Untitled
Abstract: No abstract text available
Text: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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I27302
GB50XF60K
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PDF
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GB50XF120K
Abstract: No abstract text available
Text: Bulletin PD - 94567 rev.A 05/03 GB50XF120K IGBT SIK PACK MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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Original
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GB50XF120K
E78996
GB50XF120K
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PDF
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GB50XF120K
Abstract: No abstract text available
Text: Bulletin PD - 94567 rev.B 08/03 GB50XF120K IGBT SIXPACK MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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Original
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GB50XF120K
E78996
GB50XF120K
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PDF
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ECONO2-6PACK IGBT module
Abstract: IR E78996 GB50XF120K IGBT 6PACK MODULE IRF E78996 E78996 IR GB50XF120K ECONO-2
Text: PD - 94567 GB50XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient
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Original
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GB50XF120K
ECONO2-6PACK IGBT module
IR E78996
GB50XF120K IGBT 6PACK MODULE
IRF E78996
E78996 IR
GB50XF120K
ECONO-2
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft
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Original
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I27302
GB50XF60K
80merchantability,
12-Mar-07
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PDF
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95089
Abstract: ECONO2-6PACK IGBT module GB50XF60K
Text: GB50XF60K Vishay High Power Products IGBT Sixpack Module, 48 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse
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Original
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GB50XF60K
18-Jul-08
95089
ECONO2-6PACK IGBT module
GB50XF60K
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27283 11/06 GB50XF120K IGBT SIXPACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 50A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft
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Original
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I27283
GB50XF120K
E78996
12-Mar-07
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PDF
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95089
Abstract: GB50XF120K IGBT 6PACK MODULE GB50XF120K
Text: GB50XF120K Vishay High Power Products IGBT Sixpack Module, 50 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse
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Original
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GB50XF120K
18-Jul-08
95089
GB50XF120K IGBT 6PACK MODULE
GB50XF120K
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PDF
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NV17
Abstract: 942 rectifier diode
Text: GB50XF120K Vishay High Power Products IGBT Sixpack Module, 50 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse
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Original
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GB50XF120K
12-Mar-07
NV17
942 rectifier diode
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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Original
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I27309
GB50RF60K
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft
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Original
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I27309
GB50RF60K
12-Mar-07
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PDF
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OF IGBT
Abstract: GB50RF60K
Text: GB50RF60K Vishay High Power Products IGBT PIM Module, 48 A FEATURES • • • • • • • • • • • ECONO2 PIM PRODUCT SUMMARY Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft
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Original
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GB50RF60K
18-Jul-08
OF IGBT
GB50RF60K
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PDF
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d5621A/B
Abstract: M12088A M23088A/B D5011a/b M23088C/DEG M12057A M23088A m15088a d5611 d5011A/B datasheet
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing operator interface components, such as pilot lights, push buttons, selector switches, control stations, based LED bulbs, LED display, LED signal tower, motor siren, buzzer and cabinet
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ISO9001
MS104C
MS301
MS302
MS305
MS306
MS308
MS308-2A
AB102
MS402
d5621A/B
M12088A
M23088A/B
D5011a/b
M23088C/DEG
M12057A
M23088A
m15088a
d5611
d5011A/B datasheet
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PDF
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ovenaire
Abstract: ovenaire OSC multiturn trimmer capacitor ovenaire 10 mhz marking gb5 Oak Frequency Control TCXO mc 37 TCXO mc ovenaire oak frequency control 10 mhz
Text: OAK/MC COY ELEK-, OVENAIRE 5bE » • b72ö510 ÜDDGS7S 12T Hi O K li DIMENSIONS IN MILLIMETERS ±.76 38.10SQUARE Hl FREQUENCY ADJUSTMENT AOCESS REMOVE SEAL SCREW afín OVENAIRE • AUDIO • CARPENTER C H A R L O T T f S V i m . V IH C W U U S A E FREQ. 10.OOOMH2
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OCR Scan
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b720510
MODELOSC88-2-Ã
000mh2
88-2-X
ovenaire
ovenaire OSC
multiturn trimmer capacitor
ovenaire 10 mhz
marking gb5
Oak Frequency Control
TCXO mc 37
