Untitled
Abstract: No abstract text available
Text: 2SK3292 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage 60 VDSS
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2SK3292
250mm2
25max
990312TM2fXHD
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PDF
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807D1
Abstract: jedec package standards so8 2440 so-8
Text: PD - 95309 IRF7324D1PbF • Lead-Free www.irf.com 1 10/13/04 IRF7324D1PbF 2 www.irf.com IRF7324D1PbF www.irf.com 3 IRF7324D1PbF 4 www.irf.com IRF7324D1PbF www.irf.com 5 IRF7324D1PbF 6 www.irf.com IRF7324D1PbF SO-8 Fetky Package Outline D DIM B 5 A 8 6 7
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Original
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IRF7324D1PbF
EIA-481
EIA-541.
807D1
jedec package standards so8
2440 so-8
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PDF
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807D1
Abstract: EIA-541 IRF7807D1 marking ky fet FET marking ky KY 189 2440 so-8
Text: PD - 95310 IRF7422D2PbF • Lead-Free www.irf.com 1 10/13/04 IRF7422D2PbF 2 www.irf.com IRF7422D2PbF www.irf.com 3 IRF7422D2PbF 4 www.irf.com IRF7422D2PbF www.irf.com 5 IRF7422D2PbF 6 www.irf.com IRF7422D2PbF SO-8 Fetky Package Outline D DIM B 5 A 8 6 7
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Original
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IRF7422D2PbF
EIA-481
EIA-541.
807D1
EIA-541
IRF7807D1
marking ky fet
FET marking ky
KY 189
2440 so-8
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PDF
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KY 189
Abstract: EIA-541 IRF7807D1 IRF7326D2PBF
Text: PD - 95311 IRF7326D2PbF • Lead-Free www.irf.com 1 10/13/04 IRF7326D2PbF 2 www.irf.com IRF7326D2PbF www.irf.com 3 IRF7326D2PbF 4 www.irf.com IRF7326D2PbF www.irf.com 5 IRF7326D2PbF 6 www.irf.com IRF7326D2PbF SO-8 Fetky Package Outline D DIM B 8 6 7 6 MIN
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Original
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IRF7326D2PbF
EIA-481
EIA-541.
KY 189
EIA-541
IRF7807D1
IRF7326D2PBF
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95310 IRF7422D2PbF • Lead-Free www.irf.com 1 10/13/04 IRF7422D2PbF 2 www.irf.com IRF7422D2PbF www.irf.com 3 IRF7422D2PbF 4 www.irf.com IRF7422D2PbF www.irf.com 5 IRF7422D2PbF 6 www.irf.com IRF7422D2PbF SO-8 Fetky Package Outline D DIM B 5 A 8 6 7
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Original
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IRF7422D2PbF
EIA-481
EIA-541.
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PDF
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SK1764 Silicon N-Channel MOS FET Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter
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Original
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2SK1764
Hitachi DSA00279
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PDF
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2SK1764
Abstract: marking ky fet FET marking ky
Text: 2SK1764 Silicon N Channel MOS FET Application UPAK Low frequency amplifier High speed switching 3 2 1 4 Features • Low on–resistance • High speed switching • 4 V Gate drive device can be driven from 5 V source • Suitable for switchingregulator, DC–DC
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Original
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2SK1764
2SK1764
marking ky fet
FET marking ky
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PDF
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dc-dc converter hitachi
Abstract: 2SK1764 2SK975 DSA003719
Text: 2SK1764 Silicon N-Channel MOS FET Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter
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Original
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2SK1764
dc-dc converter hitachi
2SK1764
2SK975
DSA003719
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PDF
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dc-dc converter hitachi
Abstract: 2SK1764 2SK975 DSA003639
Text: 2SK1764 Silicon N-Channel MOS FET ADE-208-1317 Z 1st. Edition Mar. 2001 Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter
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Original
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2SK1764
ADE-208-1317
dc-dc converter hitachi
2SK1764
2SK975
DSA003639
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PDF
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Hitachi DSA002748
Abstract: No abstract text available
Text: 2SK1764 Silicon N-Channel MOS FET November 1996 Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter
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2SK1764
D-85622
Hitachi DSA002748
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PDF
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FETKY MOSFET Schottky Diode
Abstract: EIA-541 IRF7807D1 IRF7807D2 MS-012AA
Text: PD- 95436A IRF7807D2PbF • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier • Lead-Free FETKY MOSFET / SCHOTTKY DIODE
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Original
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5436A
IRF7807D2PbF
EIA-481
EIA-541.
