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    MARKING N6 TRANSISTOR Search Results

    MARKING N6 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    MARKING N6 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DRC4143X Tentative Total pages page DRC4143X Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N6 Package Code : NS-B1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRC4143X

    DRC4143x

    Abstract: No abstract text available
    Text: DRC4143X Tentative Total pages page DRC4143X Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N6 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRC4143X DRC4143x

    DRCF143X

    Abstract: No abstract text available
    Text: DRCF143X Tentative Total pages page DRCF143X Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N6 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRCF143X DRCF143X

    SOT23 W1P

    Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
    Text: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23


    Original     		PDF BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323

    BFG540 N43

    Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes RF Wideband Transistors 1997 Nov 22 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE MARKING CODE


    Original     		PDF BF547 BF547W BF689K BF747 OT323 OT353 OT143 BFG540 N43 w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code

    n7 transistor

    Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23


    Original     		PDF 2SC1654 OT-23 BL/SSSTC096 n7 transistor marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5

    DDTA144ELP

    Abstract: DDTC144ELP DDTC144ELP-7 DFN1006-3 marking K
    Text: DDTC144ELP PRE-BIASED R1=R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DDTA144ELP) Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes


    Original     		PDF DDTC144ELP 100mA DDTA144ELP) AEC-Q101 DFN1006-3 J-STD-020C DS31245 DDTA144ELP DDTC144ELP DDTC144ELP-7 DFN1006-3 marking K

    Untitled

    Abstract: No abstract text available
    Text: DDTC144ELP PRE-BIASED R1=R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DDTA144ELP) Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes


    Original     		PDF DDTC144ELP 100mA DDTA144ELP) AEC-Q101 DFN1006-3 J-STD-020C DS31245

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23


    Original     		PDF 2SC1654 OT-23 BL/SSSTC096

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES  High Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SC1654

    NGA-686

    Abstract: N6 Amplifier marking N6 mmic amplifier marking n6 marking n6 transistor HBT marking P MMIC N6
    Text: Preliminary Preliminary NGA-686 Product Description Sirenza Microdevices’ NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance


    Original     		PDF NGA-686 NGA-686 DC-6000 EDS-101106 N6 Amplifier marking N6 mmic amplifier marking n6 marking n6 transistor HBT marking P MMIC N6

    NGA-686

    Abstract: No abstract text available
    Text: Preliminary NGA-686 Product Description Sirenza Microdevices’ NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance


    Original     		PDF NGA-686 NGA-686 DC-6000 EDS-101106

    Untitled

    Abstract: No abstract text available
    Text: Preliminary NGA-686 Product Description Sirenza Microdevices’ NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance


    Original     		PDF NGA-686 NGA-686 DC-6000 AN-059 EDS-101106

    marking n6 amplifier

    Abstract: SIRENZA MARKING
    Text: Preliminary NGA-689 Product Description Sirenza Microdevices’ NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance


    Original     		PDF NGA-689 NGA-689 DC-5000 AN-059 EDS-101442 marking n6 amplifier SIRENZA MARKING

    NGA-689

    Abstract: 4n63
    Text: Preliminary Preliminary NGA-689 Product Description Sirenza Microdevices’ NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance


    Original     		PDF NGA-689 NGA-689 DC-5000 1950Mhz GaAs522 EDS-101442 4n63

    N6 marking code

    Abstract: marking 210 N6 Amplifier amplifier marking code n6 marking n6 amplifier N6 marking diode MSD601 MSD601-RT1 MSD601-ST1
    Text: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount MSD601–RT1 MSD601–ST1 COLLECTOR 3 3 2 2 BASE 1 EMITTER 1 CASE MAXIMUM RATINGS T A = 25°C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF MSD601 MSD601-RT1 MSD601-ST1 N6 marking code marking 210 N6 Amplifier amplifier marking code n6 marking n6 amplifier N6 marking diode MSD601-RT1 MSD601-ST1

    N6 marking code

    Abstract: marking n6 transistor N6 Amplifier N6 marking diode MSD601 MSD601-RT1 MSD601-ST1 amplifier marking code n6 marking n6
    Text: NPN General Purpose Amplifier Transistors Surface Mount MSD601–RT1 MSD601–ST1 COLLECTOR 3 3 1 2 BASE 1 EMITTER 2 CASE MAXIMUM RATINGS T A = 25°C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current–Continuous


    Original     		PDF MSD601 MSD601-RT1 MSD601-ST1 N6 marking code marking n6 transistor N6 Amplifier N6 marking diode MSD601-RT1 MSD601-ST1 amplifier marking code n6 marking n6

    smd transistor marking n5

    Abstract: smd transistor n6 N5 smd transistor N5 N6 SMD Transistor MARKING SMD TRANSISTOR sot-23 Marking N5 N5 npn transistor pd smd 2SC1654 N7200
    Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC1654 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 High voltage VCEO : 160V +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain.hFE=130 typ. VCE=3.0V,IC=15mA 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF 2SC1654 OT-23 -10mA smd transistor marking n5 smd transistor n6 N5 smd transistor N5 N6 SMD Transistor MARKING SMD TRANSISTOR sot-23 Marking N5 N5 npn transistor pd smd 2SC1654 N7200

    2SC1654

    Abstract: N5 npn transistor n7 transistor 2SC1654N5 marking n5 amplifier sot-23 Marking N5 marking n6 2SC1654N7 amplifier marking code n6 marking n6 transistor
    Text: 2SC1654 0.05A , 180V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE   High Frequency Power Amplifier Application Power Switching Applications A L 3 3


    Original     		PDF 2SC1654 OT-23 2SC1654-N5 2SC1654-N6 2SC1654-N7 18-Feb-2011 2SC1654 N5 npn transistor n7 transistor 2SC1654N5 marking n5 amplifier sot-23 Marking N5 marking n6 2SC1654N7 amplifier marking code n6 marking n6 transistor

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC119S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ・With Built-in Bias Resistors. E B L L ・Simplify Circuit Design. D ・Reduce a Quantity of Parts and Manufacturing Process.


    Original     		PDF KRC119S OT-23

    SOT23 W1P

    Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
    Text: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X


    OCR Scan     		PDF BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 SOT23 W1P BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code

    sot-23 Marking G1

    Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0


    OCR Scan     		PDF OT-23 MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 MMBT5087 MMBT5086 MMBTA42 sot-23 Marking G1 marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C02F h n 3r n i F TOSHIBA TRANSISTOR • ■ ■ SILICON NPN EPITAXIAL PLANAR TYPE 'm mm ■ Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION. TV TUNER, UHF CONVERTER APPLICATION. +0.2 2 .8 - 0.3 • • +0.2 1.6-0.1 Including Two Devices in SM6 Super Mini Type with 6Leads


    OCR Scan     		PDF HN3C02F --2400MHz 800MHz --30MHz 30MHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C03F TOSHIBA TRANSISTOR hn SILICON NPN EPITAXIAL PLANAR TYPE • 'm ■ ■ 3 mm r n3 F ^ur v ■ Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION. TV TUNER, UHF CONVERTER APPLICATION. +0.2 2 .8 - 0.3 • • +0.2 1.6-0.1 Including Two Devices in SM6 Super Mini Type with 6Leads


    OCR Scan     		PDF HN3C03F 30MHz --10V, 30MHz