Untitled
Abstract: No abstract text available
Text: DMC364A2 Tentative Total pages page DMC364A2 Silicon NPN epitaxial planar type Tr1 Silicon NPN epitaxial planar type (Tr2) For digital circuit Marking Symbol : G3 Package Code : SSSMini6-F2-B Internal Connection 6 Absolute Maximum Ratings Ta = 25 °C Parameter
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DMC364A2
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sony lcd tv circuit diagram free
Abstract: 2412 nec marking G3 nec projector lamp LCX021AM pcg-6
Text: LCX021AM 4.1cm 1.6-inch LCD Panel (with microlens) For the availability of this product, please contact the sales office. Description The LCX021AM is a 4.1cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving
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LCX021AM
LCX021AM
PIN40
sony lcd tv circuit diagram free
2412 nec
marking G3
nec projector lamp
pcg-6
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2N5401
Abstract: No abstract text available
Text: 2N5401 PNP GENERAL PURPOSE TRANSISTOR POWER SEMICONDUCTOR Features • • • • High Collector-Emitter Breakdown Voltage Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Designed for General Purpose Amplifier and
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2N5401
MIL-STD-202,
-10mA,
-50mA,
100MHz
DS11205
2N5401
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2N5551-NPN
Abstract: No abstract text available
Text: 2N5551 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier E A C
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2N5551
2N5401
MIL-STD-202,
100MHz
DS11105
2N5551-NPN
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Untitled
Abstract: No abstract text available
Text: 2N5551 NPN SMALL SIGNAL TRANSISTOR Features • · · · · High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier E A C Mechanical Data · · ·
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2N5551
2N5401
MIL-STD-202,
100MHz
250mA,
DA11105
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PDF
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2N5401
Abstract: of pnp transistor 2n5401
Text: 2N5401 PNP GENERAL PURPOSE TRANSISTOR Features • · · · High Collector-Emitter Breakdown Voltage Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Designed for General Purpose Amplifier and Switch Applications E
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2N5401
MIL-STD-202,
-10mA,
-50mA,
100MHz
DS11205
2N5401
of pnp transistor 2n5401
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transistor 2N5401
Abstract: 2N5401 marking xa 2N5401 vishay DS11205
Text: 2N5401 PNP GENERAL PURPOSE TRANSISTOR Features High Collector-Emitter Breakdown Voltage Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Designed for General Purpose Amplifier and Switch Applications hH TO-92 Mechanical Data
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OCR Scan
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2N5401
MIL-STD-202,
2N5401
-10mA,
-50mA,
100MHz
transistor 2N5401
marking xa
2N5401 vishay
DS11205
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PDF
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MARKING G3 Transistor
Abstract: Transistor TO-92 2N5551 2N5401 2N5551
Text: 2N5551 NPN SMALL SIGNAL TRANSISTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier KM TO-92 Mechanical Data_ Case: TO-92, Plastic
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OCR Scan
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2N5551
2N5401
MIL-STD-202,
2N5551
100MHz
250nA,
10Hzto
300ns,
DS11105
MARKING G3 Transistor
Transistor TO-92 2N5551
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PN2907A
Abstract: No abstract text available
Text: PN2907A PNP SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available
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PN2907A
PN2222A)
MIL-STD-202,
-50mA,
100MHz
DS11201
PN2907A
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2PN2907A
Abstract: PN2907A
Text: PN2907A PNP SMALL SIGNAL TRANSISTOR Features • · · · · Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available PN2222A
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PN2907A
PN2222A)
MIL-STD-202,
-50mA,
100MHz
300ms,
DS11201
2PN2907A
PN2907A
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DFN1310H4-6
Abstract: DMN2005DLP4K
Text: DMN2005DLP4K DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max.
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DMN2005DLP4K
DFN1310H4-6
J-STD-020
DS30801
DFN1310H4-6
DMN2005DLP4K
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CR25
Abstract: LCX020BK MAC16
Text: LCX020BK 1.8cm 0.7-inch Color LCD Panel For the availability of this product, please contact the sales office. Description The LCX020BK is a 1.8cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving
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LCX020BK
LCX020BK
CR25
MAC16
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572H
Abstract: CR25 LCX020BK MAC16 624h SONY lcd cross reference V90-25
Text: LCX020BK 1.8cm 0.7-inch Color LCD Panel Description The LCX020BK is a 1.8cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. This panel provides full-color representation.
