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    MARKING LBE Search Results

    MARKING LBE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING LBE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Y parameters of transistors

    Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
    Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .


    Original     		PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor

    LBE2003S

    Abstract: LBE2009S LCE2009S SC15
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product specification LBE2003S;


    Original     		PDF LBE2003S; LBE2009S; LCE2009S LBE2003S LBE2009S OT441A LCE2009S SC15

    power transistors table

    Abstract: LBE2003S LBE2009S
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S NPN microwave power transistors Product specification Supersedes data of 1997 Mar 03 1998 Feb 16 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S FEATURES


    Original     		PDF LBE2003S; LBE2009S LBE2003S LBE2009S SCA57 125108/00/03/pp16 power transistors table

    zkb* vac

    Abstract: LINDNER fuses WEIDMULLER WDU2.5 IEC 947-7-1 terminal block 400v diode catalogue LINDNER fuses neozed WPE 35 EARTH 101050 level measurement with displacer SIBA FUSE FF D-FUSE E-16
    Text: Terminals New in this catalogue W-Series Installation terminal blocks WPE 35 N Page 2/14 different colour versions ZQV Cross-connections Page 2/5 Installation terminal blocks WDU 35 N Pluggable cross-connections for WDU 2.5 Page 2/9 Page 2/4 Cross-connections


    Original     		PDF TS15/TS35 zkb* vac LINDNER fuses WEIDMULLER WDU2.5 IEC 947-7-1 terminal block 400v diode catalogue LINDNER fuses neozed WPE 35 EARTH 101050 level measurement with displacer SIBA FUSE FF D-FUSE E-16

    Zener Diode SOT-23 929b

    Abstract: 13.8 8w zener diode zener diode t5 MMSZ4V7T1 MOTOROLA 929B 953b X2 diode zener zener diode T3 Marking diodes zener de 3.5 volts 938B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes 3 Cathode Manufacturing Locations: 1 Anode WAFER FAB: Phoenix, Arizona


    Original     		PDF OT-23 03A-03 Zener Diode SOT-23 929b 13.8 8w zener diode zener diode t5 MMSZ4V7T1 MOTOROLA 929B 953b X2 diode zener zener diode T3 Marking diodes zener de 3.5 volts 938B

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 01-06-20 R. MONNIN Drawing updated to reflect current requirements. - ro THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET


    Original     		PDF 10-BIT

    QML-38535

    Abstract: 5962-E194-02
    Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Drawing updated to reflect current requirements. –rrp APPROVED 02-01-11 R. MONNIN REV SHEET REV SHEET REV STATUS REV A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY


    Original     		PDF 16-BIT QML-38535 5962-E194-02

    GENERAL SEMICONDUCTOR MARKING lg 68a

    Abstract: motorola ZENER 39a 1SMB12AT3 436 LZ 051 6V8A 1SMB70CAT3 LMC 447 MOTOROLA 6v8a 1SMB11CAT3 1SMB10CAT3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 600 WATT PEAK POWER Zener Transient Voltage Suppressors The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low


    Original     		PDF

    953B

    Abstract: MOTOROLA 929B PLASTIC SURFACE MOUNT ZENER DIODES marking 918b motorola diode marking 925b ZENER 1 WATT 6.8V 3 Watt Zener Diode 914B 955B 919b diode 923b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913BT3 through 1SMB5956BT3 3 Watt Plastic Surface Mount Silicon Zener Diodes This complete new line of 3 Watt Zener Diodes offers the following advantages. Specification Features: • A Complete Voltage Range — 3.3 to 200 Volts


    Original     		PDF 1SMB5913BT3 1SMB5956BT3 953B MOTOROLA 929B PLASTIC SURFACE MOUNT ZENER DIODES marking 918b motorola diode marking 925b ZENER 1 WATT 6.8V 3 Watt Zener Diode 914B 955B 919b diode 923b

    1721E50R

    Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
    Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking


    OCR Scan     		PDF LAE4001R LAE4002S LBE2003S LBE2009S LCE2009S LEE1015T LTE21009R LTE21015R LTE21025R LTE42005S 1721E50R Marking Codes Philips MARKING CODE 2327E40R marking codes transistors transistor 502 r8 marking marking Code philips

    A530B

    Abstract: HSDC614H1B HSDC614-H-1B
    Text: r> PIN WHITE EPOXY INKPART MARKING 2.2 SO PIN 19 REF PIN 36 (R EF) 10 II 12 13 14 15 16 17 18 O M PUTER ¡O N V E R S IO N S □ R P O R A T IO N F S C M :B 1 D 8 B MODEL: H S D C B Í 4 - H - 1 B • PIN 18 (REF) DATE CODE-» (STAMPED) \ SERIAL NUMBER (STAMPED)


    OCR Scan     		PDF 6108B SPECIFICATIONS----A530Ã fB5307 A5308 A530B HSDC614H1B HSDC614-H-1B

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE i i bbS3T3i ObE J> a • MAINTENANCE TYPES LBE/LCE1004R LBE/LCE1010R for new design use LBE/LC E2003S and LBE/LCE2009S T - S 3 -OS' M IC R O W A V E LIN EAR PO W ER T R A N S IST O R S N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.


    OCR Scan     		PDF LBE/LCE1004R LBE/LCE1010R E2003S LBE/LCE2009S) E1004R E1010R 1004R 1010R

    LBE1004R

    Abstract: amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier LBE1010R LCE1004R LCE1010R Marking LBE
    Text: OLE T> N AMER P H IL IP S /D IS C R E T ! •FbbSB^l MAINTENANCE TYPES Q O lim ? JI' for new design use LBE/LCE2003S and LBE/LCE2009S S ■ LBE/LCE1004R LBE/LCE1010R MICROWAVE LINEAR POWER TRANSISTORS N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.


