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    MARKING M6 TRANSISTOR Search Results

    MARKING M6 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    MARKING M6 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S9015

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz S9015

    S9015 SOT-23

    Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100A, -100mA, -10mA S9015 SOT-23 m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz

    m6 marking transistor sot-23

    Abstract: sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6
    Text: S9015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF S9015 OT-23 OT-23 S9014 -100A, -100mA, -10mA m6 marking transistor sot-23 sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6

    fairchild marking codes sot-23

    Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
    Text: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -50


    Original     		PDF KST812M3/M4/M5/M6/M7 OT-23 KST5088 fairchild marking codes sot-23 marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component

    m6 marking transistor sot-23

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier


    Original     		PDF 2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23

    surface mounted m6 transistor

    Abstract: sot-323 Marking M6 m6 marking transistor 2SA1611W 2SC4177 pnp transistor 6V marking m5 marking M6 transistor M6 Marking pnp
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES 2SA1611W Pb z High voltage VCEO=-50V. z Excellent HFE Linearity. z High DC current gain : hFE=200 typ. z Complementary to 2SC4177. Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.


    Original     		PDF 2SA1611W 2SC4177. OT-323 BL/SSSTF033 surface mounted m6 transistor sot-323 Marking M6 m6 marking transistor 2SA1611W 2SC4177 pnp transistor 6V marking m5 marking M6 transistor M6 Marking pnp

    m6 marking transistor sot-23

    Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier


    Original     		PDF 2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23 sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623

    M7 marking

    Abstract: marking of m7 diodes 2SA1611 marking m5
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SA1611 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR PCM : 0.15 1. 25¡ À0. 05 1. 01 REF Power dissipation W (Tamb=25℃) 0. 30 1. 30¡ À0. 03


    Original     		PDF OT-323 OT-323 2SA1611 -100mA, -10mA M7 marking marking of m7 diodes 2SA1611 marking m5

    WEJ Electronic

    Abstract: marking M4 marking of m7 diodes 2SA1611 marking m5
    Text: 2SA1611 SOT-323 2SA1611 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.15 1. 25¡ À0. 05 1. 01 REF 3. COLLECTOR W (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current ICM : -0.1 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range


    Original     		PDF 2SA1611 OT-323 -100mA, -10mA WEJ Electronic marking M4 marking of m7 diodes 2SA1611 marking m5

    2SA1611

    Abstract: marking m5 90-18 m6 marking transistor
    Text: Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 2SA1611 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR PCM : 0.15 1. 25¡ À0. 05 1. 01 REF Power dissipation W (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current


    Original     		PDF OT-323 OT-323 2SA1611 -100mA, -10mA 2SA1611 marking m5 90-18 m6 marking transistor

    m6 marking transistor sot-23

    Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
    Text: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF 2SA812 OT-23 OT-23 2SC1623 -100A, -100mA, -10mA -10mA m6 marking transistor sot-23 transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812

    m6 marking transistor sot-23

    Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER


    Original     		PDF OT-23 2SA812 OT-23 2SC1623 -100A, -100mA, -10mA m6 marking transistor sot-23 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER


    Original     		PDF OT-23 2SA812 OT-23 2SC1623 -100mA, -10mA

    m6 marking transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to TP9014NND03


    Original     		PDF WBFBP-03B TP9015NND03 WBFBP-03B TP9014NND03 Vol45 -100A, -100mA, -10mA m6 marking transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to TP9014NND03


    Original     		PDF WBFBP-03B TP9015NND03 WBFBP-03B TP9014NND03 -100mA, -10mA -10mA 30MHz

    CSG3001-18A04

    Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
    Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power


    Original     		PDF 400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04

    L2SA812QLT1G

    Abstract: L2SA812RLT1G L2SA812SLT1G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽ We declare that the material of product compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF L2SA812QLT1G L2SC1623 L2SA812QLT1G 3000/Tape L2SA812QLT3G 10000/Tape L2SA812RLT1G L2SA812RLT3G L2SA812RLT1G L2SA812SLT1G

    M6 SOT23-3

    Abstract: L2SA812QLT1 L2SA812QLT1G L2SA812RLT1 L2SA812RLT1G L2SA812SLT1 L2SA812SLT1G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812*LT1 FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Marking Shipping M8 3000/Tape&Reel


    Original     		PDF L2SA812 L2SC1623 3000/Tape L2SA812QLT1 L2SA812QLT1G M6 SOT23-3 L2SA812QLT1 L2SA812QLT1G L2SA812RLT1 L2SA812RLT1G L2SA812SLT1 L2SA812SLT1G

    KST812M7

    Abstract: marking m3 transistor KST5088 KST812M3 KST812M4 KST812M5 KST812M6 m6 marking transistor mark M7 MARKING CODE M6
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA= 2 5t: C haracteristic Sym bol C ollector-B ase Voltage C ollecto r-E m ltte r Voltage E m itter-Base Voltage C ollecto r C urrent C ollecto r D issipation


    OCR Scan     		PDF KST812M3/M4/M5/M6/M7 KST5088 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 KST812M7 marking m3 transistor KST812M3 KST812M4 KST812M5 KST812M6 m6 marking transistor mark M7 MARKING CODE M6

    M6 transistor

    Abstract: KST812M6 sot-23 marking code pe marking M6 transistor M6 Marking pnp M7 marking codes mark M7 m6 marking transistor transistor SOT23 m6 sot-23 Marking M6
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation


    OCR Scan     		PDF KST812M3/M4/M5/M6/M7 KST5088 OT-23 KST812M3 KST812M4 KST812M5 KST812M6 M6 transistor KST812M6 sot-23 marking code pe marking M6 transistor M6 Marking pnp M7 marking codes mark M7 m6 marking transistor transistor SOT23 m6 sot-23 Marking M6

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation


    OCR Scan     		PDF KST812M3/M4/M5/M6/M7 KST5088 KST812M

    1D-S marking

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KST812M3/M4/M5/M6/M7 OT-23 KST5088 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 1D-S marking

    BSS66

    Abstract: cg 5763 BSS66R BSS67R FMMT2369 BFQ31 BSS67 160i BC 5763 BSS69
    Text: i FERRANTI BSS66 BSS67 T IIsemiconductors L NPN Silicon Planar M e d iu m Power S w itc h in g Transistors DESCRIPTION These devices ere intended fo r general purpose switching applications. Com plementary to th e BSS69 and BSS70. Encapsulated in th e popular SOT-23 package, these


    OCR Scan     		PDF BSS66 BSS67 BSS69 BSS70. OT-23 BSS66& BSS67 FMMT2222 FMMT2369A cg 5763 BSS66R BSS67R FMMT2369 BFQ31 160i BC 5763