L2SK3018WT1G
Abstract: l2sk3018
Text: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G S-L2SK3018WT1G • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits.
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L2SK3018WT1G
S-L2SK3018WT1G
SC-70
AEC-Q101
L2SK3018WT1G
l2sk3018
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marking KN sc70
Abstract: L2SK3018WT1G Diode marking CODE 5M DIODE MARKING code 05M
Text: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G 3 • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.
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Original
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L2SK3018WT1G
SC-70
marking KN sc70
L2SK3018WT1G
Diode marking CODE 5M
DIODE MARKING code 05M
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SC-75
Abstract: sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019
Text: LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching 30V,100mA 1 Features 2 Low on-resistance SOT– 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit
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Original
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L2SK3019LT1G
100mA)
3000/Tape
L2SK3019LT3G
000/Tape
195mm
150mm
3000PCS/Reel
SC-75
sod-323 kn
MARKING kn SOd323
SOD-323 marking KN
sot-23 single diode mark PD
L2SK3019LT1G
code marking 2M sot-23 MOSFET
l2sk3019
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2SK3018
Abstract: No abstract text available
Text: 2SK3018W N-Channel POWER MOSFET 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE Description: *Gate Protection Diode * Low on-resistance. * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits.
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Original
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2SK3018W
OT-323
SC-70)
30-Oct-09
OT-323
2SK3018
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ww1 sot-23
Abstract: No abstract text available
Text: PT7M6218-6250CL/CH /NL | |
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Original
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PT7M6218-6250CL/CH
PT7M62xx
100mV
PT0270-2
ww1 sot-23
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PDF
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marking ww1 sot-23
Abstract: ww1 sot-23
Text: PT7M6218-6250CL/CH /NL | |
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Original
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PT7M6218-6250CL/CH
PT7M62xx
100mV
PT0270-2
marking ww1 sot-23
ww1 sot-23
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PDF
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marking KN sc70
Abstract: No abstract text available
Text: UMB4N IMB4A Transistor, digitai, dual, PNP, with 1 resistor Features Dimensions Units : mm • available In ÜMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMB4N and IMB4A; B4 U M B4N (UMT6) I'p V I 0.65 I • • J 0 .6 5 t r( 2r) h iflna c
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OCR Scan
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SC-74)
DTA114TKA)
SC-70)
SC-59)
marking KN sc70
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PDF
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0BIR
Abstract: marking KN sc70
Text: DTA144EE DTA144EUA DTA144EKA Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTA144EE, DTA144EUA, and DTA144EKA; 16 a built-in bias resistor allows inverter
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OCR Scan
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DTA144EE
DTA144EUA
DTA144EKA
SC-70)
SC-59)
DTA144EE,
DTA144EUA,
DTA144EKA;
DTA144EE
0BIR
marking KN sc70
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PDF
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Untitled
Abstract: No abstract text available
Text: UMG2N FMG2A Transistor, digitai, dual, NPN with 2 resistors Features Dimensions Units : mm • available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages • package marking: UMG2N and FMG2A; G2 • package contains two interconnected NPN digital transistors (DTC144EKA)
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OCR Scan
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SC-74A)
DTC144EKA)
SC-70)
SC-59)
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PDF
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ic T M 2313
Abstract: T M 2313 SC 2313
Text: RN2312,2313 RN2312 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm A N D DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process • Complementary to RN1312, RN1313
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OCR Scan
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RN2312
RN2312)
RN1312,
RN1313
SC-70
RN2313
RN2313
ic T M 2313
T M 2313
SC 2313
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PDF
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equivalent of SL 100 NPN Transistor
Abstract: simple SL 100 NPN Transistor SL 100 NPN Transistor transistor C 547 DTC114YUA
Text: DTC114YE DTC114YUA DTC114YKA Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC114YE (EMT3) package marking: DTC114YE, DTC114YUA, and DTC114YKA; 64 a built-in bias resistor allows inverter
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OCR Scan
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DTC114YE
DTC114YUA
DTC114YKA
SC-70)
SC-59)
DTC114YE,
DTC114YUA,
DTC114YKA;
DTC114YE
DTC114YUA
equivalent of SL 100 NPN Transistor
simple SL 100 NPN Transistor
SL 100 NPN Transistor
transistor C 547
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b10n
Abstract: No abstract text available
Text: UM B10N I M B 1 OA Transistor, digitai, dual, PNP, with 2 resistors Dimensions Units : mm Features available in UMT6 (UM6) and SMT6 (IMD, SC-74) package package marking: UMB10N and IMB10A; B10 UMB10N (UMT6) I t . 3 2 : 0. 1 I 0.65 I package contains two independent
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OCR Scan
