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    MARKING L4 SOT Search Results

    MARKING L4 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation

    MARKING L4 SOT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DIODE marking L4

    Abstract: marking l4 sot-23 BAT54 marking L4
    Text: Schottky Barrier Diode BAT54 200 mA SOT-23 1. Anode 2. NC 3. Cathode GENERAL PURPOSE DETEDTION HIGH SPEED SWITCHING LOW REVERSE CURRENT AND FORWARD VLOTAGE MARKING: L4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS Reverse Voltage


    Original     		BAT54 OT-23 100mA DIODE marking L4 marking l4 sot-23 BAT54 marking L4 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRA2123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123J Unit: mm • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: L4


    Original     		DRA2123J DRC2123J UL-94 DRA2123J0L SC-59A O-236ts. PDF

    SI2304BDS

    Abstract: No abstract text available
    Text: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1


    Original     		Si2304BDS O-236 OT-23) Si2304BDS-T1 S-32137--Rev. 27-Oct-03 PDF

    Si2304BDS

    Abstract: Si2304BDS-T1
    Text: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1—E3


    Original     		Si2304BDS O-236 OT-23) Si2304BDS-T1--E3 S-32412--Rev. 24-Nov-03 Si2304BDS-T1 PDF

    Vishay diodes code marking

    Abstract: Vishay DaTE CODE VISHAY SOT MARKING CODE sot143 marking code A3 DO-214 Marking VISHAY SOT DATE CODE MARKING CODE f5 marking code vishay label BZX 4V7 do-219ab
    Text: VISHAY Vishay Semiconductors Marking of Diodes 8 7 6 5 GMDA05-6 Pin 1 1 2 3 4 18954 18583 Figure 4. SO-8 Figure 1. DO-214 L4 A3 View from top R9 F5 Date code: R = Year 9 = Month Cathode band Type code Date code 18920 Figure 5. SOD-123 Type code View from top


    Original     		GMDA05-6 DO-214 OD-123 LLP75-6A OD-323 DO-219AB) 28-Apr-04 BZW03C27 DO-41 OD-64 Vishay diodes code marking Vishay DaTE CODE VISHAY SOT MARKING CODE sot143 marking code A3 DO-214 Marking VISHAY SOT DATE CODE MARKING CODE f5 marking code vishay label BZX 4V7 do-219ab PDF

    transistor mark l6

    Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
    Text: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units


    Original     		KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 transistor mark l6 KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23 PDF

    MARKING L4 SOT89

    Abstract: SOT-89 5 98AON47037E
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−89, 5 LEAD CASE 528AB−01 ISSUE O DATE 23 NOV 2009 SCALE 2:1 D E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS INCLUDES LEAD FINISH.


    Original     		OT-89, 528AB-01 528AB MARKING L4 SOT89 SOT-89 5 98AON47037E PDF

    smd diode L43

    Abstract: smd diode L44 l44 smd marking code smd diode code l4 smd diode L42 DIODE marking L4 marking L44 SOT23 L43 SMD SMD DIODE L4 L43 DIODE
    Text: Spec. No. : C302N3-H Issued Date : 2003.04.14 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-23 small plastic SMD package.


    Original     		C302N3-H BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 OT-23 BAT54 BAT54A BAT54C OT-23 BAT54S UL94V-0 smd diode L43 smd diode L44 l44 smd marking code smd diode code l4 smd diode L42 DIODE marking L4 marking L44 SOT23 L43 SMD SMD DIODE L4 L43 DIODE PDF

    A2 DIODE SMD CODE MARKING

    Abstract: smd diode marking code a2 S3 marking DIODE smd diode code s3 A2 SMD CODE MARKING marking code e1 smd smd diode code l4 marking K2 diode smd schottky diode s3 - 13 DIODE smd marking A1
    Text: Spec. No. : C302S3-H Issued Date : 2004.04.13 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54S3/BAT54AS3 BAT54CS3/BAT54SS3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-323 very small plastic SMD package.


    Original     		C302S3-H BAT54S3/BAT54AS3 BAT54CS3/BAT54SS3 OT-323 BAT54 BAT54A BAT54C OT-323 BAT54S UL94V-0 A2 DIODE SMD CODE MARKING smd diode marking code a2 S3 marking DIODE smd diode code s3 A2 SMD CODE MARKING marking code e1 smd smd diode code l4 marking K2 diode smd schottky diode s3 - 13 DIODE smd marking A1 PDF

    L6 TRANSISTOR

    Abstract: l4 transistor SOT-323 marking L6 SOT-323 marking .L6 transistor marking L6 marking L6 SOT 2SA1611 2SC4177W L4 SOT marking l4 sot
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4177W FEATURES z Excellent hFE linearity. z High voltage and current. z Complementary to 2SA1611. z Small package. Pb Lead-free APPLICATIONS z SOT-323 Audio frequency general purpose amplifier.


