Si2301DS
Abstract: No abstract text available
Text: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301DS
O-236
OT-23)
S-58543--Rev.
20-Jul-98
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Si2301DS
Abstract: vishaysiliconix
Text: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301DS
O-236
OT-23)
S-58543--Rev.
20-Jul-98
vishaysiliconix
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PDF
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Si2308DS
Abstract: No abstract text available
Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V "2.0 0.22 @ VGS = 4.5 V "1.7 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2308DS
O-236
OT-23)
S-58492--Rev.
15-June-98
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PDF
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SI2301DS
Abstract: No abstract text available
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2301DS
O-236
OT-23)
S-58543--Rev.
20-Jul-98
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S19 SMA MARKING
Abstract: BL s17 S5818 S5817 S5819 marking s17 S19 MARKING
Text: BL GALAXY ELECTRICAL S5817- - -S5819 VOLTAGE RANGE: 20 - 40 V CURRENT: 1.0 A SCHOTTKY BARRIER RECTIFIER FEATURES SMA DO-214AC Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability
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S5817-
-S5819
DO-214AC)
DO--214AC
STD-202
50mVp-p
S19 SMA MARKING
BL s17
S5818
S5817
S5819
marking s17
S19 MARKING
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION SaRonix TCVCXO 5V, Sub-miniature SMD Technical Data S5800 Series Frequency: 13.0000 MHz Frequency Stability: vs. vs. vs. vs. temperature: ±2.5 ppm max supply voltage: ±0.3 ppm max aging: ±1 ppm max per year load: ±0.3 ppm max, CL: [10kΩ//10 pF] ±10%
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S5800
10k//10
DS-220
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S5800
Abstract: DS220
Text: ADVANCE INFORMATION SaRonix TCVCXO 5V, Sub-miniature SMD Technical Data S5800 Series Frequency: 12.8000, 13.0000, 14.4000, 19.6800 MHz Frequency Stability: vs. temperature: ±2.5 ppm max vs. supply voltage: ±0.3 ppm max vs. aging: ±1 ppm max per year ±9ppm max for 10 years
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S5800
DS-220
DS220
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Untitled
Abstract: No abstract text available
Text: SaRonix TCVCXO 5V, Sub-miniature SMD Technical Data S5800 Series Frequency: 12.8000, 13.0000, 14.4000, 19.6800 MHz Frequency Stability: vs. temperature: ±2.5 ppm max vs. supply voltage: ±0.3 ppm max vs. aging: ±1 ppm max per year ±9ppm max for 10 years
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S5800
DS-220
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Untitled
Abstract: No abstract text available
Text: R15S 0805 S-Series, Low ESR Capacitor Multi-Layer High-Q Features • Standard EIA Size: 0805 • Ultra-small 0201 package size • Capacitance Range 0.3 - 220 pF • RF Power Application • Lowest ESR in Class • Ultra-high Q performance • High Self-Resonance Frequencies
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30ppm
0402/R07S
150-250MHz
900-1000MHz
1900-2000MHz
2100-2250MHz
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Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Super Fast Rectifiers Rectifier SFM51 THRU SFM58 List List. 1 Package outline. 2
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SFM51
SFM58
MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
METHOD-4066-2
1000hrs.
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Marking S58
Abstract: S58E 222 500V
Text: E-SERIES POWER Q CAPACITORS The E-Series was developed for HF to UHF frequency communication, transmission and specialized applications military, civil, medical, etc. where low loss, high current, high voltage capabilities are required. The high purity Type 1 dielectric
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222 500V
Abstract: No abstract text available
Text: E-SERIES POWER Q CAPACITORS The E-Series was developed for HF to UHF frequency communication, transmission and specialized applications military, civil, medical, etc. where low loss, high current, and high voltage capabilities are required. The high purity Type 1 dielectric material and special electrode construction make them
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6092A
8720C
222 500V
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Untitled
Abstract: No abstract text available
Text: SMAJ 5.0A ~ 188CA SURFACE MOUNT BI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage : 5.0 to 188V Peak Pulse Power : 400 W SMA DO-214AC * 400W surge capability at 1ms * Optimized for LAN protection applications * Excellent clamping capability * Low zener impedance
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188CA
DO-214AC)
UL94V-O
SMAJ78CA
SMAJ85A
SMAJ188CA
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diode s526
Abstract: S514 S088 S57A S563 S58C S513 marking S063 S0B4 S571
Text: SMAJ 5.0 ~ 170A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VBR : 6.8 - 200 Volts PPK : 400 Watts SMA DO-214AC FEATURES : 5.0 ± 0.15 4.5 ± 0.15 1.1 ± 0.3 * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less
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DO-214AC)
UL94V-O
diode s526
S514
S088
S57A
S563
S58C
S513 marking
S063
S0B4
S571
