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    MARKING TAW Search Results

    MARKING TAW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING TAW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    taj 107

    Abstract: 476 10V top 227 avx taj capacitance values code marking code 68 22 I MARKING CODE Capacitance Code diode 476 k transistor case To 106
    Text: TAJ, TRJ, THJ, TAW, TPS, TPM, NOJ, NOS, NOM, NPV, TAC, TPC, TCJ and TLJ Marking For TAJ, TPS & THJ, the positive end of body has videcon readable polarity marking as shown in the diagram. Bodies are marked by indelible laser marking on top surface with capacitance value, voltage and LOT code. R and P case is


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    PDF 0F/10V taj 107 476 10V top 227 avx taj capacitance values code marking code 68 22 I MARKING CODE Capacitance Code diode 476 k transistor case To 106

    MARKING HYNIX

    Abstract: MARKING HYNIX Origin Country
    Text: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration


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    PDF HY62LF16206A-LT12C 128Kx16bit 120ns MARKING HYNIX MARKING HYNIX Origin Country

    hynix hy

    Abstract: HY62LF16206A HY62LF16206A-LT12C 48-TSOP1 MARKING HYNIX MARKING HYNIX Origin Country 48TSOP1
    Text: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration


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    PDF HY62LF16206A-LT12C 128Kx16bit 48-TSOP1 120ns hynix hy HY62LF16206A HY62LF16206A-LT12C MARKING HYNIX MARKING HYNIX Origin Country 48TSOP1

    9RC6066

    Abstract: BOSCH 0 212 912 001 TDA1047 Bosch alternator diode TDA3541 TDA3520 B250/220-10 TDA3510 TDA1519 tda1044
    Text: Frames of designations and their marking 201.12-1 Dip-tab12 « General director: 8342 253890 « Technical director: (8342) 254139 « Commercial director: (8342) 253876 « Financial director: (8342) 254166 ¬ FAX: (8342) 253890 2202.12-1 Quip-tab12 Integrated circuit (IC)


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    PDF Dip-tab12 Quip-tab12 LM235 IL235Z L272M L9686 U2043 U642B MC33193 IN33193N, 9RC6066 BOSCH 0 212 912 001 TDA1047 Bosch alternator diode TDA3541 TDA3520 B250/220-10 TDA3510 TDA1519 tda1044

    HY62CT081

    Abstract: hy62ct081e HY62CT08081E
    Text: HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No History Draft Date 00 Initial Nov.01.2000 Preliminary 01 Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load


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    PDF HY62CT08081E 32Kx8bit HY62CT081E HY62CT08081E HY62CT081 hy62ct081e

    HY62CT08081E

    Abstract: HY62CT08081E-C HY62CT08081E-DGC HY62CT08081E-DGE HY62CT08081E-DGI HY62CT08081E-DPC HY62CT08081E-DPE HY62CT08081E-DPI HY62CT08081E-E HY62CT08081E-I
    Text: HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No History Draft Date 00 Initial Nov.01.2000 Preliminary 01 Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load


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    PDF HY62CT08081E 32Kx8bit HY62CT08081E HY62CT08081E-C HY62CT08081E-DGC HY62CT08081E-DGE HY62CT08081E-DGI HY62CT08081E-DPC HY62CT08081E-DPE HY62CT08081E-DPI HY62CT08081E-E HY62CT08081E-I

    Untitled

    Abstract: No abstract text available
    Text: HY62LF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No 05 06 History Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information


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    PDF HY62LF16201A 128Kx16bit HY62QF16201A HY62LF16201A o6201A HYLF621Ac 100ns

    hysf643

    Abstract: No abstract text available
    Text: HY62SF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 08 Icc1 Value change. 30mA -> 20mA Nov.22.2000 Final 09 Marking Information add tBLZ / tOLZ value is changed


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    PDF HY62SF16403A 256Kx16bit HYSF643A 100ns 120ns hysf643

    HY628400ALLG-55

    Abstract: VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I
    Text: HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Jul.06.2000 Final 05 Revised - Change Iccdr Value : 15uA => 20uA Aug.04.2000 Final 06 Marking Information Add


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    PDF HY628400A 512Kx8bit HY628400A HY628400ALLG-55 VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I

    smd transistor A7

    Abstract: smd transistor marking A14 smd a7 5962-8866204xx smd marking A8 smd transistor a4 SMD a7 Transistor Transistors Diodes smd e2 smd transistor marking A3 smd transistor A8
    Text: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (DCJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2


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    PDF MT5C2568 28-PIN 100ns -55oC 125oC -40oC A1CW-45/883C MT5C2568ECW-55/883C MT5C2568ECW-70/883C smd transistor A7 smd transistor marking A14 smd a7 5962-8866204xx smd marking A8 smd transistor a4 SMD a7 Transistor Transistors Diodes smd e2 smd transistor marking A3 smd transistor A8

    smd marking "d3"

    Abstract: SMD MARKING A13
    Text: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (ECJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2


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    PDF MIL-STD-883 MT5C2568 28-PIN 32-Pin 100ns 5962-8866207UX 5962-8866206UX 5962-8866205UX 5962-8866204UX smd marking "d3" SMD MARKING A13

    Untitled

    Abstract: No abstract text available
    Text: SRAM MT5C2568 Austin Semiconductor, Inc. 32K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY 28-PIN SOJ (DCJ) 28-Pin DIP (C, CW) FEATURES OPTIONS MARKING • Timing 12ns access1 15ns access1 20ns access 25ns access 35ns access 45ns access 55ns access2


