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    MARKING QG 6 PIN Search Results

    MARKING QG 6 PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    MARKING QG 6 PIN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SMK1265

    Abstract: SMK1265F 12A 650V MOSFET 43nC
    Text: SMK1265F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=14.6pF(Typ.) Low gate charge : Qg=43nC(Typ.) Low RDS(on) : RDS(on)=0.8Ω(Max.) D G Ordering Information


    Original     		SMK1265F SMK1265 O-220F-3L SDB20D45 KSD-T0O039-002 SMK1265 SMK1265F 12A 650V MOSFET 43nC PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 500 V RDS(on) (max) 1.4 Ω Qg 25 nC TO-252 (DPAK) Features Block Diagram ● Low RDS(ON) 1.4Ω (Max.)


    Original     		TSM6N50 ITO-220 O-251 O-252 TSM6N50CI 50pcs TSM6N50CP TSM6N50CH PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		TSM70N900 ITO-220 O-251 O-252 TSM70N900CI 50pcs TSM70N900CH 75pcs PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		TSM70N600 ITO-220 O-251 O-252 TSM70N600CI 50pcs TSM70N600CH 75pcs PDF

    TSM60N600CP

    Abstract: No abstract text available
    Text: TSM60N600 600V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.6 Ω Qg 13 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		TSM60N600 ITO-220 O-251 O-252 TSM60N600CI 50pcs TSM60N600CH 75pcs TSM60N600CP PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM70N380 700V, 11A, 0.38Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.38 Ω Qg 19.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		TSM70N380 ITO-220 O-251 O-252 TSM70N380CI 50pcs TSM70N380CH 75pcs PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		TSM60N900 ITO-220 O-251 O-252 TSM60N900CI 50pcs TSM60N900CH 75pcs PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 800 V RDS on (max) 1.05 Ω Qg 53 nC Features Block Diagram ● Low RDS(ON) 1.05Ω (Max.) ● Low gate charge typical @ 53nC (Typ.)


    Original     		TSM10N80 O-220 ITO-220 50pcs TSM10N80CZ TSM10N80CI 900ppm PDF

    Untitled

    Abstract: No abstract text available
    Text: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.


    Original     		MIXA150W1200TEH E72873 20110510b PDF

    diode n04

    Abstract: No abstract text available
    Text: MIXA40W1200TED Six-Pack XPT IGBT VCES = 1200 V IC25 = 60 A VCE sat = 1.8 V Part name (Marking on product) MIXA40W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 NTC 23, 24 21, 22 19, 20 E 72873 18 3 4 7 11 8 12 Pin configuration see outlines. 13, 14 27, 28 Features:


    Original     		MIXA40W1200TED 20100622c diode n04 PDF

    MIXA100W1200TEH

    Abstract: IXYS DATE CODE
    Text: MIXA100W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA100W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.


    Original     		MIXA100W1200TEH E72873 an1200 20110505a MIXA100W1200TEH IXYS DATE CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: MIXA60W1200TED Six-Pack XPT IGBT VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA60W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 23, 24 21, 22 19, 20 NTC E 72873 18 3 4 Pin coniguration see outlines. 7 11 8 12 13, 14


    Original     		MIXA60W1200TED diod00 20100622c PDF

    MIXA30W1200TED

    Abstract: No abstract text available
    Text: MIXA30W1200TED Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 23, 24 21, 22 19, 20 NTC E 72873 18 3 4 Pin coniguration see outlines. 7 11 8 12 13, 14 27, 28 Features:


    Original     		MIXA30W1200TED soft00 20100622b MIXA30W1200TED PDF

    MIXA40W1200TMH

    Abstract: E72873 MiniPack2
    Text: MIXA40W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 60 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA40W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required


    Original     		MIXA40W1200TMH 20091207a MIXA40W1200TMH E72873 MiniPack2 PDF

    MIXA30W1200TMH

    Abstract: E72873
    Text: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA30W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required


    Original     		MIXA30W1200TMH 20091214a MIXA30W1200TMH E72873 PDF

    TSM7N65A

    Abstract: No abstract text available
    Text: TSM7N65A 650V N-Channel Power MOSFET ITO-220 Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 650 V RDS on (max) 1.45 Ω Qg 27.8 nC Block Diagram Features ● Low RDS(ON) 1.2Ω (Typ.) ● ● ● Low gate charge typical @ 27.8nC (Typ.)


    Original     		TSM7N65A ITO-220 50pcs TSM7N65ACI TSM7N65A PDF

    Untitled

    Abstract: No abstract text available
    Text: MWI 35-12T7T IC25 = 60 A VCES = 1200 V VCE sat typ. = 1.7 V Six-Pack Trench฀IGBT Part name (Marking on product) MWI 35-12T7T 15, 16 25, 26 17 1 5 9 2 6 10 23, 24 21, 22 19, 20 NTC 18 E72873 Pin configuration see outlines. 3 4 7 11 8 12 13, 14 27, 28 Features:


    Original     		35-12T7T E72873 P1209c /-15V, 20081209c PDF

    auk stk0765

    Abstract: STK0765 STK0765F Advanced Power MOSFET KST-H038-000
    Text: STK0765F Semiconductor Advanced Power MOSFET Features • Low Crss • Low gate charge. • HIGH BVDSS • Low leakage current Ordering Information Type NO. STK0765F Marking STK0765 Outline Dimensions Package Code TO-220F unit : mm PIN Connections 1. Gate


    Original     		STK0765F STK0765 O-220F KST-H038-000 auk stk0765 STK0765 STK0765F Advanced Power MOSFET KST-H038-000 PDF

    N-Channel

    Abstract: No abstract text available
    Text: TSM042N03CS 30V N-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 8. 2. Source 7. 3. Source 6. 4. Gate 5. Key Parameter Performance Drain Drain Drain Drain Parameter Value Unit VDS 30 V RDS on (max) VGS = 10V 4.2 VGS = 4.5V 6 Qg 24 nC Block Diagram Ordering Information


    Original     		TSM042N03CS TSM042N03CS 900ppm 1500ppm 1000ppm N-Channel PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM058N06PQ56 60V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 60 V RDS on (max) 5.8 mΩ Qg 118 nC Features Block Diagram ● Low On-Resistance


    Original     		TSM058N06PQ56 PDFN56 TSM058N06PQ56 900ppm 1500ppm 1000ppm PDF

    Untitled

    Abstract: No abstract text available
    Text: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required


    Original     		MIXA30W1200TMH 20101102b PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM070N07PQ56 65V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 65 V RDS on (max) 7 mΩ Qg 125 nC Features ● ● ● Block Diagram Low On-Resistance


    Original     		TSM070N07PQ56 PDFN56 TSM070N07PQ56 900ppm 1500ppm 1000ppm PDF

    Untitled

    Abstract: No abstract text available
    Text: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin coniguration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required


    Original     		MIXA30W1200TMH 20101102b PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF7425PbF-1 HEXFET Power MOSFET VDS -20 RDS on max V 1 8 S 2 7 D S 3 6 D G 4 5 D 8.2 (@VGS = -4.5V) mΩ RDS(on) max 13 (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) 87 nC -15 A Package Type IRF7425PbF-1 SO-8 SO-8 Top View Features Industry-standard pinout SO-8 Package


    Original     		IRF7425PbF-1 IRF7425Pefer D-020D PDF