Untitled
Abstract: No abstract text available
Text: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFR949T
VPS05996
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BFR94
Abstract: No abstract text available
Text: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFR949T
VPS05996
BFR94
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BFR949T
Abstract: SC75 GMA marking
Text: BFR949T NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFR949T
VPS05996
Oct-24-2001
BFR949T
SC75
GMA marking
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Untitled
Abstract: No abstract text available
Text: BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R
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BFP181R
OT143R
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BFP181R
Abstract: No abstract text available
Text: BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R
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BFP181R
OT143R
BFP181R
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BFP181R
Abstract: No abstract text available
Text: BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R
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BFP181R
OT143R
Jun-21-2001
BFP181R
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Untitled
Abstract: No abstract text available
Text: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B
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BCR162.
BCR162/F/L3
BCR162T
EHA07183
BCR162
BCR162F
BCR162L3
dissipationBCR162,
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Untitled
Abstract: No abstract text available
Text: BFP 181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 181R
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OT-143R
Oct-12-1999
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GMA marking
Abstract: IC 2272
Text: BFP 182R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 182R
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OT-143R
900MHz
Oct-12-1999
GMA marking
IC 2272
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SPICE 2G6
Abstract: No abstract text available
Text: BFP183R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs
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BFP183R
OT143R
SPICE 2G6
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transistor marking code wts
Abstract: transistor marking code wts 15
Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs
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BCR166.
BCR166/F/L3
BCR166T/W
EHA07183
BCR166
BCR166F
BCR166L3
BCR166T
BCR166W
OT323
transistor marking code wts
transistor marking code wts 15
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G1026
Abstract: No abstract text available
Text: BFR193W NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFR193W
VSO05561
OT323
G1026
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Untitled
Abstract: No abstract text available
Text: BFR193W NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFR193W
VSO05561
OT323
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BFR193W
Abstract: VSO05561
Text: BFR193W NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFR193W
VSO05561
OT323
900MHz
Aug-09-2001
BFR193W
VSO05561
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BFP182R
Abstract: TRANSISTOR BI 187
Text: BFP182R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs
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BFP182R
OT143R
900MHz
Aug-09-2001
BFP182R
TRANSISTOR BI 187
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BFP183R
Abstract: transistor marking RHs
Text: BFP183R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs
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BFP183R
OT143R
900MHz
Aug-09-2001
BFP183R
transistor marking RHs
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DIN 6784
Abstract: BCR162F SOT23 WU BCR108T BCR162 BCR162L3 BCR162T E6327 SC75
Text: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B
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BCR162.
BCR162/F/L3
BCR162T
EHA07183
BCR162
BCR162F
BCR162L3
Aug-29-2003
DIN 6784
BCR162F
SOT23 WU
BCR108T
BCR162
BCR162L3
BCR162T
E6327
SC75
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Untitled
Abstract: No abstract text available
Text: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B
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BCR162.
BCR162/F/L3
BCR162T
EHA07183
BCR162
BCR162F
BCR162L3
Aug-29-2003
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Untitled
Abstract: No abstract text available
Text: BFP182R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs
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BFP182R
OT143R
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Untitled
Abstract: No abstract text available
Text: BFP182R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs
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BFP182R
OT143R
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Transistor BFR 38
Abstract: No abstract text available
Text: BFR 193 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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VPS05161
OT-23
Oct-25-1999
Transistor BFR 38
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1.0037
Abstract: BFP193 VPS05178
Text: BFP193 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers 4 fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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BFP193
VPS05178
OT143
temper00MHz
Aug-09-2001
1.0037
BFP193
VPS05178
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smd diode 319
Abstract: No abstract text available
Text: BSP 319 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated •^GS .h = 1-2 - 2 0 V Type Vbs b f f DS(on) Package Marking BSP 319 50 V 3.8 A 0.07 £i SOT-223 BSP 319 Type BSP 319 Ordering Code Q67000-S273
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OCR Scan
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OT-223
Q67000-S273
E6327
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
smd diode 319
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TRANSISTOR SMD MARKING CODE kd
Abstract: No abstract text available
Text: BSP 123 Infineon t echnologi es SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •W = a8 -2 0V Type Vbs b f lDS on) Package Marking 0.38 A 6n SOT-223 BSP 123 BSP 123 100 V Type Ordering Code Tape and Reel Information
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OCR Scan
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PDF
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OT-223
Q67000-S306
E6327
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
TRANSISTOR SMD MARKING CODE kd
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