smd marking 35
Abstract: 1SS378 smd diode UM smd diode marking um smd diode UM 85
Text: Diodes SMD Type HIGH SWITCHING DIODE 1SS378 Features Low forward voltage:VF 3 = 0.23 V(Typ) @ IF = 5 mA Absolute M axim um Ratings Ta = 25 Param eter Maxim um (peak) reverse voltage Sym bol Rating Unit V RM 85 V Reverse voltage VR 80 V Maxim um (peak) forward current
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1SS378
smd marking 35
1SS378
smd diode UM
smd diode marking um
smd diode UM 85
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maxim package marking
Abstract: Rm25 1SS349
Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS349 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF3 = 0.49V Typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low voltage current: :IR = 50 0.55
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1SS349
OT-23
maxim package marking
Rm25
1SS349
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smd marking S9
Abstract: 1SS394 rm15
Text: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS394 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF =0.23V Typ . 0.55 Small package 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
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1SS394
OT-23
smd marking S9
1SS394
rm15
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type HIGH SPEED SWITCHING DIODE 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current
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1SS372
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maxim package marking
Abstract: MARKING A3 1SS300
Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS300 Features Small package Low forward voltage :VF 3 = 0.92 V(Typ) Fast reverse recovery time Small total capacitance :trr = 1.6 ns (Typ) :CT = 2.2 pF(Typ) Absolute Maxim um Ratings Ta = 25 Param eter
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1SS300
maxim package marking
MARKING A3
1SS300
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maxim package marking
Abstract: maxim package "marking" 1ss373
Text: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS373 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low forward voltage :VF = 0.23V TYP. IF = 5mA +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max Absolute Maxim um Ratings Ta = 25
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1SS373
OD-523
07max
77max
maxim package marking
maxim package "marking"
1ss373
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k9 diode
Abstract: smd transistor marking 26 1SS348
Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS348 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF 3 = 0.56V(Typ). 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1
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1SS348
OT-23
k9 diode
smd transistor marking 26
1SS348
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smd marking S9
Abstract: maximum current rating of diodes SMD MARKING smd marking 35 1SS395
Text: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS395 Features Low forward voltage:VF 2 = 0.23 V(Typ) @ IF = 5mA Absolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol R ating U nit V RM 15 V R everse voltage VR 10 V
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1SS395
smd marking S9
maximum current rating of diodes
SMD MARKING
smd marking 35
1SS395
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smd transistor h9
Abstract: smd diode h9 H9 sot 23 MARKING H9 transistor h9 Rm25 1SS344 h9 MARKING
Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS344 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Fast reverse recovery time: trr = 20ns Typ . 0.55 Low forward voltage: VF(3) = 0.50V(Typ). 2 +0.1 0.95-0.1 +0.1
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1SS344
OT-23
smd transistor h9
smd diode h9
H9 sot 23
MARKING H9
transistor h9
Rm25
1SS344
h9 MARKING
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marking C1
Abstract: 1SS387 maxim package marking
Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS387 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Small Package + +0.1 0.6-0.1 - Low forward voltage :VF 3 = 0.98V(TYP.) Fast Forward Voltage :trr = 1.6ns(TYP.) 0.77max :CT = 0.5pF(TY
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1SS387
OD-523
77max
07max
marking C1
1SS387
maxim package marking
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1SS393
Abstract: No abstract text available
Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS393 Features Low forward voltage:VF 3 = 0.54 V(Typ.) Low reverse current:IR = 5 A A bsolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol R ating U nit V RM 45 V R everse voltage
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1SS393
1SS393
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MARKING b3
Abstract: smd b3 1SS301
Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS301 Features Low forward voltage:VF 3 = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacitance:CT = 0.9 pF(Typ) Absolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage
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1SS301
MARKING b3
smd b3
1SS301
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f1 smd marking