    Original     		2SC4177W 2SA1611. OT-323 BL/SSSTF039 L6 TRANSISTOR l4 transistor SOT-323 marking L6 SOT-323 marking .L6 transistor marking L6 marking L6 SOT 2SA1611 2SC4177W L4 SOT marking l4 sot PDF

    transistor A 564

    Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1823L5 KST1623L6 KST1623L7 KST1623L3 KST1623L4 KST1623L5 transistor A 564 L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6 PDF

    BAT54AW

    Abstract: BAT54CW BAT54SW BAT54W
    Text: BAT54W Series SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 30 Volts Forward Current - 200 mAmpere FEATURES .087 2.2 .070(1.8) .054(1.35) .045(1.15) .087(2.2) .078(2.0) .004(.10)MIN. SOT-323 ● Low Turn-on Voltage ● Fast Switching ● Ultra-small surface mount package.


    Original     		BAT54W OT-323 OT-323, MIL-STD-750, BAT54AW BAT54CW BAT54SW PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA ICM: 100 Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range


    Original     		OT-23-3L OT-23-3L 2SC1623 100mA, PDF

    MARKING l7

    Abstract: sot-23 l6 2SC1623 transistor marking L6 MARKING L4
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA


    Original     		OT-23-3L OT-23-3L 2SC1623 100mA, MARKING l7 sot-23 l6 2SC1623 transistor marking L6 MARKING L4 PDF

    MARKING l7

    Abstract: l4 transistor 2SC1623 MARKING L4 transistor marking L6 L6 TRANSISTOR L6 IC marking L6
    Text: 2SC1623 SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 100 mA Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range


    Original     		2SC1623 OT-23-3L 100mA, MARKING l7 l4 transistor 2SC1623 MARKING L4 transistor marking L6 L6 TRANSISTOR L6 IC marking L6 PDF

    KST1623L7

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


    Original     		KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 100 mA ICM: Collector-base voltage 60 V V(BR)CBO:


    Original     		OT-23 OT-23 2SC1623 100mA, PDF

    MARKING L4

    Abstract: l4 transistor transistor marking L6 2SC1623 MARKING l7 L6 MARKING L6 TRANSISTOR
    Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA ICM: 100 Collector-base voltage


    Original     		OT-23-3L OT-23-3L 2SC1623 100mA, MARKING L4 l4 transistor transistor marking L6 2SC1623 MARKING l7 L6 MARKING L6 TRANSISTOR PDF

    2SC1623 sot-23

    Abstract: 2sc1623 sot-23 Marking L6 L6 TRANSISTOR marking L6 sot23 l4 sot-23 marking L6 marking transistor sot-23 npn sot23 l6 marking l4 sot-23 sot-23 Marking l7
    Text: 2SC1623 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High DC current gain :hFE=200(Typ)VCE=6V, High voltage:VCEO=50V — IC=1mA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		OT-23 2SC1623 OT-23 100mA 2SC1623 sot-23 2sc1623 sot-23 Marking L6 L6 TRANSISTOR marking L6 sot23 l4 sot-23 marking L6 marking transistor sot-23 npn sot23 l6 marking l4 sot-23 sot-23 Marking l7 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323  High DC Current Gain  Complementary to 2SA1611  High Voltage APPLICATIONS  General Purpose Amplification 1. BASE


    Original     		OT-323 2SC4177 2SA1611 100mA, PDF

    hFE-200

    Abstract: 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ)VCE=6V, z High voltage:VCEO=50V 1. BASE IC=1mA 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		OT-23 OT-23 2SC1623 100mA hFE-200 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23 PDF

    2SC1623 sot-23

    Abstract: 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7
    Text: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA


    Original     		2SC1623 OT-23 02-Aug-06 OT-23 2SC1623 sot-23 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7 PDF

    ATC700a

    Abstract: J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier
    Text: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.


    Original     		BLF2022-90; OT502A AN01001 ATC700a J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier PDF

    marking C8 amplifier

    Abstract: ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08
    Text: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.


    Original     		BLF2022-90; OT502A AN01001 marking C8 amplifier ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08 PDF