Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel
|
Original
|
L2SC1623QLT1G
3000/Tape
L2SC1623QLT3G
10000/Tape
L2SC1623RLT1G
L2SC1623RLT3G
L2SC1623SLT1G
|
PDF
|
L2SC1623QLT1G
Abstract: L2SC1623RLT1G L2SC1623SLT1G
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel
|
Original
|
L2SC1623QLT1G
3000/Tape
L2SC1623QLT3G
10000/Tape
L2SC1623RLT1G
L2SC1623RLT3G
L2SC1623SLT1G
L2SC1623QLT1G
L2SC1623RLT1G
L2SC1623SLT1G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel
|
Original
|
L2SC1623QLT1G
3000/Tape
L2SC1623QLT3G
10000/Tape
L2SC1623RLT1G
L2SC1623RLT3G
L2SC1623SLT1G
|
PDF
|
L6 marking 5-pin
Abstract: BAR 17
Text: Silicon PIN Diodes BAR 17 »Current-controlled RF resistor for RF attenuation i Switching applications above 1 MHz Type Marking Ordering code tape and reel Pin configuration Package BAR 17 L6 Q 62702-A 7 8 5 1o- f» -o3 SOT-23 Maximum Ratings Parameter
|
OCR Scan
|
2702-A
OT-23
L6 marking 5-pin
BAR 17
|
PDF
|
dra2143X
Abstract: sot-23 l6
Text: DRA2143X Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2143X Unit: mm • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: L6
|
Original
|
DRA2143X
DRC2143X
UL-94
DRA2143X0L
SC-59A
O-236ts.
dra2143X
sot-23 l6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon PIN Diode BAR 17 • RF switch • RF attenuator for frequencies above 1 MHz • Low distortion factor • Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 17 L6 Q62702-A858 Pin Configuration
|
OCR Scan
|
Q62702-A858
OT-23
53SLDS
|
PDF
|
marking L6
Abstract: marking code SS SOT23
Text: SIEMENS Silicon PIN Diode BAR 17 • RF switch • RF attenuator for frequencies above 1 MHz • Low distortion factor • Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 17 L6 Q62702-A858 Pin Configuration
|
OCR Scan
|
Q62702-A858
OT-23
marking L6
marking code SS SOT23
|
PDF
|
Q62702-A858
Abstract: No abstract text available
Text: Silicon PIN Diode BAR 17 ● RF switch ● RF attenuator for frequencies above 1 MHz ● Low distortion factor ● Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 17 L6 Q62702-A858 Pin Configuration Package1)
|
Original
|
Q62702-A858
OT-23
Q62702-A858
|
PDF
|
transistor mark l6
Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
Text: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units
|
Original
|
KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
transistor mark l6
KST1623L6
KST1623L3
KST1623L4
KST1623L5
KST1623L7
sot-23 Marking l7
SOT23 MARKING L7
marking L5 sot-23
|
PDF
|
transistor A 564
Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
|
OCR Scan
|
KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1823L5
KST1623L6
KST1623L7
KST1623L3
KST1623L4
KST1623L5
transistor A 564
L6 TRANSISTOR
kst1623
L6 MARKING
transistor L7
transistor marking l6
|
PDF
|
L6 TRANSISTOR
Abstract: l4 transistor SOT-323 marking L6 SOT-323 marking .L6 transistor marking L6 marking L6 SOT 2SA1611 2SC4177W L4 SOT marking l4 sot
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4177W FEATURES z Excellent hFE linearity. z High voltage and current. z Complementary to 2SA1611. z Small package. Pb Lead-free APPLICATIONS z SOT-323 Audio frequency general purpose amplifier.
|
Original
|
2SC4177W
2SA1611.
OT-323
BL/SSSTF039
L6 TRANSISTOR
l4 transistor
SOT-323 marking L6
SOT-323 marking .L6
transistor marking L6
marking L6 SOT
2SA1611
2SC4177W
L4 SOT
marking l4 sot
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA ICM: 100 Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range
|
Original
|
OT-23-3L
OT-23-3L
2SC1623
100mA,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 100 mA ICM: Collector-base voltage 60 V V(BR)CBO:
|
Original
|
OT-23
OT-23
2SC1623
100mA,
|
PDF
|
MARKING L4
Abstract: l4 transistor transistor marking L6 2SC1623 MARKING l7 L6 MARKING L6 TRANSISTOR
Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA ICM: 100 Collector-base voltage
|
Original
|
OT-23-3L
OT-23-3L
2SC1623
100mA,
MARKING L4
l4 transistor
transistor marking L6
2SC1623
MARKING l7
L6 MARKING
L6 TRANSISTOR
|
PDF
|
|
|
KST1623L7
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage
|
Original
|
KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
|
PDF
|
MARKING l7
Abstract: l4 transistor 2SC1623 MARKING L4 transistor marking L6 L6 TRANSISTOR L6 IC marking L6
Text: 2SC1623 SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 100 mA Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range
|
Original
|
2SC1623
OT-23-3L
100mA,
MARKING l7
l4 transistor
2SC1623
MARKING L4
transistor marking L6
L6 TRANSISTOR
L6 IC
marking L6
|
PDF
|
hFE-200
Abstract: 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ)VCE=6V, z High voltage:VCEO=50V 1. BASE IC=1mA 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
OT-23
OT-23
2SC1623
100mA
hFE-200
2SC1623
l4 transistor
l6 sot23
l5 transistors
L5 SOT23
MARKING l7
transistor marking L6
l5 transistor SOT-23
marking l4 sot-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA z High voltage:VCEO=50V 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
OT-23
OT-23
2SC1623
100mA
|
PDF
|
2SC1623 sot-23
Abstract: 2sc1623 sot-23 Marking L6 L6 TRANSISTOR marking L6 sot23 l4 sot-23 marking L6 marking transistor sot-23 npn sot23 l6 marking l4 sot-23 sot-23 Marking l7
Text: 2SC1623 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain :hFE=200(Typ)VCE=6V, High voltage:VCEO=50V IC=1mA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
|
Original
|
OT-23
2SC1623
OT-23
100mA
2SC1623 sot-23
2sc1623
sot-23 Marking L6
L6 TRANSISTOR
marking L6 sot23
l4 sot-23 marking
L6 marking transistor sot-23
npn sot23 l6
marking l4 sot-23
sot-23 Marking l7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323 High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification 1. BASE
|
Original
|
OT-323
2SC4177
2SA1611
100mA,
|
PDF
|
2SC1623 sot-23
Abstract: 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7
Text: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA
|
Original
|
2SC1623
OT-23
02-Aug-06
OT-23
2SC1623 sot-23
2SC1623
marking l4 sot-23
marking L6
MARKING L4
L6 sot-23
sot-23 Marking l7
top marking L6
SOT23 MARKING L7
|
PDF
|
ATC700a
Abstract: J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier
Text: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.
|
Original
|
BLF2022-90;
OT502A
AN01001
ATC700a
J141 mosfet
atc700a capacitor
ATC100A
W625
78L08
AN01001
BLF2022-90
marking L5
D marking amplifier
|
PDF
|
marking C8 amplifier
Abstract: ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08
Text: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.
|
Original
|
BLF2022-90;
OT502A
AN01001
marking C8 amplifier
ATC700A
atc100a
w262
atc700a capacitor
78L08
AN01001
BLF2022-90
CAPACITOR MARKING
transistor 78l08
|
PDF
|
transistor mark l6
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
|
OCR Scan
|
KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
transistor mark l6
|
PDF
|