FETKY MOSFET Schottky Diode
EIA-541
IRF7807D1
IRF7807D2
MS-012AA
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95436A IRF7807D2PbF • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier • Lead-Free FETKY MOSFET / SCHOTTKY DIODE
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Original
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5436A
IRF7807D2PbF
EIA-481
EIA-541.
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free A A D 1 8 S 2 7 D S 3 6 D G 4 5 D A VDSS = 30V
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Original
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IRF7421D1PbF
EIA-481
EIA-541.
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PDF
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5M MARKING CODE SCHOTTKY DIODE
Abstract: HEXFET SO-8 marking ky fet MOSFET SO-8 IRF7807D1 EIA-541 807D1
Text: PD- 95304 IRF7421D1PbF FETKYä MOSFET / Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free Description A A D A 1 8 S 2 7 D S 3 6 D G 4
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Original
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IRF7421D1PbF
EIA-481
EIA-541.
5M MARKING CODE SCHOTTKY DIODE
HEXFET SO-8
marking ky fet
MOSFET SO-8
IRF7807D1
EIA-541
807D1
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 91412M IRF7422D2 FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A D 1 8 A 2 7 D
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Original
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91412M
IRF7422D2
EIA-481
EIA-541.
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7
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Original
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91705B
IRF7322D1
EIA-481
EIA-541.
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95298 IRF7322D1PbF FETKYä MOSFET / Schottky Diode l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free A A
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Original
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IRF7322D1PbF
EIA-481
EIA-541.
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PDF
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IRF7807D1
Abstract: No abstract text available
Text: PD - 95298 IRF7322D1PbF FETKYä MOSFET / Schottky Diode l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free A 1
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Original
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IRF7322D1PbF
EIA-481
EIA-541.
IRF7807D1
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95297 IRF7321D2PbF TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint l Lead-Free Description
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Original
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IRF7321D2PbF
EIA-481
EIA-541.
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PDF
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IRF7322D1
Abstract: IRF7807D1 MS-012AA
Text: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7
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Original
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91705B
IRF7322D1
EIA-481
EIA-541.
IRF7322D1
IRF7807D1
MS-012AA
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PDF
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IRF7807D1
Abstract: No abstract text available
Text: PD - 95297 IRF7321D2PbF TM Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint l Lead-Free Description FETKY MOSFET & Schottky Diode
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Original
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IRF7321D2PbF
EIA-481
EIA-541.
IRF7807D1
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PDF
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2SK1764KYTR
Abstract: 2sk1764 2SK1764KYTL-E 2SK1764KYTR-E SC-62 MARKING IS KY 2SK1764KYTLE 2SK1764KYTL
Text: 2SK1764 Silicon N Channel MOS FET REJ03G0970-0200 Previous: ADE-208-1317 Rev.2.00 Sep 07, 2005 Application • Low frequency amplifier • High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source
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Original
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2SK1764
REJ03G0970-0200
ADE-208-1317)
PLZZ0004CA-A
2SK1764KYTR
2sk1764
2SK1764KYTL-E
2SK1764KYTR-E
SC-62 MARKING IS KY
2SK1764KYTLE
2SK1764KYTL
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95160A IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free FETKY MOSFET & Schottky Diode A A S G 1 8 K 2 7 K 3 6 4
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Original
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5160A
IRF5803D2PbF
EIA-481
EIA-541.
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1764 Silicon N-Channel MOS FET HITACHI Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter
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OCR Scan
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2SK1764
2SK975
LLL111H
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PDF
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