TCXO mc
ovenaire oak frequency control 10 mhz
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PDF
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Untitled
Abstract: No abstract text available
Text: PD 9.871 A International S»1 Rectifier IRF7101 H EXFET Pow er M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N-Channel M OSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1H
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OCR Scan
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IRF7101
GGEbH72
5545E
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PDF
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Untitled
Abstract: No abstract text available
Text: TC7PG04FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PG04FU Dual Inverter Features • High-level output current: IOH/IOL = ±8 mA min at VCC = 3 V • High-speed operation: tpd = 2.8 ns (typ.) at VCC = 3.3 V, 15 pF • Operating voltage range: VCC = 0.9 to 3.6 V
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TC7PG04FU
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MARKING CODE GA7
Abstract: MARKINGCODEGA7
Text: MMBZ4617-G to MMBZ4627-G www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar low noise Zener diodes 3 • 350 mW high quality voltage regulator designed for low leakage, low current and low noise applications • ± 5 % tolerance on VZ
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MMBZ4617-G
MMBZ4627-G
AEC-Q101
AEC-Q101:
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
MARKING CODE GA7
MARKINGCODEGA7
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PDF
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Untitled
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division ANALOG R C 6704 Triple Fixed G ain V id e o A m plifier with Separate Enable Inputs Features Applications • Triple video amplifier w ith internal resistors to set gains to +2, +1, and -1 • Independently enabled amplifiers
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OCR Scan
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150C1)
16-pin
RC6704
RC6704
RC6704M
7ST73bD
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PDF
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GP5NC60KD
Abstract: STGB5NC60KD STGB5NC60KDT4 STGF5NC60KD STGP5NC60KD
Text: STGP5NC60KD - STGF5NC60KD STGB5NC60KD N-CHANNEL 5A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGB5NC60KD STGF5NC60KD STGP5NC60KD • ■ ■ ■ ■ VCES VCE sat (Max)
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STGP5NC60KD
STGF5NC60KD
STGB5NC60KD
O-220/TO-220FP/D2PAK
STGP5NC60KD
O-220
O-220FP
GP5NC60KD
STGB5NC60KD
STGB5NC60KDT4
STGF5NC60KD
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PDF
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samsung lcd tv circuits diagrams
Abstract: LTM150XH-T01 BA5 marking samsung lcd tv power supply diagrams diagram samsung LCD TV circuits diagram samsung LCD TV power circuits samsung "lcd tv" pixel circuits diagram 02VS 2SK1059 2SK1399
Text: Approval TO : DATE : SAMSUNG SAMSUNGTFT-LCD TFT-LCD MODEL MODEL NO. NO. : LTM150XH-T01 LTM150XH-T01 APPROVED BY : Any Modification of Spec is not allowed without SEC’s permission. Approved by : PREPARED BY : AMLCD Technical Customer Service Team SAMSUNG ELECTRONICS CO., LTD.
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LTM150XH-T01
samsung lcd tv circuits diagrams
LTM150XH-T01
BA5 marking
samsung lcd tv power supply diagrams
diagram samsung LCD TV circuits
diagram samsung LCD TV power circuits
samsung "lcd tv" pixel circuits diagram
02VS
2SK1059
2SK1399
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PDF
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STGB5NC60KDT4
Abstract: STGF5NC60KD STGP5NC60KD GP5NC60KD STGB5NC60KD
Text: STGP5NC60KD - STGF5NC60KD STGB5NC60KD N-CHANNEL 5A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGB5NC60KD STGF5NC60KD STGP5NC60KD • ■ ■ ■ ■ ■ VCES VCE sat (Max)
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STGP5NC60KD
STGF5NC60KD
STGB5NC60KD
O-220/TO-220FP/D2PAK
STGP5NC60KD
STGB5NC60KDT4
STGF5NC60KD
GP5NC60KD
STGB5NC60KD
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PDF
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TC7PG04FU
Abstract: No abstract text available
Text: TC7PG04FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PG04FU Dual Inverter Features • High output current • Super high speed operation : tpd = 2.8 ns typ. at VCC = 3.3 V, 15 pF • Operating voltage range • 5.5-V tolerant inputs •
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Original
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TC7PG04FU
TC7PG04FU
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PDF
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Untitled
Abstract: No abstract text available
Text: TC7PG04FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PG04FU Dual Inverter Features • High output current • Super high speed operation : tpd = 2.8 ns typ. at VCC = 3.3 V, 15 pF • Operating voltage range • 5.5-V tolerant inputs •
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Original
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TC7PG04FU
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PDF
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GP5NC60KD
Abstract: STGB5NC60KD STGB5NC60KDT4 STGF5NC60KD STGP5NC60KD uc pfc
Text: STGP5NC60KD - STGF5NC60KD STGB5NC60KD N-CHANNEL 5A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGB5NC60KD STGF5NC60KD STGP5NC60KD • ■ ■ ■ ■ ■ VCES VCE sat (Max)
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STGP5NC60KD
STGF5NC60KD
STGB5NC60KD
O-220/TO-220FP/D2PAK
STGP5NC60KD
O-220
O-220FP
GP5NC60KD
STGB5NC60KD
STGB5NC60KDT4
STGF5NC60KD
uc pfc
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PDF
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