C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
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1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking JY sot-23
Abstract: sot-23 Marking 3D BAT34 LV4, SMD SOT-346 sot-23 Marking B1 SR715F SMD23 bat54 sot-323 B4 SOD-123
Text: E L E C T R O N I C Device Marking of Surface Mount Schottky July 2007 /Rev. 1 Part Number Package Marking Part Number Package Marking SR520G-30 SOD-723 2 SR651H-40 SOD-323 JT SR521G-30 SOD-723 3 BAT54T SOT-416 TS SR751G-40 SOD-723 5 BAT54TA SOT-416 TT SR501G-40
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SR520G-30
OD-723
SR651H-40
OD-323
SR521G-30
BAT54T
OT-416
SR751G-40
marking JY sot-23
sot-23 Marking 3D
BAT34
LV4, SMD
SOT-346
sot-23 Marking B1
SR715F
SMD23
bat54 sot-323
B4 SOD-123
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OCR Scan
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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PDF
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Philips MARKING CODE
Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked
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Original
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OT143,
OT323,
OT343,
OT363,
OD110,
OD323
OD523
BF992
PMBF4416A
BF510
Philips MARKING CODE
Datasheets for BB132 varicap
marking code W1
BAT18 A2p
sot143 marking code A5
Marking codes
sot143 marking code A3
marking A5 sot363
marking W1
S13 SOT363
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BSS159N
Abstract: E6327 SOT-23 marking j25 D007
Text: BSS159N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 60 V R DS on ,max 8 Ω I DSS,min 0.13 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS159N SOT-23 Q67042-S1488
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BSS159N
OT-23
Q67042-S1488
E6327:
BSS159N
E6327
SOT-23 marking j25
D007
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PDF
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marking d007 sot23
Abstract: No abstract text available
Text: BSS159N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 60 V R DS on ,max 8 Ω I DSS,min 0.13 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS159N 0) SOT-23 Q62702-S1488
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Original
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BSS159N
OT-23
BSS159N
OT-23
Q62702-S1488
Q67042-S4293
E6327:
E6906:
marking d007 sot23
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PDF
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3 pin capacitor
Abstract: B41538-A7338-M S14 K 75 CAPACITOR B41538-A7228-M MARKING 11 3PIN
Text: Aluminum Electrolytic Capacitors 3-pin capacitor Long-life grade For switch-mode power supplies with high clock frequencies Very low self-inductance Very high current handling capability despite small size; high reliability 35 î 2V Marking ol negative pole
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OCR Scan
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B41538-A7228-M
B41538-A7338-M
B41538-A8228-M
B41538-A8338-M
3 pin capacitor
S14 K 75 CAPACITOR
MARKING 11 3PIN
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PDF
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s10p40
Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge
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Original
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OD-123
S30S20PT
S30S30PT
S30S35PT
s10p40
C53l
SS34 sma
SS54 smb
K4 SOD
SK24 equivalent
SK34 smc
diode s14L
SSM14APT
SSM5819SLPT
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PDF
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marking ss14
Abstract: ss14 do-214ac SS14 marking SS15 sma ss14 sma SS15 SS16 ss12 marking ss14 do-214ac sma SS13
Text: LESHAN RADIO COMPANY, LTD. SS12 – SS16 1A 1A SCHOTTKY SMA DIODES TYPE Marking SS12 SS13 SS14 SS15 SS16 20 30 40 50 60 S12 S13 S14 S15 S16 V F V IF (A) VRRM(V) 0.50 0.50 0.50 0.70 0.70 1.0 IRMI(µA) IP8M(A) 1000 Package Dimensions Trr(ns) – – – –
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Original
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214AC
-SS15
50mVp-p
marking ss14
ss14 do-214ac
SS14
marking SS15 sma
ss14 sma
SS15
SS16
ss12 marking
ss14 do-214ac sma
SS13
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PDF
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Untitled
Abstract: No abstract text available
Text: S14C03-8 THRU S14C24-8 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0287, Rev. - MARKING DIAGRAM Where XXXXX is YYWWL S14C12-8 S YY WW L = Part Name =S = Year = Week = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 86 25-87123907 •
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S14C03-8
S14C24-8
N0287,
S14C12-8
S14C03-8
SO-14
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PDF
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s10p40
Abstract: SCM54 SCM35 SBM19 SCM84 SSM19 SCM32 Ssm34 SBM14 SSM35
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Current Voltage Surge Current Outline @ 25°C TA @ 25°C TA @ 8.3mS NO. IR IFM VFM IFM Surge Adc APK
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Original
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OD-123
S15P20
S15P30
S15P40
s10p40
SCM54
SCM35
SBM19
SCM84
SSM19
SCM32
Ssm34
SBM14
SSM35
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PDF
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Untitled
Abstract: No abstract text available
Text: DN4 Diode Termination Network / ESD Suppressor Schematic 4 3 1 2 Package SOT-143 Marking “ DN4 “ o Absolute Maximum Ratings: ( Ta = 25 C ) Symbol Parameter Value Units TJ Operating Temperature -40 to +85 C WV Supply Voltage 8 V IF DC Forward Current
