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    MARKING LF NPN Search Results

    MARKING LF NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING LF NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODE LF

    Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23 bsr14 nxp transistors Standard Marking TRANSISTOR SMD letter CODE PACKAGE SOT23 smd marking NXP date code marking BSR14 SOT23 semiconductors replacement guide LF marking code smd transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA


    Original     		PDF BSR13; BSR14 BSR15 BSR16. BSR13 BSR14 TRANSISTOR SMD MARKING CODE LF NXP TRANSISTOR SMD MARKING CODE SOT23 nxp transistors Standard Marking TRANSISTOR SMD letter CODE PACKAGE SOT23 smd marking NXP date code marking BSR14 SOT23 semiconductors replacement guide LF marking code smd transistor

    TRANSISTOR SMD MARKING CODE LF

    Abstract: smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1
    Text: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features „ Low current (max. 150 mA) „ Low voltage (max. 50 V)


    Original     		PDF 2PA1774 OT416 SC-75) 2PC4617. sym013 2PA1774Q 2PA1774R 2PA1774S SC-75 OT416 TRANSISTOR SMD MARKING CODE LF smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1

    NXP date code marking

    Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
    Text: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview


    Original     		PDF PMBT2222; PMBT2222A O-236AB) PMBT2222 PMBT2222A O-236AB PMBT2907 PMBT2907A NXP date code marking marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-23-3L 2SC3052 OT-23-3L 100mA,

    2sc3052

    Abstract: MARKING lf npn
    Text: 2SC3052 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: 0.2 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 0. 35


    Original     		PDF 2SC3052 OT-23-3L 100mA, 2sc3052 MARKING lf npn

    2sc3052

    Abstract: sot-23 Marking Lf
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.2 A ICM: Collector-base voltage


    Original     		PDF OT-23-3L 2SC3052 OT-23-3L 100mA, 2sc3052 sot-23 Marking Lf

    sot-23 Marking Lf

    Abstract: sot-23 Marking LG 2sc3052 MARKING LG
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃


    Original     		PDF OT-23 OT-23 2SC3052 100mA, sot-23 Marking Lf sot-23 Marking LG 2sc3052 MARKING LG

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain


    Original     		PDF OT-23 OT-23 2SC3052 100mA 100mA,

    2sc3052

    Abstract: sot-23 Marking LG
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain


    Original     		PDF OT-23 OT-23 2SC3052 100mA 100mA, 2sc3052 sot-23 Marking LG

    lg smd transistor LF

    Abstract: lg smd transistor transistor smd marking LE 2sc3052 if marking LE smd transistor MARKING lg 2sc3052 smd transistor marking LF
    Text: Transistors SMD Type NPN Transistor 2SC3052 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Power dissipation :PC=0.15W 0.55 Collector current :IC=0.2A +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05


    Original     		PDF 2SC3052 OT-23 100mA lg smd transistor LF lg smd transistor transistor smd marking LE 2sc3052 if marking LE smd transistor MARKING lg 2sc3052 smd transistor marking LF

    sot-23 Marking Lf

    Abstract: transistor marking LF sot-23 sot-23 Marking LG marking NF sot-23 transistor marking LF SOT-23 lf
    Text: 2SC3052 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SC3052 OT-23 100mA 100mA, sot-23 Marking Lf transistor marking LF sot-23 sot-23 Marking LG marking NF sot-23 transistor marking LF SOT-23 lf

    2SC3650

    Abstract: 2Sc3650 equivalent MARKING CF
    Text: 2SC3650 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES Low collector-emitter saturation voltage VCE sat High DC current gain Large current capacity LF amp, various drivers, muting circuit MAXIMUM RATINGS (TA=25 oC unless otherwise noted)


    Original     		PDF 2SC3650 OT-89 08-May-2007 2SC3650 2Sc3650 equivalent MARKING CF

    2SC3650

    Abstract: No abstract text available
    Text: 2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. Large Current Capacity. 4 High DC Current Gain Low VCE sat 1 2


    Original     		PDF 2SC3650 OT-89 02-Nov-2011 500mA 500mA, 2SC3650

    Untitled

    Abstract: No abstract text available
    Text: 2SD2150 Transistor, NPN Features Dimensions Units : mm • • • available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SD2150; CF^, where ★ is hFE code 2SD2150 (MPT3) +0.2 4 .5 - 0 .1 lf> 1.6 *0.1 I If excellent current-to-gain characteristics


