rubber foot test spec
Abstract: PHS-016-4025-BLK
Text: REVISIONS @SPC DCP # TECH NOLOGY 1199 DOC. NO. SPC-F004 REV DESCRIPTION B Marking removed, spec revised C Renamed -w a s P H S -0 * * -* * * * -B L K DRAWN * Effective: 7 /8 /0 2 * DCP No: 1398 DATE CHECKD DATE JAP 2 /1 9 /9 2 JC 2 /1 9 /9 2 APPRVD JC 2 /1 9 /9 2
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SPC-F004
rubber foot test spec
PHS-016-4025-BLK
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Untitled
Abstract: No abstract text available
Text: KSM10N50CF/KSMF10N50CF 500V N-Channel MOSFET Features TO-220F TO-220 • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode
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KSM10N50CF/KSMF10N50CF
O-220F
O-220
54TYP
00x45Â
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Untitled
Abstract: No abstract text available
Text: FDPF12N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 11.5 A, 700 m Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF12N50FT
FDPF12N50FT
100nsec
200nsec
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Untitled
Abstract: No abstract text available
Text: FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m Features Description • RDS on = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS
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FDP12N50NZ
FDPF12N50NZ
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marking dt1
Abstract: No abstract text available
Text: FDP51N25 / FDPF51N25 N-Channel UniFETTM MOSFET 500 V, 51 A, 60 m Features Description • RDS on = 60 m (Max.) @ VGS = 10 V, ID = 25.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDP51N25/
FDPF51N25
FDP51N25
FDPF51N25
marking dt1
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FDPF12N50T
Abstract: mosfet driver 400v
Text: FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 m Features Description • RDS on = 550 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDP12N50
FDPF12N50T
FDPF12N50T
mosfet driver 400v
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Untitled
Abstract: No abstract text available
Text: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS
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FDP8N50NZ
FDPF8N50NZ
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Untitled
Abstract: No abstract text available
Text: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.3 A, 75 m Features Description • RDS(on) = 61 m ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching
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FDD850N10LD
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Untitled
Abstract: No abstract text available
Text: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 m Features Description • RDS(on) = 124 m ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching
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FDD1600N10ALZD
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fdp12n50nz
Abstract: fdpf12n50nz
Text: FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m Features Description • RDS on = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and
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FDP12N50NZ
FDPF12N50NZ
FDPF12N50NZ
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FDPF20N50FT
Abstract: No abstract text available
Text: FDP20N50F / FDPF20N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 20 A, 260 m Features Description • RDS on = 210 m (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDP20N50F/
FDPF20N50FT
FDP20N50F
FDPF20N50FT
100nsec
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FQPF10N50CF
Abstract: fqpf10n50
Text: FQP10N50CF / FQPF10N50CF N-Channel QFET FRFET® MOSFET 500 V, 10 A, 610 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET
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FQP10N50CF
FQPF10N50CF
FQPF10N50CF
fqpf10n50
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Untitled
Abstract: No abstract text available
Text: FDP18N20F / FDPF18N20FT N-Channel UniFETTM FRFET MOSFET 200 V, 18 A, 140 m Features Description • RDS on = 120 m (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDP18N20F
FDPF18N20FT
100nsec
200nsec
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Untitled
Abstract: No abstract text available
Text: FCP190N60E / FCPF190N60E N-Channel SuperFET II MOSFET 600 V, 20.6 A, 190 m Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior
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FCP190N60E
FCPF190N60E
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FDPF10N60NZ
Abstract: FDPF*10N60NZ FDP10N60NZ FDPF10N60 600v 10A ultra fast recovery diode
Text: FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m Features Description • RDS on = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and
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FDP10N60NZ
FDPF10N60NZ
FDPF10N60NZ
FDPF*10N60NZ
FDPF10N60
600v 10A ultra fast recovery diode
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FDPF12N60NZ
Abstract: fdpf12n60 FDP12N60NZ FDP12N60 12a650
Text: FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m Features Description • RDS on = 530 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and
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FDP12N60NZ
FDPF12N60NZ
FDPF12N60NZ
fdpf12n60
FDP12N60
12a650
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fdp5n50nz
Abstract: No abstract text available
Text: FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.5 A, 1.5 Ω Features • R Description DS on = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS
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FDP5N50NZ
FDPF5N50NZ
FDPF5N50NZ
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fdp8n50nz
Abstract: No abstract text available
Text: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and
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FDP8N50NZ/
FDPF8N50NZ
FDP8N50NZ
FDPF8N50NZ
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FDPF5N60NZ
Abstract: No abstract text available
Text: FDP5N60NZ / FDPF5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.5 A, 2.0 Features Description • RDS on = 1.65 (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and
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FDP5N60NZ
FDPF5N60NZ
FDPF5N60NZ
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Untitled
Abstract: No abstract text available
Text: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and
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FDP8N50NZ
FDPF8N50NZ
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Untitled
Abstract: No abstract text available
Text: FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDP20N50
FDPF20N50
FDPF20N50T
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pfv218n50
Abstract: PV218N50 18N50V2 PV2-18N50 FQPF18N50V2 pfv218 FQPF18N50 FQP18N50V2 18N50 pfv2
Text: FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description • 550V @TJ = 150°C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Typ. RDS on = 0.265Ω @VGS = 10 V
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FQP18N50V2/FQPF18N50V2
FQP18N50V2/FQPF18N50V2
factTO-220F
FQPF18N50V2
O-220F-3
FQPF18N50V2SDTU
pfv218n50
PV218N50
18N50V2
PV2-18N50
pfv218
FQPF18N50
FQP18N50V2
18N50
pfv2
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Untitled
Abstract: No abstract text available
Text: FDPF320N06L N-Channel PowerTrench MOSFET 60V, 21A, 25m Features Description • RDS on = 20m ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior
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FDPF320N06L
FDPF320N06L
O-220F
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FDPF*10N60NZ
Abstract: FDPF10N60NZ FDP10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power
Text: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
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FDP10N60NZ
FDPF10N60NZ
FDPF*10N60NZ
FDPF10N60NZ
fdpf10n60
FDPF10N60N
fdp10
FDPF
fdpf10n6
220 to 110 power
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