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Untitled
Abstract: No abstract text available
Text: SMAJ 5.0 ~ 188A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage : 5.0 to 188V SMA DO-214AC Peak Pulse Power : 400 W * 400W surge capability at 1ms * Optimized for LAN protection applications * Excellent clamping capability * Low zener impedance
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Original
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DO-214AC)
UL94V-O
SMAJ78A
SMAJ85
SMAJ188A
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2450BM15A0002
Abstract: 5400BL15B100 2450BM14A0002 microwave product 2450AT42A100 STLC2690 inductor marking Johanson Technology 2450FB15L0001 bluetooth BC05 5400BL15B050
Text: CH EA ce /R lian HSmp Ro Co High Frequency Ceramic Solutions Antennas 88 MHz-10 GHz Baluns Capacitors (Hi Q, Low Loss) Chipset-Specific Impedance Matched Balun-Filters Couplers Diplexers Filters (Band-Pass, Low-Pass, etc) Inductors (Wirewound & Monolithic)
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Hz-10
2450BM15A0002
5400BL15B100
2450BM14A0002
microwave product
2450AT42A100
STLC2690
inductor marking
Johanson Technology 2450FB15L0001
bluetooth BC05
5400BL15B050
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S42E
Abstract: R03S S48E 7200 b
Text: Multi-Layer High-Q Capacitors These lines of multilayer capacitors have been developed for High-Q and microwave applications. • The S-Series R03S, R07S, R14S, R15S capacitors give an ultra-high Q performance, and exhibit NP0 temperature characteristics.
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8720C
6092A
S42E
R03S
S48E
7200 b
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2525-size
Abstract: No abstract text available
Text: Multi-Layer High-Q Capacitors These lines of multilayer capacitors have been developed for High-Q and microwave applications. • The S-Series R03S, R07S, R14S, R15S capacitors give an ultra-high Q performance, and exhibit NP0 temperature characteristics.
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6092A
2525-size
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PDF
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU580Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU580Q
BFU580Q
AEC-Q101
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2n2 j100
Abstract: No abstract text available
Text: CH EA ce /R lian on iti HSmp Ro Co Ed 12 20 High Frequency Ceramic Solutions Antennas 88 MHz-10 GHz Baluns Capacitors (Hi Q, Low Loss) Chipset-Specific Impedance Matched Balun-Filters Couplers Diplexers Filters (Band-Pass, Low-Pass, etc) Inductors (Wirewound & Monolithic)
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Hz-10
2n2 j100
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Untitled
Abstract: No abstract text available
Text: Si2308DS VISHAY Siliconix ▼ N-Channel 60-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „s (V) RDS(ON) (-3) lD (A) 0.16 @ V GS = 10 V ±2 .0 0.22 @ VGS = 4.5 V ±1 .7 60 TO-236 (SOT-23) *Marking Code A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )
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OCR Scan
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Si2308DS
O-236
OT-23)
S-58492â
15-June-98
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PDF
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sec 222M se
Abstract: sec 472m sf sec 222m sf sec+472M+sf
Text: Radial Leaded Capacitors Disc Ceramic Comfanaaiiy Coated Y Style Line to Cround Suppressor Physical Dielectric Material Electrode Material Termination Material Enclosure Test Classification • • • • ceramic silver Tinned copper leads Blue, flame retardant UL94VO
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OCR Scan
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UL94VO)
sec 222M se
sec 472m sf
sec 222m sf
sec+472M+sf
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PDF
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EC2 WS-501
Abstract: WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 WS-20130
Text: lowprofile Wee SIP LUMPED CONSTANT SIVE DELAY LINE J # # # # # # Analog input and output D elays stable and precise 3-pin Wee S IP package .1 8 0 high Available in delays from 1ns to 2 5 0 n s Precise, fixed delay Available in im pedances of 5 0 , 1 0 0 , 2 0 0 ,
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OCR Scan
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250ns
250ns.
WS-20110
WS-20120
WS-20130
WS-20140
WS-20150
WS-20160
WS-201
EC2 WS-501
WS-1080
ws353
WS-1070
WS-2028
WS-516
WS-3507
WS-3510
WS-3570
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PDF
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S5007
Abstract: S5008 S5006 WS-518 S-5028 WS353 WS-3522 s20230 S10120 S3505
Text: lowprofile Wee SIP LUMPED CONSTANT PASSIVE DELAY LINE J # Analog input and output # Delays stable and precise use in providing the required delay timing functions necessary in radar, computer, communication, testing and instrument applica tions. # 3-pin Wee SIP package .1 8 0 high
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OCR Scan
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250ns
MIL-HDBK-21
MIL-M-14,
C/030386R
S5007
S5008
S5006
WS-518
S-5028
WS353
WS-3522
s20230
S10120
S3505
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