MARKING WPS Search Results

MARKING WPS Result Highlights (5)

Part	Manufacturer	Description
5962-8950303GC	Rochester Electronics LLC	ICM7555M - Dual Marked (ICM7555MTV/883)
54HC221AJ/883C	Rochester Electronics LLC	54HC221AJ/883C - Dual marked (5962-8780502EA)
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)

MARKING WPS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MARKING 68W SOT-23 Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23 Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06	Original	25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23	PDF
transistor Bc 540 Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89 Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W	Original	0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89	PDF
K 192 A transistor Abstract: No abstract text available Text: SIEMENS BCR 192 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22ki2, R2=47kQ Type BCR 192 Marking Ordering Code Pin Configuration WPs Q62702-C2265 1=B Package 2=E 3=C SOT-23	OCR Scan	22ki2, Q62702-C2265 OT-23 K 192 A transistor	PDF
Untitled Abstract: No abstract text available Text: BCR 192W PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R-\|=22k£2, R2=47k£2 c FI □ ill Type Marking Ordering Code Pin Confic uration BCR 192W WPs 1= B Q62702-C2282 Package 2= E	OCR Scan	Q62702-C2282 OT-323 ov-27	PDF
c2282 Abstract: Q62702-C2282 Text: BCR 192W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 192W WPs 1=B Q62702-C2282 Package 2=E 3=C SOT-323	Original	Q62702-C2282 OT-323 Nov-27-1996 c2282 Q62702-C2282	PDF
SOT wps Abstract: Q62702-C2265 Text: BCR 192 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 192 WPs 1=B Q62702-C2265 Package 2=E 3=C SOT-23 Maximum Ratings	Original	Q62702-C2265 OT-23 Nov-27-1996 SOT wps Q62702-C2265	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BCR 192W PNP Silicon Digital Transistor Type Marking O rdering Code Pin Configuration BCR 192W WPs Q62702-C 2282 1= B Package 2 = E 3 = C SOT-323 M axim um Ratings Param eter Sym bol C ollector-em itter voltage ^CEO 50 C ollector-base voltage ^CBO	OCR Scan	Q62702-C OT-323	PDF
VSO05561 Abstract: No abstract text available Text: BCR 192W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R 2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 192W WPs Pin Configuration 1=B 2=E Package	Original	VSO05561 EHA07183 OT-323 Oct-19-1999 VSO05561	PDF
SC-75 Abstract: No abstract text available Text: BCR 192T PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R 2=47kΩ 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type Marking BCR 192T WPs Pin Configuration 1=B 2=E Package	Original	VPS05996 EHA07183 SC-75 Sep-29-1999 SC-75	PDF
BCR192T Abstract: SC75 marking WPs Text: BCR192T PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R 1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type BCR192T Marking WPs 1=B Pin Configuration 2=E 3=C Package SC75	Original	BCR192T VPS05996 EHA07183 Jul-23-2001 BCR192T SC75 marking WPs	PDF
BCR192W Abstract: VSO05561 Text: BCR192W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR192W WPs Pin Configuration 1=B 2=E Package 3=C SOT323	Original	BCR192W VSO05561 EHA07183 OT323 Jul-23-2001 BCR192W VSO05561	PDF
BCR192W Abstract: VSO05561 Text: BCR192W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR192W WPs Pin Configuration 1=B 2=E Package 3=C SOT323	Original	BCR192W VSO05561 EHA07183 OT323 Dec-13-2001 BCR192W VSO05561	PDF
marking WPs Abstract: BCR192T SC75 Text: BCR192T PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R 1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type BCR192T Marking WPs 1=B Pin Configuration 2=E 3=C Package SC75	Original	BCR192T VPS05996 EHA07183 Dec-13-2001 marking WPs BCR192T SC75	PDF
BCR192 Abstract: No abstract text available Text: BCR192 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR192 WPs Pin Configuration 1=B 2=E Package 3=C SOT23	Original	BCR192 VPS05161 EHA07183 Dec-13-2001 BCR192	PDF

