scan
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Q62702-A926
OT-23
Q62702-A4
Q62702-A15
EHA07005
EHA07004
Q62702-A19
CHA07006
diode code 6_8
marking 7S
sot 23 x 316
diode code ae
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PDF
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