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    PDF MIL-STD-883 MT5C2568 28-PIN 32-Pin 100ns 5962-8866207UX 5962-8866206UX 5962-8866205UX 5962-8866204UX

    HY628100B-LLG55

    Abstract: No abstract text available
    Text: HY628100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Jul.14.2000 Final 11 Marking Information Add Revised - E.T -25~85°C , I.T (-40~85°C) Part Insert


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    PDF HY628100B 128Kx8bit HY628100B HY628100B-LLG55

    hy62kt081e

    Abstract: HY62VT08081E-DPC
    Text: HY62K U,V T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Merged 3.0V/3.3V SPEC Jan.20.2000 Final 01 Revised - Marking Information Change : SOP Type


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    PDF HY62K T08081E 32Kx8bit T08081 HY62vT081E HY62KT081E HY62UT081E hy62kt081e HY62VT08081E-DPC

    SM-1994

    Abstract: No abstract text available
    Text: HY62LF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No 03 04 History Divide output load into a couple of factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information


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    PDF HY62LF16101C 64Kx16bit HY62QF16101C HY62LF16101C HY62LF1610F16101C HYLF611Cc 100ns SM-1994

    HY62SF16101C

    Abstract: No abstract text available
    Text: HY62SF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No 03 04 History Divide output load into a couple of factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information


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    PDF HY62SF16101C 64Kx16bit powSF16101C HYSF611Cc 100ns 120ns

    hyuf643

    Abstract: No abstract text available
    Text: HY62UF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 09 Marking Information add tBLZ / tOLZ value is changed Output Load is redefined Isb, Isb1, Vdr, Iccdr are redefined


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    PDF HY62UF16403A 256Kx16bit HY62UF103A HYUF643A hyuf643

    Untitled

    Abstract: No abstract text available
    Text: HY628100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Jul.14.2000 Final 11 Marking Information Add Revised - E.T -25~85°C , I.T (-40~85°C) Part Insert


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    PDF HY628100B 128Kx8bit HY628100B

    5962-8868101LA

    Abstract: SMD a7 Transistor MT5C2564 5962-8868106LA 5962-8868103LA
    Text: SRAM MT5C2564 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-88681 • MIL-STD-883 24-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access


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    PDF MT5C2564 MIL-STD-883 24-Pin 28-Pin Ti4C-20/883C MT5C2564C-25/883C MT5C2564C-35/883C MT5C2564C-45/883C MT5C2564C-55/883C MT5C2564C-70/883C 5962-8868101LA SMD a7 Transistor MT5C2564 5962-8868106LA 5962-8868103LA

    5962-8868101LA

    Abstract: 5962-8868102LA 64K X 4 SRAM 5962-8868103LA
    Text: SRAM MT5C2564 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-88681 • MIL-STD-883 24-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access


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    PDF MIL-STD-883 MT5C2564 MT5C2564C-20/883C MT5C2564C-25/883C MT5C2564C-35/883C MT5C2564C-45/883C MT5C2564C-55/883C MT5C2564C-70/883C 5962-8868105LA 5962-8868106LA 5962-8868101LA 5962-8868102LA 64K X 4 SRAM 5962-8868103LA

    dh 321

    Abstract: SMD a7 S smd a10 SMD a7 Transistor smd diode marking a6 smd marking A8 MT5C2565 mt5c2565 883
    Text: SRAM MT5C2565 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access


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    PDF MT5C2565 MIL-STD-883 28-Pin T5C2565C-45/883C MT5C2565C-55/883C MT5C2565C-70/883C 5962-8952407XX 5962-8952406XX 5962-8952405XX dh 321 SMD a7 S smd a10 SMD a7 Transistor smd diode marking a6 smd marking A8 MT5C2565 mt5c2565 883

    43211

    Abstract: MT5C2565 smd a10 SMD a7 Transistor smd marking A8 5962-8952403XX A12 smd MT5C256
    Text: SRAM MT5C2565 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access


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    PDF MT5C2565 MIL-STD-883 28-Pin 5C2565C-45/883C MT5C2565C-55/883C MT5C2565C-70/883C 5962-8952407XX 5962-8952406XX 5962-8952405XX 43211 MT5C2565 smd a10 SMD a7 Transistor smd marking A8 5962-8952403XX A12 smd MT5C256

    MT5C2565EC-25

    Abstract: No abstract text available
    Text: SRAM MT5C2565 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access


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    PDF MT5C2565 MIL-STD-883 28-Pin C-25/883C MT5C2565C-35/883C MT5C2565C-45/883C MT5C2565C-55/883C MT5C2565C-70/883C 5962-8952407XX 5962-8952406XX MT5C2565EC-25

    Untitled

    Abstract: No abstract text available
    Text: MICRON I 1 SEMICONDUCTOR INC. MT10D140 MEG X 40 DRAM MODULE 1 MEG x 40 DRAM DRAM MODULE FAST PAGE MODE MT10D140 LOW POWER, EXTENDED REFRESH (MT10D140 L) FEATURES MARKING OPTIONS • Tim ing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 72-pin SIMM (gold)


    OCR Scan
    PDF MT10D140 MT10D140) MT10D140 72-pin er/128m MT10D140G-6 T10D140isarandom MT100140 0011SS1