TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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Untitled
Abstract: No abstract text available
Text: VN0605T N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY .B'SSSSSfe TOP VIEW SOT-23 V BR|DSS •d (A ri r ID 2 iC 60 5 0.18 H 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 n PRODUCT MARKING VN0605T V02 I ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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VN0605T
OT-23
VNDS06
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VARIO switch
Abstract: vcfx-ge4 2 Pole 5 Position Rotary Switch VCF02GE VCFN-40GE VCFN-12GE 12GE "3 pole Rotary Switch" VCF-01GE switch disconnectors
Text: Safety solutions using Preventa References VARIO enclosed switch disconnectors pre-assembled Enclosed switch disconnectors for high performance applications 580571 b Marking on operator . b 3-pole rotary switch disconnectors from 10 to 140 A b Padlockable operating handle (padlock not included).
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23053-EN
VARIO switch
vcfx-ge4
2 Pole 5 Position Rotary Switch
VCF02GE
VCFN-40GE
VCFN-12GE
12GE
"3 pole Rotary Switch"
VCF-01GE
switch disconnectors
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BFT65
Abstract: transistor bft65 f451 61 SIEMENS 25813
Text: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration
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BFT65
BFT65
Q62702-F451
fl235bDS
transistor bft65
f451
61 SIEMENS
25813
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transistor marking MCs
Abstract: SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11
Text: BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration BFS 17W MCs 1=B Q62702-F1645 2=E Package 3=C SOT-323 Maximum Ratings of any single Transistor Parameter
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Q62702-F1645
OT-323
Nov-28-1996
transistor marking MCs
SOT 23 CODE MCS
NPN marking MCs
marking MCs sot-323
Q62702-F1645
bfs 11
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din 3141
Abstract: BFW92A transistor bfw 88 bfw 92 bfw 96
Text: BFW 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92A Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings
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BFW92A
D-74025
din 3141
transistor bfw 88
bfw 92
bfw 96
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Untitled
Abstract: No abstract text available
Text: BFS17W NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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BFS17W
VSO05561
OT323
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BCW66
Abstract: BFS17P E6327 marking code MCs
Text: BFS17P NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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BFS17P
VPS05161
BCW66
BFS17P
E6327
marking code MCs
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BFS17P
Abstract: No abstract text available
Text: BFS17P NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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BFS17P
VPS05161
BFS17P
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mar 806
Abstract: No abstract text available
Text: BFS17W NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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BFS17W
VSO05561
OT323
mar 806
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BFS17P
Abstract: No abstract text available
Text: BFS17P NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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BFS17P
VPS05161
Jul-12-2001
BFS17P
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BFS17W
Abstract: VSO05561
Text: BFS17W NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage
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BFS17W
VSO05561
OT323
Jul-13-2001
BFS17W
VSO05561
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VSO05561
Abstract: No abstract text available
Text: BFS 17W NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS 17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage
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VSO05561
OT-323
Oct-12-1999
VSO05561
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Untitled
Abstract: No abstract text available
Text: BFS 17P NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS 17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter Symbol Collector-emitter voltage
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VPS05161
OT-23
Oct-12-1999
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6c2 transistor
Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor
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OT-363
Q62702-F1645
Dec-18-1996
6c2 transistor
transistor marking MCs
Q62702-F1645
transistor BFs 18
SOT 23 CODE MCS
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Untitled
Abstract: No abstract text available
Text: BFS17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
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BFS17S
VPS05604
EHA07196
OT363
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BFS17S
Abstract: VPS05604 NPN marking MCs
Text: BFS17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
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BFS17S
VPS05604
EHA07196
OT363
Aug-20-2001
BFS17S
VPS05604
NPN marking MCs
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DIN 6784 c1
Abstract: BCR108S BFS17S E6327 VPS05604
Text: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
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BFS17S
VPS05604
EHA07196
OT363
DIN 6784 c1
BCR108S
BFS17S
E6327
VPS05604
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VPS05604
Abstract: bfs 11
Text: BFS 17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363
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VPS05604
EHA07196
OT-363
Oct-25-1999
VPS05604
bfs 11
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ctf 5510
Abstract: marking code x18 2QSP24 MO-137 2CTF-V01M-Q24R 2CTF-V02M-Q24R
Text: Features 24Q CTF M 6 V02 022 • ■ ■ Applications 18 RC terminators tied to a common node Stable thin-film-on-silicon technology Ultra-miniature packages to JEDEC standards ■ ■ ■ High-speed bus termination Low power consumption Ideal for space-constrained applications
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24Thin-Film-on-Silicon
e/IPA0301
ctf 5510
marking code x18
2QSP24
MO-137
2CTF-V01M-Q24R
2CTF-V02M-Q24R
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2CTF-V01M-Q24R
Abstract: 2CTF-V02M-Q24R 2QSP24 MO-137 V06M ctf 5510
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E • 24Q CTF M 6 V02 022 *R Features ■ ■ ■ ■ Applications Lead free versions available RoHS compliant lead free version * 18 RC terminators tied to a common node Stable thin-film-on-silicon technology Ultra-miniature packages to JEDEC
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featu02
e/IPA0301
2CTF-V01M-Q24R
2CTF-V02M-Q24R
2QSP24
MO-137
V06M
ctf 5510
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marking v02
Abstract: HMC656LP2E
Text: HMC656LP2E to HMC658LP2E v02.0112 WIDEBAND FIXED ATTENUATOR FAMILY, DC - 25 GHz HMC656LP2E / HMC657LP2E / HMC658LP2E Typical Applications Features The HMC656LP2E - HMC658LP2E are ideal for: 3 Attenuator Products: 10, 15, & 20 dB Fixed Attenuation Levels • Fiber Optics
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HMC656LP2E
HMC658LP2E
HMC657LP2E
HMC658LP2E
657LP2E
658LP2E
marking v02
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Untitled
Abstract: No abstract text available
Text: HMC656LP2E TO HMC658LP2E v02.0112 WIDEBAND FIXED ATTENUATOR FAMILY, DC - 25 GHz HMC656LP2E / HMC657LP2E / HMC658LP2E Typical Applications Features The HMC656LP2E - HMC658LP2E are ideal for: 3 Attenuator Products: 10, 15, & 20 dB Fixed Attenuation Levels • Fiber Optics
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HMC656LP2E
HMC658LP2E
HMC657LP2E
HMC658LP2E
657LP2E
658LP2E
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HMC189MS8E
Abstract: H189 HMC189MS8 Rogers 4350 datasheet 189MS8E
Text: HMC189MS8 / 189MS8E v02.0505 FREQ. MULTIPLIERS - PASSIVE - SMT 7 GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 2 - 4 GHz INPUT Typical Applications Features The HMC189MS8 / HMC189MS8E is suitable for: Conversion Loss: 13 dB • Wireless Local Loop Fo, 3Fo, 4Fo Isolation: 33 dB
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HMC189MS8
189MS8E
HMC189MS8E
HMC189MS8
H189
Rogers 4350 datasheet
189MS8E
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