    OCR Scan     		PDF LBE/LCE1004R LBE/LCE2003S LBE/LCE2009S) LBE/LCE1010R LBE1004R LBE1010R LCE1004R LCE1010R IEC134) 1004R amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier Marking LBE

    YTS3904

    Abstract: YTS3906
    Text: TOSHIBA TRANSISTOR YTS3904 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES : . Low Leakage Current : !cEV*50nA(Max.), lBEV*50aA(Max.) <3 V c e -30V, V BE-3V . Excellent DC Current Gain Linearity


    OCR Scan     		PDF YTS3904 YTS3906 SC-59 Ta-25 VCE-20V, IC-10mA f-100MHz 20per* YTS3904 YTS3906

    IC BL 176A

    Abstract: No abstract text available
    Text: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.


    OCR Scan     		PDF LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA LBE2003S LBE2009S LCE2003S LCE2009S LBE2009SA LCE2009SA IC BL 176A

    409 Marking Code

    Abstract: Data Handbook sc15
    Text: Philips Semiconductors Product specification LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors FEATURES DESCRIPTION • Diffused emitter ballasting resistors The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal


    OCR Scan     		PDF LBE2003S; LBE2009S; LCE2009S LBE2003S LBE2009S OT441A LCE2009S OT442A LBE2003S LBE2009S 409 Marking Code Data Handbook sc15

    LBE2003S

    Abstract: LBE2009S LCE2009S SC15
    Text: DISCRETE SEMICONDUCTORS LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer


    OCR Scan     		PDF LBE2003S; LBE2009S; LCE2009S LBE2003S LBE2009S OT441A LCE2009S SC15

    LBE2003S

    Abstract: LCE2003S sfe 5,5 ma LBE2009S LBE2009SA LCE2009S LCE2009SA 46 MARKING CODE
    Text: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA PHILIPS I N T E RNATIONAL 5bE D • 711QA2b ODMblflS ■ PHIN MICROWAVE LINEAR POWER TRANSISTORS NPN transistors fo r use in a co m m o n -e m itte r class-A linear p o w e r a m p lifie r up to 4 GHz. D iffused e m itte r ballasting resistors, self-aligned process e n tire ly ion im planted and gold m e ta lliza tio n


    OCR Scan     		PDF LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA 7110fl2b LBE2003S LBE2009S LCE2003S LCE2009S LBE2009SA LCE2009SA sfe 5,5 ma 46 MARKING CODE

    D 823 transistor

    Abstract: BF56 BF821S
    Text: TELEFUNKEN ELECTRONIC 17E » • a'lSDQ^b 0 0 0 ^ 2 3 IALGG BF 821 S BF 823 S TTllUlFüiKIKIKI electronic C rM tM "ftchrtotoQtes Silicon PNP Epitaxial Planar Transistors A p p lica tio n s: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power


    OCR Scan     		PDF

    "marking nh"

    Abstract: 1SMB10 1SMB10A 1SMB11 1SMB11A 1SMB12 1SMB12A 1SMB13 1SMB170 403A-01
    Text: M O T O R O L A SC D IOD ES / OP T O 5SÉ b3L7555 DDÒIBET □ J> MOTOROLA Order this data sheet by 1SMB5.Ô/D T - a - 2 3 SEMICONDUCTOR piivjì TECHNICAL DATA 1SMB5.0, A Zener O vervoltage Transient Su p p re sso rs thru 1SM B170, A . . . this device is designed specifically for transient voltage suppression. The wide leads


    OCR Scan     		PDF b3L7555 T-a-23 "marking nh" 1SMB10 1SMB10A 1SMB11 1SMB11A 1SMB12 1SMB12A 1SMB13 1SMB170 403A-01

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    GENERAL SEMICONDUCTOR MARKING lg 68a

    Abstract: 33A d P6SMB15CA motorola ZENER 39a 1SMB12AT3 436 LZ ZENER SMB marking KR 1SMB11CAT3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G EN ER A L DATA 600 WATT PEAK POWER GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Transient Voltage Suppressors The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low


    OCR Scan     		PDF 0J220 b3b72SS GENERAL SEMICONDUCTOR MARKING lg 68a 33A d P6SMB15CA motorola ZENER 39a 1SMB12AT3 436 LZ ZENER SMB marking KR 1SMB11CAT3

    51a zener

    Abstract: motorola ZENER 39a 10029a 1SMB5917A 6833a 2306C 1SMB5914A Motorola Zener 1SMB5913A 1SMB5915A
    Text: M O T O R O L A SC D IODES/OPTO 2SE D b3fcj?255 Ü0Ô1325 3 • Order this data sheet by 1SMB5913A/D 1h I-5T MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1SMB5956A, B 1.5 W att P lastic Surface M o u n t Silico n Zener D iodes . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:


    OCR Scan     		PDF 1SMB5913A/D 1SMB5913A, 1SMB5956A, 2306C 1SMB5913A 2415S 51a zener motorola ZENER 39a 10029a 1SMB5917A 6833a 1SMB5914A Motorola Zener 1SMB5915A

    Diode Marking ZM Motorola

    Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
    Text: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:


    OCR Scan     		PDF 1SMB5913A/D 1SMB5913A, 1SMB5956A, 1SMB5913A 241Sb C6459& Diode Marking ZM Motorola DIODE MOTOROLA 39A ZENER 18-2 5t