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LCX020BK
LCX020BK
572H
CR25
MAC16
624h
SONY lcd cross reference
V90-25
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DMN2005DLP4K-7
Abstract: No abstract text available
Text: DMN2005DLP4K DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max.
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DMN2005DLP4K
DFN1310H4-6
DFN1310H4-6
J-STD-020
MIL-STD-202,
DS30801
621-DMN2005DLP4K-7
DMN2005DLP4K-7
DMN2005DLP4K-7
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Emitter common Dual Digital Transistors FMG3A • Features Unit: mm ● Dual NPN digital transistor 4 5 1 (3) (2) 2 3 (1) R1=4.7kΩ R1 DTr2 R1 DTr1 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage
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100MHz
50m100m
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SC74A
Abstract: transistor w10 SC-74A npn transistor w6 SC-88A marking W8 transistor transistor w10 18 FMG12 marking W10 DTC144EK
Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL COUPLED NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,
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UMW10N
FMW10
FMG12
SC-74A
SC-88A
SC-74A
SC-88A,
SC74A
transistor w10
npn transistor w6
marking W8 transistor
transistor w10 18
marking W10
DTC144EK
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Untitled
Abstract: No abstract text available
Text: BC847CDLP 45V DUAL NPN SMALL SIGNAL TRANSISTOR Features Mechanical Data • BVCEO > 45V Case: X2-DFN1310-6 Low profile 0.4mm high package for thin applications Nominal package height: 0.4mm Ultra-Small Surface Mount Package Case Material: Molded Plastic, “Green” Molding Compound.
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BC847CDLP
X2-DFN1310-6
J-STD-020
AEC-Q101
MIL-STD-202,
DS30817
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E4 marking
Abstract: No abstract text available
Text: DMC2004LPK Green COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage VGS th < 1V • • Low Input Capacitance • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020C
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DMC2004LPK
AEC-Q101
X1-DFN1612-6
J-STD-020C
DS30854
E4 marking
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SC107B
Abstract: marking G3 G3 sot-353
Text: EMG3 / UMG3N / FMG3A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCEO IC(MAX.) R1 Tr1 and Tr2 EMT5 UMT5 (3) (5) 50V 100mA 4.7kW (2) (1) (4) (1) (4) (2) (3) (5) EMG3 (SC-107BB) SMT5 UMG3N SOT-353 (SC-88A)
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100mA
SC-107BB)
OT-353
SC-88A)
DTC143T
R1120A
SC107B
marking G3
G3 sot-353
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Untitled
Abstract: No abstract text available
Text: EMG3 / UMG3N / FMG3A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCEO IC(MAX.) R1 Tr1 and Tr2 EMT5 UMT5 (3) (5) 50V 100mA 4.7kW (2) (1) (4) (1) (4) (2) (3) (5) EMG3 (SC-107BB) SMT5 UMG3N SOT-353 (SC-88A)
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100mA
100mA
SC-107BB)
OT-353
SC-88A)
DTC143T
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: EMG3 / UMG3N / FMG3A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 VCEO 50V 100mA 4.7kW IC(MAX.) R1 EMT5 UMT5 (3) (5) (1) (4) (2) (5) EMG3 (SC-107BB) with complete isolation to allow negative biasing
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100mA
100mA
SC-107BB)
OT-353
SC-88A)
DTC143T
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes UMG3N SOT-353 General purpose transistors dual transistors FEATURES z Two DTC143T chips in a package z Mounting possible with SOT-353 automatic mounting machines. z Transistor elements are independent, eliminating interference.
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OT-353
OT-353
DTC143T
100MHz
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MARKING CODE G3
Abstract: AF MARKING CODE marking AF marking AF SOT marking G3
Text: MMBTBC337-40 NPN Silicon Epitaxial Planar Transistor for switching, AF driver and amplifier application, especially suited for automatic insertion in thick and thin-film circuits. Marking Code: “G3” SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC
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MMBTBC337-40
OT-23
500mA,
300mA
50MHz
MARKING CODE G3
AF MARKING CODE
marking AF
marking AF SOT
marking G3
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Transistor MPSA13
Abstract: mpsa14
Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features • · · High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data · · · · C Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,
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MPSA13
MPSA14
MIL-STD-202,
100mA,
100mA
100MHz
300ms,
DS11111
Transistor MPSA13
mpsa14
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