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SC-74)
UMB10N
IMB10A;
DTA123JKA)
SC-70)
SC-59)
UMB10N
IMB10A
-100nA
UMB10N,
b10n
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e 634 transistor
Abstract: No abstract text available
Text: UMA10N FMA10A Transistor, digitai, dual, PNP, with 2 resistors Features Dimensions Units : mm • available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages • package marking: UMA1 ON and FMA10A; A10 • package contains two interconnected PNP digital transistors (DTA113ZKA)
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OCR Scan
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UMA10N
FMA10A
SC-74A)
FMA10A;
DTA113ZKA)
SC-70)
SC-59)
UMA10N
UMA10N,
e 634 transistor
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PDF
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DTC144GUA
Abstract: transistor marking P8 Transistor Bo 47
Text: DTC144GE DTC144GUA DTC144GKA Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTC144GE, DTC144GUA, and DTC144GKA; K26 a built-in bias resistor allows inverter
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OCR Scan
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DTC144GE
DTC144GUA
DTC144GKA
SC-70)
SC-59)
DTC144GE,
DTC144GUA,
DTC144GKA;
DTC144GE
10mA/0
transistor marking P8
Transistor Bo 47
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1308 ic
Abstract: KA 2309 marking KN sc70 A 1309 KN102-2
Text: RN1307,1308,1309 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. 2.1 ±0.1 • With Built-in Eias Resistors in« • Simplify Circuit Design . 1.3 ±0.1 1 0.65 Ö • Reduce a Quantity of Parts and Manufacturing Process
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OCR Scan
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RN1307
RN2307
RN1308
RN1309
SC-70
RN1307,
1308 ic
KA 2309
marking KN sc70
A 1309
KN102-2
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k2676
Abstract: No abstract text available
Text: UMB2N IMB2A Transistor, digitai, dual, PNP, Wlth 2 resistors Features Dimensions Units: mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package UMB2N (UMT6) package marking: UMB2N and IMB2A; B2 i'p n ' I 0.65 J package contains two independent PNP digital transistors (DTA144EKA),
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OCR Scan
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SC-74)
DTA144EKA)
SC-70)
SC-59)
k2676
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PDF
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10M1TR
Abstract: DTC143TKA
Text: DTC143TE DTC143TUA DTC143TKA Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC143TE (EMT3) package marking: DTC143TE, DTC143TUA, and DTC143TKA; 03 0 .7 + QJ
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OCR Scan
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DTC143TE
DTC143TUA
DTC143TKA
SC-70)
SC-59)
DTC143TE,
DTC143TUA,
DTC143TKA;
DTC143TE
10M1TR
DTC143TKA
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PDF
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DTA125TKA
Abstract: DTA125TSA DTA125TUA T106 T146 marking 9A SC-72
Text: DTA125TUA / DTA125TKA / DTA125TSA Digital transistor built-in resistor DTA125TUAI DTA125TKA / DTA125TSA •Features •External dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an
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OCR Scan
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DTA125TUA
DTA125TKA
DTA125TSA
DTA125TUA/
DTA125TKA/
50jia
100MHz
D024SED
DTA125TSA
T106
T146
marking 9A
SC-72
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SH IB A RN1312,RN1313 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R N 1 3 1•7 g mR« N ■w 1 ■3 v 1■3 «r u m u 'm m « r Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 2.1 ± 0.1
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OCR Scan
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RN1312
RN1313
RN2312,
RN2313
100IBA
RN1312
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A RN2312,RN2313 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2312, RN2313 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2.1 ±0.1 • With Built-in Bias Resistors • Simplify Circuit Design
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OCR Scan
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RN2312
RN2313
RN2312,
RN1312,
RN1313
RN2312
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device
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OCR Scan
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MUN5211T1
SC-70/SOT-323
0Cn354L|
MUN5211T1
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A RN1312,RN1313 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1312, RN1313 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 2.1 ± 0.1 With Built-in Bias Resistors Simplify Circuit Design
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OCR Scan
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RN1312
RN1313
RN1312,
RN2312,
RN2313
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2312,RN2313 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN7317 Mr • g mRN7313 « ■w v ■v r u m u 'm Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • 2.1 With Built-in Bias Resistors
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OCR Scan
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RN2312
RN2313
RN7317
RN7313
RN1312,
RN1313
RN2312
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PDF
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sot-23 MARKING CODE ZA
Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same
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OCR Scan
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OT-23,
OT-89
OT-143
BZV49
OT-23
2SC2059K
sot-23 MARKING CODE ZA
b0808
BCB47B
BCB17-16
marking za sot89
2SB0151K
marking k5 sot89
SOT 86 MARKING E4
n33 SOT-23
10Y sot-23
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