A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04
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AD1580-A
AD1580-B
AD1582-A
AD1582-B
AD1582-C
AD1583-A
AD1583-B
AD1583-C
AD1584-A
AD1584-B
A09 N03 MOSFET
marking B3A sot23-5
t7G SOT23-6
marking H2A sot-23
ADM2004
marking moy sot-23
A06 N03 MOSFET
SOT23-5 D2Q
M05 SOT-23
M2A MARKING SOT-23
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Untitled
Abstract: No abstract text available
Text: TS50P05G thru TS50P07G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1 A - High surge current capability - ESD capability PASS AEC-Q101 level H3B
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TS50P05G
TS50P07G
AEC-Q101
IEC6100-4-2
E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1312012
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Rectifiers - Standard Rectifiers with ESD Capability I INNOVAT AND TEC O L OGY SE20AFJ and SE30AFJ N HN Diodes O 19 62-2012 600 V SE20AFJ and SE30AFJ Standard Rectifiers with ESD Capability in Low-Profile SlimSMA Package
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SE20AFJ
SE30AFJ
SE30AFJ
AEC-Q101
17-Aug-12
SE30AFB
SE30AFD
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JESD 201 class 1A
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes SE20AFJ and SE30AFJ 600 V SE20AFJ and SE30AFJ Standard Rectifiers with ESD Capability in Low-Profile SlimSMA Package KEY BENEFITS • • • • • • • • High current density ESD capability
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SE20AFJ
SE30AFJ
SE30AFJ
AEC-Q101
SE20AFJ
17-Aug-12
SE30AFB
JESD 201 class 1A
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Untitled
Abstract: No abstract text available
Text: TPD4E001-Q1 www.ti.com SLLSEG0C – MARCH 2013 – REVISED JUNE 2013 4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE Check for Samples: TPD4E001-Q1 FEATURES 1 • • • • • • • • APPLICATIONS Qualified for Automotive Applications AEC-Q100 Qualified With the Following
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TPD4E001-Q1
AEC-Q100
IEC61000-4-2
15-kV
10-nA
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TLE4941plusC
Abstract: TLE4941P PG-SSO-2-53 41CPA gaussmeter probe tle4941plus TLE4941C Tesla MARKING 41CPA
Text: Advanced Diff. Speed Sensor TLE4941plusC Data Sheet Revision 1.1 Edition February 2011 Published by Infineon Technologies AG 81726 München, Germany 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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TLE4941plusC
PG-SSO-2-53
TLE4941plusC
TLE4941P
PG-SSO-2-53
41CPA
gaussmeter probe
tle4941plus
TLE4941C
Tesla
MARKING 41CPA
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TLE4941C
Abstract: No abstract text available
Text: Advanced Diff. Speed Sensor TLE4941plusC Data Sheet Revision 1.1 Edition February 2011 Published by Infineon Technologies AG 81726 München, Germany 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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TLE4941plusC
PG-SSO-2-53
TLE4941C
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Untitled
Abstract: No abstract text available
Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TPD6F002-Q1 SLLSEK0A – DECEMBER 2014 – REVISED FEBRUARY 2015 TPD6F002-Q1 Automotive ESD Protection and EMI Filter for LCD Displays and FPD-Link 1 Features 3 Description
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TPD6F002-Q1
TPD6F002-Q1
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Untitled
Abstract: No abstract text available
Text: TPD4E001-Q1 www.ti.com SLLSEG0B – MARCH 2013 – REVISED MAY 2013 4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE Check for Samples: TPD4E001-Q1 FEATURES 1 • • • • • • • • APPLICATIONS Qualified for Automotive Applications AEC-Q100 Qualified With the Following
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TPD4E001-Q1
AEC-Q100
IEC61000-4-2
15-kV
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Untitled
Abstract: No abstract text available
Text: TPD4E001-Q1 www.ti.com SLLSEG0A – MARCH 2013 – REVISED MARCH 2013 4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE Check for Samples: TPD4E001-Q1 FEATURES 1 • • 2 • • • • • • APPLICATIONS Qualified for Automotive Applications AEC-Q100 Qualified With the Following
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TPD4E001-Q1
AEC-Q100
IEC61000-4-2
15-kV
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Untitled
Abstract: No abstract text available
Text: TPD4E001-Q1 www.ti.com SLLSEG0A – MARCH 2013 – REVISED MARCH 2013 4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE Check for Samples: TPD4E001-Q1 FEATURES 1 • • 2 • • • • • • APPLICATIONS Qualified for Automotive Applications AEC-Q100 Qualified With the Following
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TPD4E001-Q1
AEC-Q100
IEC61000-4-2
15-kV
8/20-us
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Untitled
Abstract: No abstract text available
