electronic ballast with npn transistor
Abstract: No abstract text available
Text: FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol
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FJD5553
J5553
electronic ballast with npn transistor
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j555
Abstract: marking A1 TRANSISTOR FJD5553 FJD5553TM J5553 electronic ballast with npn transistor
Text: FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol
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FJD5553
J5553
FJD5553
j555
marking A1 TRANSISTOR
FJD5553TM
J5553
electronic ballast with npn transistor
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J5555
Abstract: J555 FJD5555 FJD5555TM
Text: FJD5555 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol
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FJD5555
J5555
FJD5555
J5555
J555
FJD5555TM
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marking code vishay SILICONIX
Abstract: 45N05-20 dpak code Siliconix 45n0520l TO252-DPAK 45n05 marking t Marking transistor TO252
Text: Part Marking Information Vishay Siliconix DEVICES: REVERSE TO-252 DPAK Reverse TO-252 45N0520L TYWFLL Example Part Numbers In Red Type = ESD Symbol = Lot Code = Siliconix Logo T = Assembly Factory Code Y = Year Code W = Week Code F = Wafer Fab Code f = Mold Dimple
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O-252
45N0520L
22-Apr-04
marking code vishay SILICONIX
45N05-20
dpak code
Siliconix
45n0520l
TO252-DPAK
45n05
marking t
Marking transistor
TO252
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6P060AS
Abstract: 6p060
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Cathode 6P060AS Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM
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6-06AS
O-252AA
6P060AS
6P060AS
6p060
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6P060AS
Abstract: No abstract text available
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Anode 6P060AS Cathode (Flange) Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM
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6-06AS
O-252AA
6P060AS
6P060AS
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6P060AS
Abstract: 6-06AS
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V = 20 ns trr with soft recovery VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Cathode 6P060AS Cathode (Flange) Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM
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6-06AS
O-252AA
6P060AS
6P060AS
6-06AS
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x1ka Marking
Abstract: DO-214 Marking x1ka cr marking DO-214 diode DO-214 AC
Text: DSS 1-100AA Advanced Technical Information IFAV = 1 A VRRM = 100 V VF = 0.6 V Power Schottky Rectifier VRSM VRRM V V 100 100 Type Marking C A SMA DO-214 AC on product A DSS 1-100AA X1KA C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5
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1-100AA
DO-214
x1ka Marking
DO-214 Marking
x1ka cr marking
DO-214 diode
DO-214 AC
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DO-214 diode
Abstract: DO-214 Marking
Text: DSS 1-60BA Advanced Technical Information IFAV = 1 A VRRM = 60 V VF = 0.4 V Power Schottky Rectifier VRSM VRRM V V 60 60 Type Marking C A SMA DO-214 AC on product A DSS 1-60BA X1GB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5
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1-60BA
DO-214
DO-214 diode
DO-214 Marking
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Untitled
Abstract: No abstract text available
Text: DSS 1-40BA Advanced Technical Information IFAV = 1 A VRRM = 40 V VF = 0.34 V Power Schottky Rectifier VRSM VRRM V V 40 40 Type Marking C A SMA DO-214 AC on product A DSS 1-40BA X1EB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5
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1-40BA
DO-214
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marking aa diode
Abstract: No abstract text available
Text: DSS 2-60BB Advanced Technical Information IFAV = 2 A VRRM = 60 V VF = 0.4 V Power Schottky Rectifier VRSM VRRM V V 60 60 Type Marking C A SMB DO-214 AA on product DSS 2-60BB A X2GBB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5
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2-60BB
DO-214
marking aa diode
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DO-214 Marking
Abstract: diode DO214 marking aa diode DO-214 diode
Text: DSS 2-40BB Advanced Technical Information IFAV = 2 A VRRM = 40 V VF = 0.33 V Power Schottky Rectifier VRSM VRRM V V 40 40 Type Marking C A SMB DO-214 AA on product DSS 2-40BB A X2EBB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5
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2-40BB
DO-214
DO-214 Marking
diode DO214
marking aa diode
DO-214 diode
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IEC wiring schematic symbols
Abstract: IEC schematic symbols kg392a2dxa246x
Text: ! New KG SERIES - ILLUMINATED & NON-ILLUMINATED ROCKER SWITCHES FEATURES ● Designed for safety of operation under extreme conditions. ● Ideal for off-highway vehicle applications. ● Protected actuator sealed to IP 65. ● Panel mounting SPDT & DPDT models.