Abstract: marking A1 1SS272 smd marking A1
Text: Diodes SMD Type Ultar High Speed Switching Applications 1SS272 Unit: mm Features Low Forward Voltage:VF 3 =0.92 V(Typ.) Fast Reverse Recovery Time:trr = 1.6 ns (Typ.) Small Total Capacitance: CT = 0.9pF(Typ.) Absolute M axim um R atings T a = 25 P aram eter
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1SS272
f1 smd marking
marking A1
1SS272
smd marking A1
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smd A4
Abstract: MARKING A4 f1 smd marking smd sot343 SM21 1SS383 smd marking a4 smd marking SOT343
Text: Diodes SMD Type Low Voltage High Speed Switching 1SS383 SOT-343 Unit: mm Features Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5 A (max) Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (peak) reverse voltage
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1SS383
OT-343
10orward
smd A4
MARKING A4
f1 smd marking
smd sot343
SM21
1SS383
smd marking a4
smd marking SOT343
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Untitled
Abstract: No abstract text available
Text: Product specification 1SS383 SOT-343 Unit: mm Features Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5 A (max) Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (peak) reverse voltage
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1SS383
OT-343
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A-100
Abstract: SC321-2 sc321
Text: SC321 1.0A BaH gatg'ffr-K : Outline Drawings FAST RECOVERY DIODE I I * * : Features 185 : Marking Surface mount device High voltage by mesa design High reliability : Applications High speed switching. M axim um Ratings and Characteristics : Absolute Maximum Ratings
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sc321
SC32K1
A-100
SC321-2
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 16-02W Silicon Sw itching Diode Prelim inary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q 62702-A1239 1=A SCD-80 2 =C Maxim um Ratings Param eter Sym bol Diode reverse voltage
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6-02W
62702-A1239
SCD-80
100ns,
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Untitled
Abstract: No abstract text available
Text: SMBD 6050 Silicon Switching Diode For high-speed switching applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8-m m tape Package SMBD 6 0 5 0 S5A upon request upon request SOT 23 M axim um ratings Param eter Symbol Reverse voltage
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MARKING SY SOT23
Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330
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FLLD261
-200m
FLLD263
MARKING SY SOT23
SY SOT23
MARKING SOT23-3 LF
MARKING P8A
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Untitled
Abstract: No abstract text available
Text: Supertex inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in ) 100V 6.0Q. 0.5A O rder N um ber / Package Product marking for TO-236AB: TO-236AB* SA* BSS123 where = 2-week alpha date code
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BSS123
O-236AB:
O-236AB*
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620 tg diode
Abstract: 30V30
Text: Silicon Tuning Diode BB 620 • For Hyperband TV/VTR tuners. Bd I Type BB620 Ordering code Q 6 2 7 0 2 -B 4 0 3 Marking red/S M axim um ratings Vr h To, ^»tg S iem ens 30 20 -55.+125 -55.+150 V mA °C °C o o Reverse voltage Forward current Operating temperature range
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BB620
620 tg diode
30V30
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DIODE S2v 73
Abstract: DIODE in s2v shindengen rectifier SHINDENGEN DIODE DIODE S2v 50 DIODE S2v S2V60
Text: -A S æ fE ^ *-K 7 Rectifier Diode Axial Diode OUTLINE DIMENSIONS S2V Case : 1.0 <f> Um l ; mm W e ig h t : 69g 24 MIS *4 8"“ , 73 1 600V 1.7A llfg M ° M > © _ Marking ffl C o lo r code, Cathode band i í • -B- © CD •M W Œ Red : S2V20 îj w
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S2V20
S2V20
S2V60
DIODE S2v 73
DIODE in s2v
shindengen rectifier
SHINDENGEN DIODE
DIODE S2v 50
DIODE S2v
S2V60
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Untitled
Abstract: No abstract text available
Text: Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v d ss/ b v dgs R dS ON (m ax) Id(ON) (m in) 60V 7.5Q. 0.5A O rd e r N um ber / Package Product marking for TO-236AB: TO-236AB* 702* 2N7002 where * = 2-week alpha date code
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2N7002
O-236AB:
O-236AB*
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HSMP3831
Abstract: HSMP-3831 diode T31 Marking L30 diode part marking HSMP-3800 mark E4 SOT-23 MARKING CODE L32 marking SH SOT23 MP3890 MARK, g5 sot23
Text: W gSg H E W L E T T müHÆ P A C K A R D Surface Mount PIN Diodes Technical D ata HSMP-38XX and HSMP-48XX Series Features • D io d e s O p tim iz ed for: Low Current Switching Low Distortion A ttenuating Ultra-Low Distortion Switching Microwave Frequency
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HSMP-38XX
HSMP-48XX
OT-23
RS-481,
HSMP3831
HSMP-3831
diode T31 Marking
L30 diode part marking
HSMP-3800
mark E4 SOT-23
MARKING CODE L32
marking SH SOT23
MP3890
MARK, g5 sot23
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