1PS89SS04
Abstract: 1PS89SS05 1PS89SS06
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SS04/05/06 High-speed double diodes Preliminary specification 1998 Oct 30 Philips Semiconductors Preliminary specification High-speed double diodes 1PS89SS04/05/06 MARKING FEATURES • Improved power dissipation in
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M3D425
1PS89SS04/05/06
1PS89SS04
1PS89SS05
1PS89SS06
1PS89SS04/05/06
1PS89SS.
SCA60
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CH-8050
Abstract: dli personal line IEEE695 R3000 R3051 R3052 R3081 R4000 R4400 R4700
Text: Logic Analyzers DLI Personal Line Flexible Logic Analyzer Family for the Windows Operating System Features ❏ Disassemblers without the need of preprocessor hardware for reverse assembly of processor-code with detection and marking of jumps and non executed instructions.
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ca777-9842
171st
CH-8050
dli personal line
IEEE695
R3000
R3051
R3052
R3081
R4000
R4400
R4700
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dli personal line
Abstract: R3052 CH-8050 IEEE695 R3000 R3051 R3081 R4000 R4400 R4700
Text: Logic Analyzers DLI Personal Line Flexible Logic Analyzer Family for the Windows Operating System Features ❏ Disassemblers without the need of preprocessor hardware for reverse assembly of processor-code with detection and marking of jumps and non executed instructions.
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ca777-9842
171st
dli personal line
R3052
CH-8050
IEEE695
R3000
R3051
R3081
R4000
R4400
R4700
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s10p40
Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge
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OD-123
S30S20PT
S30S30PT
S30S35PT
s10p40
C53l
SS34 sma
SS54 smb
K4 SOD
SK24 equivalent
SK34 smc
diode s14L
SSM14APT
SSM5819SLPT
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marking ss14
Abstract: ss14 do-214ac SS14 marking SS15 sma ss14 sma SS15 SS16 ss12 marking ss14 do-214ac sma SS13
Text: LESHAN RADIO COMPANY, LTD. SS12 – SS16 1A 1A SCHOTTKY SMA DIODES TYPE Marking SS12 SS13 SS14 SS15 SS16 20 30 40 50 60 S12 S13 S14 S15 S16 V F V IF (A) VRRM(V) 0.50 0.50 0.50 0.70 0.70 1.0 IRMI(µA) IP8M(A) 1000 Package Dimensions Trr(ns) – – – –
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214AC
-SS15
50mVp-p
marking ss14
ss14 do-214ac
SS14
marking SS15 sma
ss14 sma
SS15
SS16
ss12 marking
ss14 do-214ac sma
SS13
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Untitled
Abstract: No abstract text available
Text: S16LC03-8 THRU S16LC24-8 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0288, Rev. - MARKING DIAGRAM Where XXXXX is YYWWL S16LC03-8 = Part Name S =S YY = Year WW = Week L = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 86 25-87123907 •
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S16LC03-8
S16LC24-8
N0288,
S16LC03-8
SO-16
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Untitled
Abstract: No abstract text available
Text: S16LCC03-8 THRU S16LCC24-8 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0290, Rev. A MARKING DIAGRAM Where XXXXX is YYWWL S16LCC03-8 S YY WW L = Part Name =S = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 86 25-87123907 •
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S16LCC03-8
S16LCC24-8
N0290,
SO-16
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Untitled
Abstract: No abstract text available
Text: S1603-8 THRU S1624-8 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0293, Rev. - MARKING DIAGRAM Where XXXXX is YYWWL S1603-8 S YY WW L = Part Name =S = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 86 25-87123907 •
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S1603-8
S1624-8
N0293,
S1603-8
SO-16
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Untitled
Abstract: No abstract text available
Text: S16C03-8 THRU S16C24-8 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0289, Rev. - MARKING DIAGRAM Where XXXXX is YYWWL S16C03-8 S YY WW L = Part Name =S = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 86 25-87123907 •
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S16C03-8
S16C24-8
N0289,
S16C03-8
SO-16
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s10p40
Abstract: SCM54 SCM35 SBM19 SCM84 SSM19 SCM32 Ssm34 SBM14 SSM35
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Current Voltage Surge Current Outline @ 25°C TA @ 25°C TA @ 8.3mS NO. IR IFM VFM IFM Surge Adc APK
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OD-123
S15P20
S15P30
S15P40
s10p40
SCM54
SCM35
SBM19
SCM84
SSM19
SCM32
Ssm34
SBM14
SSM35
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marking code 11 dfn
Abstract: S17 SMD OCXO S15
Text: SURFACE MOUNT MINIATURE PRECISION OSCILLATOR DFN S2-LE LVPECL & DFN S2-LL (LVDS) 7.2±0.2 KEY FEATURES 5.08 Marking: 5.3±0.1 16 to 213 MHz ± 20 ppm/10 years stability available DFN S2-LEC/LL Frequency Code yrwk 1 ps RMS jitter over 50 kHz to 80 MHz B.W.