Text: TPD4E001-Q1 www.ti.com SLLSEG0B – MARCH 2013 – REVISED MAY 2013 4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE Check for Samples: TPD4E001-Q1 FEATURES 1 • • • • • • • • APPLICATIONS Qualified for Automotive Applications AEC-Q100 Qualified With the Following
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TPD4E001-Q1
AEC-Q100
IEC61000-4-2
15-kV
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Untitled
Abstract: No abstract text available
Text: TPD4E001-Q1 www.ti.com SLLSEG0A – MARCH 2013 – REVISED MARCH 2013 4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE Check for Samples: TPD4E001-Q1 FEATURES 1 • • 2 • • • • • • APPLICATIONS Qualified for Automotive Applications AEC-Q100 Qualified With the Following
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TPD4E001-Q1
AEC-Q100
IEC61000-4-2
15-kV
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Untitled
Abstract: No abstract text available
Text: TS50P05G - TS50P07G CREAT BY ART Single Phase 50.0 AMPS. Glass Passivated Bridge Rectifiers TS-6P Features UL Recognized File # E-326243 Glass passivated junction Ideal for printed circuit board Plastic material has Underwriters Laboratory Flammability Classification 94V-0
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TS50P05G
TS50P07G
E-326243
AEC-Q101
IEC6100-4-2
MIL-STD-202,
TS50P0xG
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TRANSISTOR SMD MARKING CODE 1BW
Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-0710
TRANSISTOR SMD MARKING CODE 1BW
SmD TRANSISTOR 1bw
transistor SMD 5BW
TRANSISTOR SMD MARKING CODE 1AM
5bw smd
smd code marking 5bw
KL SN 102 94v-0
smd transistor marking 3bw
smd transistor 1AM
yx 801
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XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-1102
XD 105 94V-0
BFM 41A
Zener diode smd marking code 39c
transistor 1BW
GENERAL SEMICONDUCTOR TVS
CJ 53B 30 097
transistor 110 3CG
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4T245Q
Abstract: No abstract text available
Text: SN74AVC4T245-Q1 www.ti.com SCES792A – NOVEMBER 2009 – REVISED OCTOBER 2012 4-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS Check for Samples: SN74AVC4T245-Q1 • • • • RGY PACKAGE TOP VIEW VCCB • 1
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SN74AVC4T245-Q1
SCES792A
AEC-Q100
A114-A)
4T245Q
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 108 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kQ, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package 2=E 3=C SOT-23
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Q62702-C2253
OT-23
0120b7fl
235b05
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BZX 48c 6v8
Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P
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2004C
2004S
2004D
Z5250B
T3904
Z5251B
Z5252B
Z5253B
Z5254B
Z5255B
BZX 48c 6v8
PT2369
code Cj5
CMXZ11VTO
7006S
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BLF177
Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244
Text: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control
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BLF177
OT121
MBA379
philips ET-E 60
4312 020 36642
2222 030 capacitor philips
MARKING H3B
WCA244
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Surface Mount Silicon Zener Diodes Plastic SOD'123 Package Three complete series of Zener Diodes are offered in the convenient, surface mount plastic SOD-123 package. These devices provide a convenient alternative to the leadless
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OD-123
inch/3000
0X110
OD-123)
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motorola M1MA151W
Abstract: No abstract text available
Text: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59
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M1MA151WKT1/D
M1MA151WKT1
M1MA152WKT1
SC-59
M1MA151/2WKT1
inch/3000
M1MA151/2WKT3to
inch/10
motorola M1MA151W
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Gfg 51a
Abstract: GFM 16A GFG 48A GFM 85A gfx 51a
Text: MOTOROLA SC D IO D E S / O P T O b3b?SSS 55E J> DGÔ1333 2 MOTOROLA Order this data sheet by 1SMC5.0/D T - l) * 2 3 SEMICONDUCTOR TECHNICAL DATA 1SMC5.0, A Zener Overvoltage Transient Su ppressors thru 1SMC170, A . designed specifically for transient voltage suppression. The wide leads assure a large
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1SMC170,
Gfg 51a
GFM 16A
GFG 48A
GFM 85A
gfx 51a
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B3045
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBR3045ST/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR3045ST SW ITCH MODE Pow er R ectifier Motorola Preferred Device . . using the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features:
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MBR3045ST/D
MBR3045ST
B3045
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