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Original
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OT-143)
OT143
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PDF
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s149
Abstract: transistor Siemens 14 S S 92
Text: SIEMENS SIPMOS Small-Signal Transistor • • • • • • • B SS 149 Vos 200 V ID 0.35 A ^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Inform ation PinC onfigu ration Marking
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OCR Scan
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E6325:
SS149
Q62702-S623
Q67000-S252
s149
transistor Siemens 14 S S 92
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PDF
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Elpida LPDDR2 Memory
Abstract: MT46H32M32LF MT46H64M16LF
Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks
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MT46H64M16LF
MT46H32M32LF
09005aef82ce3074
Elpida LPDDR2 Memory
MT46H32M32LF
MT46H64M16LF
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PDF
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Untitled
Abstract: No abstract text available
Text: M ir -r a r n iS J I ^ MT2D T 132 e, MT4D232 B, MT8D432 B 1, 2, 4 MEG X 32 DRAM MODULES 1,2, 4 MEG X 32 DRAM MODULE 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES OPTIONS PIN ASSIGNMENT (Front View) 72-Pin SIMM (DD-11) (DD-9) (DD-8) (DD-3) MARKING • Timing 52ns access; 15ns cycle
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OCR Scan
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MT4D232
MT8D432
72-Pin
DD-11)
0D13bBl
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PDF
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TZP27B
Abstract: TZP33A tzp 33a zp 33a TZP10A zener 1n 4148 957B R 958B zener 56c marking CODE S139
Text: Part Marking <Switching D io d e s <Rectifier D io d e s) DO-35 GSD) DO-34<MSO) u§p Part No. M arking Part No. M arking P art No. M arking P art No. White 1S S130 White 1S2471 Black 1SS131 Black 1 S S 252 Black 1S 2472 Green 1S S132 Green 1S S253 Green 1S 24 73
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OCR Scan
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DO-35
1SS41
DO-34
1S2471
1SS131
B100A
TZP27B
TZP33A
tzp 33a
zp 33a
TZP10A
zener 1n 4148
957B
R 958B
zener 56c
marking CODE S139
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PDF
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARYD ecem ber 1995 Edition 2.1 FUJITSU _ P R O D U C T P R O F IL E S H E E T : MB81G83222-010/-012/-015 CMOS 2 X 128K X 3 2 SYNCHRONOUS GRAM CMOS 2 BANKS OF 131,072-WORDS x 32-BIT SYNCHRONOUS GRAPHIC RANDOM ACCESS MEMORY Marking side The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory
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OCR Scan
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MB81G83222-010/-012/-015
072-WORDS
32-BIT
MB81G83222
32-bit
374175b
MB81G83222-010
MB81G83222-012
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PDF
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ELPIDA mobile dram LPDDR2
Abstract: LPDDR2 SDRAM micron infineon power cycling
Text: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks Features Marking Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 16 Meg x 16 4 Meg x 16 x 4 banks – 8 Meg x 32 (2 Meg x 32 x 4
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256Mb:
MT46H16M16LF
MT46H8M32LF
09005aef834bf85b
ELPIDA mobile dram LPDDR2
LPDDR2 SDRAM micron
infineon power cycling
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PDF
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34SH0200X
Abstract: 11099273 E315836 34SH0500X
Text: Inductive sensors IWRM 12I9704/S14X Inductive linear sensors dimension drawing 50 SW 17 35 M12 x 1 M12 x 1 general data photo mounting type quasi-flush measuring distance Sd 0 . 4 mm resolution repeat accuracy < 0,001 mm stat. < 0,005 mm (dynam.)
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12I9704/S14X
E315836
34SH0200X
34SH0300X
34SH0500X
34SH1000X
34SH2000X
33SH0200X
33SH0500X
33SH0600X
11099273
E315836
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PDF
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Untitled
Abstract: No abstract text available
Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v00.0902 S14 E – 14 LEAD PLASTIC SOIC PACKAGE PACKAGE OUTLINES S14 (E) Package Outline Drawing
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PDF
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Untitled
Abstract: No abstract text available
Text: S14C03-8 thru S14C24-8 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1915, REV. - TVS ARRAY SERIES FEATURES ü ü ü ü ü ü SO-16 Protects 3.3, 5, 12, 15, 24 V Components Bidirectional Provides Electrically Isolated Protection 300 W @ 8/20 µs Protects 8 Lines
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Original
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S14C03-8
S14C24-8
SO-14
SO-16
S14CXX-8
RS-232,
RS-422,
RS-423
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PDF
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Untitled
Abstract: No abstract text available
Text: 140MHz SAW Filter 3.2MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. S140A76 Part Number:LB Number:LBS140A76 www.sipatsaw.com Features � For IF SAW filter � High attenuation � Single-ended operation
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140MHz
LBS140A76
2002/95/EC)
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PDF
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