n50d
Abstract: marking n50d
Text: A Product Line of Diodes Incorporated ZXT13N50DE6 ADVANCE INFORMATION 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 4A Continuous Collector Current ICM = 10A Peak Pulse Current
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ZXT13N50DE6
100mV
AEC-Q101
J-STD-020
DS33636
n50d
marking n50d
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXT13N50DE6 ADVANCE INFORMATION 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • BVCEO > 50V Case: SOT26 IC = 4A Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound
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ZXT13N50DE6
J-STD-020
100mV
DS33636
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Untitled
Abstract: No abstract text available
Text: ZXT13N50DE6 SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 36m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT13N50DE6
OT23-6
OT23-6
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Abstract: ZXT13N50DE6 ZXT13N50DE6TA ZXT13N50DE6TC DSA0037462
Text: ZXT13N50DE6 SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 36m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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Original
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ZXT13N50DE6
OT23-6
OT23-6
n50d
ZXT13N50DE6
ZXT13N50DE6TA
ZXT13N50DE6TC
DSA0037462
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