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ppm/10
J-STD-020C
marking code 11 dfn
S17 SMD
OCXO S15
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FORDAHL Frequency Control Products
Abstract: OCXO S15 SMD 5 PIN CODE leg KEC DATE code marking s17 DFN MARKING 352 max 14803 KEC MARKING CODE kec smd marking S17 SMD MARKING CODE
Text: SURFACE MOUNT PRECISION OSCILLATOR DFN S1-KEC/KEG 5 V & DFN S1-LEC/LEG (3.3 V) 14.8±0.3 KEY FEATURES Marking: 5.08 ± 20 ppm/15 years stability available KEC/LEC version: 1.4 9.1±0.2 16 to 400 MHz 1 ps RMS jitter over 50 kHz to 80 MHz B.W. +0.1 -0.2 1.0
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ppm/15
J-STD-020C
FORDAHL Frequency Control Products
OCXO S15
SMD 5 PIN CODE leg
KEC DATE code
marking s17
DFN MARKING 352
max 14803
KEC MARKING CODE
kec smd marking
S17 SMD MARKING CODE
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Elpida LPDDR2 Memory
Abstract: MT46H32M32LF MT46H64M16LF
Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks
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MT46H64M16LF
MT46H32M32LF
09005aef82ce3074
Elpida LPDDR2 Memory
MT46H32M32LF
MT46H64M16LF
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ELPIDA mobile dram LPDDR2
Abstract: LPDDR2 SDRAM micron infineon power cycling
Text: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks Features Marking Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 16 Meg x 16 4 Meg x 16 x 4 banks – 8 Meg x 32 (2 Meg x 32 x 4
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256Mb:
MT46H16M16LF
MT46H8M32LF
09005aef834bf85b
ELPIDA mobile dram LPDDR2
LPDDR2 SDRAM micron
infineon power cycling
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Untitled
Abstract: No abstract text available
Text: S1632 Series 1.8V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 3.2 x 5mm Product Features Pin Functions Packaging Outline • Less than 1.5 ps RMS jitter with fundamental or overtone design • 1.8V CMOS compatible logic levels • Pin-compatible with standard 3.2x5mm packages
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S1632
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s1632
Abstract: E 32.0000 C 1632 32.0000
Text: S1632 Series 1.8V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 3.2 x 5mm Product Features Pin Functions Packaging Outline • Less than 1.5 ps RMS jitter with fundamental or overtone design • 1.8V CMOS compatible logic levels • Pin-compatible with standard 3.2x5mm packages
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S1632
E 32.0000 C
1632 32.0000
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E 32.0000 C
Abstract: S1614 Saronix 32 MHz crystal D0208
Text: S1614 Series 2.5V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 5 x 7mm Pin Functions Packaging Outline Product Features • Less than 1.5 ps RMS jitter with fundamental or overtone design • 2.5V CMOS compatible logic levels • Pin-compatible with standard 5x7mm packages
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S1614
E 32.0000 C
Saronix 32 MHz crystal
D0208
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saronix 106.2500
Abstract: Saronix 32 MHz crystal Saronix 48 MHz crystal E 32.0000 C S1634 marking s4x
Text: S1634 Series 2.5V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 3.2 x 5mm Pin Functions Packaging Outline Product Features • Less than 1.5 ps RMS jitter with fundamental or overtone design • 2.5V CMOS compatible logic levels • Pin-compatible with standard 3.2x5mm packages
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S1634
saronix 106.2500
Saronix 32 MHz crystal
Saronix 48 MHz crystal
E 32.0000 C
marking s4x
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Untitled
Abstract: No abstract text available
Text: S1615 Series 5V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 5 x 7mm Pin Functions Packaging Outline Product Features Pin Function • Pin-compatible with standard 5x7mm packages 1 OE Function • Designed for standard reflow and washing techniques
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S1615
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION, COMPANY CONFIDENTIAL S1632 Series 1.8V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 3.2 x 5mm Product Features Pin Functions Packaging Outline • Less than 1.5 ps RMS jitter with fundamental or overtone design • 1.8V CMOS compatible logic levels
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S1632
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
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PDF
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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1PS89SS04
Abstract: 1PS89SS05 1PS89SS06 SOT49
Text: DISCRETE SEMICONDUCTORS [Mm S^EET 1PS89SS04/05/06 High-speed double diodes P relim inary specification Philips Semiconductors 1998 Oct 30 PHILIPS Philips Semiconductors Preliminary specification High-speed double diodes FEATURES 1PS89SS04/05/06 MARKING • Improved power dissipation in
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OCR Scan
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PDF
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1PS89SS04/05/06
1PS89SS04/05/06
1PS89SS04
1PS89SS05
1PS89SS06
1PS89SS.
SCA60
SOT49
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GPI048
Abstract: upd3 PD30111
Text: ¿¿PD30111 NEC 23. ELECTRICAL SPECIFICATIONS This section shows the electrical specifications of versions 1.1 and 2.0 of the V r41 11. The revision is identified by the marking in the top of the package. 23.1 Version 1.1 Absolute Maximum Ratings T a = 25°C
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OCR Scan
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uPD30111
ns/20
GPI048
upd3
PD30111
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marking D76
Abstract: No abstract text available
Text: D IO D E S SOT-23/TO-236AB ‘TMPD’ GENERAL-PURPOSE DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type Description •f v BR Min. Max. Marking Max. mA (V) 5D 600 100 T M P D 9 14 G e n e ral-P u rpo se TM P D 4 14 8 G e n e ral-P u rpo se 5D
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OCR Scan
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PDF
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OT-23/TO-236AB
BAV74
marking D76
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