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    MARKING L4 TOSHIBA Search Results

    MARKING L4 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    MARKING L4 TOSHIBA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V


    Original     		TA4500F PDF

    MURATA GRM15

    Abstract: No abstract text available
    Text: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V


    Original     		TA4500F MURATA GRM15 PDF

    Untitled

    Abstract: No abstract text available
    Text: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Fronted IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V


    Original     		TA4500F PDF

    SAFDA243MRD

    Abstract: SAFDA243MRD9X00R00 9006 MCR01 TA4500F SAFDA243MRD9X00 SAFDA SAFDA243
    Text: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V


    Original     		TA4500F SAFDA243MRD SAFDA243MRD9X00R00 9006 MCR01 TA4500F SAFDA243MRD9X00 SAFDA SAFDA243 PDF

    2SK3074

    Abstract: No abstract text available
    Text: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P q = 630mW Gp^ 14.9dB 7j ^45 % M A X IM U M RATINGS Ta = 25°C)


    OCR Scan     		2SK3074 630mW 2200pF 520MHz 2SK3074 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER • • • Output Power Power Gain Drain Efficiency PO=630m W G p^ 14.9dB 7d ^45 % MAXIMUM RATINGS Ta = 25°C SYMBOL RATING


    OCR Scan     		2SK3074 961001EAA1 2200pF 2200pF PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE d Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER 1.6MAX. 4.6MAX. 0.4 +0.05 • • • Output Power Power Gain Drain Efficiency PO^630mW GP^ 14.9dB V j = 45%


    OCR Scan     		2SK3074 630mW 2200pF 2200pF PDF

    5948A

    Abstract: 100L 2SC4245 marking L4 800mhz transistor MURATA TTA23A100
    Text: T O S H IB A 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 Unit in mm TV TUNER, UHF MIXER APPLICATIONS. VHF-UHF BAND RF AMPLIFIER APPLICATIONS. 2.1 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


    OCR Scan     		2SC4245 SC-70 800MHz 830MHz, 5948A 100L 2SC4245 marking L4 800mhz transistor MURATA TTA23A100 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF M IXER APPLICATIONS. V H F- U H F BAND RF AM PLIFIER APPLICATIONS. 2.1 ± 0.1 . ± 0.1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		2SC4245 SC-70 PDF

    l20pF

    Abstract: No abstract text available
    Text: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.


    OCR Scan     		3SK249 l20pF PDF

    2SK3475

    Abstract: 0480F
    Text: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm • Output power: PO = 630 mW min · Gain: GP = 14.9dB (min) · Drain efficiency: ηD = 45% (min) Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SK3475 SC-62 2SK3475 0480F PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm • Output power: PO = 630 mW min • Gain: GP = 14.9dB (min) • Drain efficiency: ηD = 45% (min) Maximum Ratings (Ta = 25°C)


    Original     		2SK3475 SC-62 PDF

    0480F

    Abstract: transistor marking zg c2 2SK3475
    Text: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications • Output power: PO = 630 mW min • Gain: GP = 14.9dB (min) Drain efficiency: ηD = 45% (min) • Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SK3475 0480F transistor marking zg c2 2SK3475 PDF

    transistor marking t04

    Abstract: NF 846 3SK225
    Text: TOSHIBA 3SK225 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK225 TV TUNER, VHF RF AMPLIFIER APPLICATIONS. FM TUNER APPLICATIONS. TV TUNER, UHF RF AMPLIFIER APPLICATIONS. U nit in mm + 0.2 2.9 - Û3 1 • Superior Cross Modulation Performance.


    OCR Scan     		3SK225 transistor marking t04 NF 846 3SK225 PDF

    3SK249

    Abstract: No abstract text available
    Text: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 TV TUNER, UHF RF AMPLIFIER APPLICATIONS • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 20fF Typ. • Low N oise Figure. : N F = 1.5dB (Typ.)


    OCR Scan     		3SK249 3SK249 PDF

    2SK3475

    Abstract: No abstract text available
    Text: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original     		2SK3475 2SK3475 PDF

    transistor marking R2s

    Abstract: 3SK256
    Text: TO SH IBA 3SK256 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK256 TV TUNER, UHF RF AMPLIFIER APPLICATIONS • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.015pF Typ. • Low N oise Figure


    OCR Scan     		3SK256 015pF transistor marking R2s 3SK256 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original     		2SK3475 PDF

    grm36

    Abstract: grm36 murata murata lot no TG2403CT capacitor DD series murata murata MA Series MURATA GRM36 DD12 MCR01 LQG15
    Text: TG2403CT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2403CT 1.9GHz Band TX Fronted IC PHS, Digital Cordless Telecommunication Features Common Block • Positive voltage operation: VDD1 = VDD2 = VDD3 = VDD4 = 3.0 V typ . • Small package: CST20 (2.9 mm * 3.9 mm * 0.48 mm)


    Original     		TG2403CT CST20 grm36 grm36 murata murata lot no TG2403CT capacitor DD series murata murata MA Series MURATA GRM36 DD12 MCR01 LQG15 PDF

    MURATA GRM15 -V2

    Abstract: ICON12 lot No murata GRM21 TA4401CT GRM15 LQG15 TA440
    Text: TA4401CT TENTATIVE TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4401CT 1.9 ~ 2.5 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Application Wireless LAN IEEE802.11b/g Application Bluetooth Class 1 Application Features • Single voltage operation


    Original     		TA4401CT IEEE802 11b/g CST16 CSON16-P-0303-0 MURATA GRM15 -V2 ICON12 lot No murata GRM21 TA4401CT GRM15 LQG15 TA440 PDF

    C185 TRANSISTOR

    Abstract: 3sk151
    Text: TOSHIBA 3SK151 TOSHIBA FIELD EFFECT TRANSISTOR 3 SILICON N CHANNEL DUAL GATE MOS TYPE <; k 1 m Unit in mm TV TUNER VHF M IXER APPLICATIONS. VHF RF AM PLIFIER APPLICATIONS. + 0.2 2 . 9 - Cl3 • High Conversion Fain : G^S = 24.5dB Typ. • Low Noise Figure


    OCR Scan     		3SK151 200MHz C185 TRANSISTOR 3sk151 PDF

    L44A

    Abstract: marking L4 toshiba L4 toshiba marking code toshiba
    Text: TOSHIBA U1DL44A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE U 1 D L4 4 A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS = 200V Repetitive Peak Reverse Voltage V Average Forward Current I f (AV) = 1'° a Very Fast Reverse-Recovery Time


    OCR Scan     		U1DL44A 961001EAA2' L44A marking L4 toshiba L4 toshiba marking code toshiba PDF

    Untitled

    Abstract: No abstract text available
    Text: RFM00U7U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM00U7U VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original     		RFM00U7U PDF

    THS118

    Abstract: Hall Sensor gaas
    Text: TOSHIBA THS118 TOSHIBA HALL SENSOR GaAs ION IMPLANTED PLANAR TYPE T H S 1 18 Unit in mm HIGH STABILITY MOTOR CONTROL DIGITAL TACHOMETER. CRANK SHAFT POSITION SENSOR. • • • • Super Small Package. Excellent Temperature Characteristics. Wide Operating Temperature Range. ; —55~125°C


    OCR Scan     		THS118 961001EAA2' THS118 Hall Sensor gaas PDF