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24VDC,
250VAC
14VDC
12VDC,
KG310A2ACA28TTLH13XX02
IEC wiring schematic symbols
IEC schematic symbols
kg392a2dxa246x
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0y marking
Abstract: 8.0A SCHOTTKY BARRIER RECTIFIERS
Text: SKFM840Y-D FM120-M+ WILLAS THRU THRU 8.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 100V 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAK RECTIFIERS PACKAGE -20V- 200V SKFM8100Y-D FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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OD-123+
SKFM84
FM120-M
SKFM81
00Y-D
FM1200-M
OD-123H
FM150-MH
FM160-M
FM180-MH
0y marking
8.0A SCHOTTKY BARRIER RECTIFIERS
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Untitled
Abstract: No abstract text available
Text: SKFM1040C-D FM120-M+ WILLAS THRU THRU 10.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAKRECTIFIERS PACKAGE-20V- 200V SKFM10200C-D FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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OD-123+
SKFM10
40C-D
FM120-M
200C-D
FM1200-M
FM120-MH
FM130-MH
FM140-MH
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PIMD3
Abstract: No abstract text available
Text: BGS22W2L10 DPDT Dual-Pole / Double-Throw Differential RF Switch Data Sheet Revision 1.4 - October 12, 2012 Power Management & Multimarket Edition October 12, 2012 Published by Infineon Technologies AG 81726 Munich, Germany c 2011 Infineon Technologies AG
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BGS22W2L10
TSLP-10-1-PO
TSLP-10-1
TSLP-10-1-FP
TSLP-10-1
TSLP-10-1-TP
PIMD3
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Mosfet
Abstract: SSF1504D
Text: SSF1504D 150V N-Channel MOSFET Main Product Characteristics VDSS 150V RDS on 0.3Ω(typ) ID 6A DPAK Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF1504D
fo150V
Mosfet
SSF1504D
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P35 marking code transistor
Abstract: Marking P35 sot89 transistor p35 DPLS350Y p35 marking
Text: DPLS350Y LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)
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DPLS350Y
OT89-3L
J-STD-020C
MIL-STD-202,
DS31149
P35 marking code transistor
Marking P35 sot89
transistor p35
DPLS350Y
p35 marking
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Mosfet
Abstract: SSF1020D
Text: SSF1020D 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 16mΩ(typ.) ID 60A DPAK Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF1020D
Mosfet
SSF1020D
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marking 3a SOT89
Abstract: No abstract text available
Text: DPLS350Y LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)
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DPLS350Y
OT89-3L
J-STD-020C
MIL-STD-202,
DS31149
marking 3a SOT89
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mosfet marking code c0
Abstract: TSM4NB65
Text: TSM4NB65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω)(max) ID (A) 650 3.37 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB65
O-220
ITO-220
O-251
TSM4NB60
O-252
mosfet marking code c0
TSM4NB65
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P315 transistor
Abstract: J-STD-020D DPLS31
Text: DPLS315E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW P PR R OD UC UCT T Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70mΩ at 3A
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DPLS315E
DNLS412E)
OT-223
DS31325
P315 transistor
J-STD-020D
DPLS31
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Untitled
Abstract: No abstract text available
Text: DNLS160 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DPLS160) Surface Mount Package Suited for Automated Assembly Lead Free/RoHS Compliant (Note 1)
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DNLS160
DPLS160)
AEC-Q101
OT-23
J-STD-020D
MIL-STD-202,
DS31390
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BSP 300
Abstract: No abstract text available
Text: SIEMENS BSP 300 SIPMOS Small-Signal Transistor • N channel • Enhancement mode Type BSP 300 V'bs 800 V Type BSP 300 Ordering Code Q67050 -T0009 0.19 A ^DS on Package 20 Q SOT-223 Marking Tape and Reel Information Maximum Ratings Parameter Symbol Drain source voltage
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OT-223
Q67050
-T0009
OT-223
BSP 300
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