    OCR Scan     		PDF 2SD2150 OT-89, SC-62) 2SD2150; 2SD2150

    CZT2222A

    Abstract: No abstract text available
    Text: Central” CZT2222A S e m ico n d u cto r Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general


    OCR Scan     		PDF CZT2222A OT-223 OT-223 26-September

    Untitled

    Abstract: No abstract text available
    Text: Central Semiconductor Corp. CMPT3019 NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general


    OCR Scan     		PDF CMPT3019 CMPT3019 OT-23 30itiA 15OmA, 150mA, 150mA 500mA 100mA,

    4392

    Abstract: 4392 ic equivalent canal TE4392 4392 a ic MARKING 3671 to 2N4393
    Text: A C T IV E COMPONENTS FO R H YB R ID C IR C U IT S COMPOSANTS A C T/FS POUR C IR C U ITS H Y B R ID E S CB-145 TM-3 Silicon NPN transistors, VH F - UHF amplification Transistors NPN silicium, amplification VHF •UHF Type Type Marking Marquage il h21E ^ / v CE


    OCR Scan     		PDF CB-145 A2N918 4392 4392 ic equivalent canal TE4392 4392 a ic MARKING 3671 to 2N4393

    Untitled

    Abstract: No abstract text available
    Text: 2SC5051 Silicon NPN Epitaxial HITACHI Application VH F / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz. Typ • High gain, low noise figure PG = 14.5 dB Ty p, NF = 1.1 dB Ty p at f = 900 MHz Outline C M PA K 2 784 1. Emitter


    OCR Scan     		PDF 2SC5051 IS21I

    58m transistor

    Abstract: No abstract text available
    Text: KSC2756 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER . HIGH Gee Typ. 23dB ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage V Em itter-Base Voltage C ollector C urrent V Rating Unit


    OCR Scan     		PDF KSC2756 58m transistor

    c 2579 power transistor

    Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
    Text: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage


    OCR Scan     		PDF JEDECTO126 15A3DIN c 2579 power transistor TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ

    MARKING H07

    Abstract: No abstract text available
    Text: DTC363TK Digital transistor, NPN, with 1 resistor Features • available in SMT3 SMT, SC-59 package • package marking: DTC363TK; H07 Dimensions (Units : mm) • DTC363TK (SMT3) 1 0 * 0 .2 0.0 * 0 I 096 in addition to standard features of digital transistor, this transistor has:


    OCR Scan     		PDF DTC363TK SC-59) DTC363TK; DTC363TK MARKING H07

    Diode marking MFW

    Abstract: MDC03 Marking TRANSISTOR 737 MFW14 transistor marking D9 common collector npn array pnp 8 transistor array transistor 736
    Text: IMD9A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: IMD9A; D9 • IMD9A (SMT6) 2 .9±0.Z package contains a PNP (DTA114YKA) and an NPN (DTC114YKA) transistor, each with


    OCR Scan     		PDF SC-74) DTA114YKA) DTC114YKA) SC-59) Diode marking MFW MDC03 Marking TRANSISTOR 737 MFW14 transistor marking D9 common collector npn array pnp 8 transistor array transistor 736

    D425 transistor

    Abstract: TRANSISTOR D425 D425 2SA1602 rfft 2SC4154 X10-3 MARKING HRA j506
    Text: SMALL-SIGNAL TRANSISTOR 2SC4154 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION 2SC4154 is a super mini package resin sealed silicon NPN epitaxial OUTLINE DRAWING Unit: mm 2 .1± 0.2 type transistor. It is designed for low frequency voltage amplify application.


    OCR Scan     		PDF 2SC4154 2SC4154 2SA1602. 100mA, SC-70 270Hz 270Hz X10-3 D425 transistor TRANSISTOR D425 D425 2SA1602 rfft X10-3 MARKING HRA j506

    BCW65B

    Abstract: BCW65A BCW65C
    Text: 34 M O T O R O L A SC { D I O D E S / O P T O J 6367255 MOTOROLA SC »F|bBt,7aSS 0030253 1 34C D <DIODES/OPTO> 3825 3 SOT23 continued BCW65A,B,C DEVICE NO. SMALL-SIGNAL NPN TRANSISTO R TOP VIEW n B Device C I I • Designed for low-frequency driver stage and switching


    OCR Scan     		PDF BCW65A BCW65B BCW65C 3b72S5 D03fl2S4