1B SOT 23 Abstract: ic 192 d Text: BCR 192 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 192 WPs Pin Configuration 1=B 2=E Package 3=C SOT-23	Original	VPS05161 EHA07183 OT-23 Oct-19-1999 1B SOT 23 ic 192 d	PDF
lpddr2 256mb Abstract: NT6DM8M32AC-T1 NT6DM16M16AD NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2 Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ	Original	256Mb NT6DM16M16AD NT6DM8M32AC -16Meg 16M16 lpddr2 256mb NT6DM8M32AC-T1 NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2	PDF
NT6DM16M16AD-T1 Abstract: 64M32 HP 3458 NT6DM16M16AD-T1I Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ	Original	256Mb NT6DM16M16AD NT6DM8M32AC -16Meg 16M16 NT6DM16M16AD-T1 64M32 HP 3458 NT6DM16M16AD-T1I	PDF
NT6DM16M Abstract: No abstract text available Text: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver	Original	512Mb NT6DM32M16AD NT6DM16M32AC -32Meg 32M16 -16Meg 16M32 NT6DM16M	PDF
BP2G1 Abstract: GP2X1 BP2G sp marking GP2X WP4N BP4P wp4f1 BP4U D17I Text: PRODUCT CHANGE NOTICE PCN Form D4-E000-73 PCN #09-007 NOTIFICATION DATE: April 24, 2009 MODELS FAMILY AFFECTED: BP, GP, SP, WP (Power Splitters) D1, D2 (Directional Couplers) See Attached List for Specific Models EXTENT OF CHANGE: Device marking from ink to Laser	Original	D4-E000-73) PCN09-007 M87093 D3-E040 BP2G1 GP2X1 BP2G sp marking GP2X WP4N BP4P wp4f1 BP4U D17I	PDF
NT6DM32M16AD-T1 Abstract: NT6DM32M16AD NT6DM16M32AC-T1 NT6DM16M32AC NT6DM16M32AC-T3 216-ball NT6DM32M16AD-T3 256M16 lpddr2 256mb lpddr2 layout Text: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver	Original	512Mb NT6DM32M16AD NT6DM16M32AC -32Meg -16Meg -60-ball -90-ball NT6DM32M16AD-T1 NT6DM16M32AC-T1 NT6DM16M32AC NT6DM16M32AC-T3 216-ball NT6DM32M16AD-T3 256M16 lpddr2 256mb lpddr2 layout	PDF
LPDDR 8Gb Abstract: lpddr2 256mb NT6DM32M16AD-T1 NT6DM32M16AD nanya lpddr2 spec Text: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver	Original	512Mb NT6DM32M16AD NT6DM16M32AC -32Meg -16Meg -60-ball -90-ball LPDDR 8Gb lpddr2 256mb NT6DM32M16AD-T1 nanya lpddr2 spec	PDF
ss98 transistor Abstract: transistor marking code wgs Text: SIEMENS BSS 98 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type BSS 98 Vds 50 V Type BSS 98 BSS 98 BSS 98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 b 0.3 A %S(on) 3.5 £2 Package Marking	OCR Scan	Q62702-S053 Q62702-S517 Q62702-S635 E6288 E6296 E6325 BSS98 ss98 transistor transistor marking code wgs	PDF
MT47H128M8CF-25 Abstract: 8 resistor array 10k smd 103 Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration	Original	MT47H128M8 MT47H64M16 18-compatible) 8192-cycle 09005aef840eff89 MT47H128M8CF-25 8 resistor array 10k smd 103	PDF
Untitled Abstract: No abstract text available Text: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration	Original	MT47H256M8 MT47H128M16 60-ball 84-ball DDR2-800) DDR2-667) 09005aef8441c566	PDF

MARKING WPS Search Results

MARKING WPS Result Highlights (5)

MARKING WPS Datasheets Context Search

MARKING 68W SOT-23

transistor Bc 540

K 192 A transistor

Untitled

c2282

SOT wps

Untitled

VSO05561

SC-75

BCR192T

BCR192W

BCR192W

marking WPs

BCR192

1B SOT 23

lpddr2 256mb

NT6DM16M16AD-T1

NT6DM16M

BP2G1

NT6DM32M16AD-T1

LPDDR 8Gb

ss98 transistor

MT47H128M8CF-25

Untitled