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    MARKING WTS SOT Search Results

    MARKING WTS SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation

    MARKING WTS SOT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor marking code wts

    Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
    Text: SIEMENS BCR 166 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=4.7ki2, R2=47kfl Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23


    OCR Scan     		47kfl) Q62702-C2339 OT-23 transistor marking code wts sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor PDF

    MARKING CODE T7s

    Abstract: MARKINGCODET7s
    Text: SIEM ENS BCR 166W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kiî, R2=47kfi TT IF Type Marking Ordering Code Pin Configuration BCR 166W WTs UPON INQUIRY 1=B Package 2=E


    OCR Scan     		47kfi) OT-323 fl235b05 623St30S MARKING CODE T7s MARKINGCODET7s PDF

    transistor marking code wts

    Abstract: No abstract text available
    Text: BCR 166W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166W WTs 1=B UPON INQUIRY Package 2=E 3=C SOT-323


    Original     		OT-323 Nov-26-1996 transistor marking code wts PDF

    1207A

    Abstract: No abstract text available
    Text: SIEMENS BCR 166 PNP Silicon Digital Transistor *Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kfl, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings


    OCR Scan     		Q62702-C2339 OT-23 BE35b05 S35b05 fi235bD5 1207A PDF

    transistor marking code wts

    Abstract: transistor marking code wts 15
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs


    Original     		BCR166. BCR166/F/L3 BCR166T/W EHA07183 BCR166 BCR166F BCR166L3 BCR166T BCR166W OT323 transistor marking code wts transistor marking code wts 15 PDF

    transistor marking code wts

    Abstract: sot-23 WTs sot-23 marking WTs Q62702-C2339
    Text: BCR 166 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		Q62702-C2339 OT-23 Nov-26-1996 transistor marking code wts sot-23 WTs sot-23 marking WTs Q62702-C2339 PDF

    marking WTS sot23

    Abstract: TRANSISTOR wts WTs transistor BCR166 wts sot23 BCR166F BCR166L3 BCR166T BCR166W SC75
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs


    Original     		BCR166. BCR166/F/L3 BCR166T/W EHA07183 BCR166 BCR166F BCR166L3 BCR166T BCR166W OT323 marking WTS sot23 TRANSISTOR wts WTs transistor BCR166 wts sot23 BCR166F BCR166L3 BCR166T BCR166W SC75 PDF

    BCR166W

    Abstract: VSO05561
    Text: BCR166W PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR166W WTs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		BCR166W VSO05561 EHA07183 OT323 Nov-29-2001 BCR166W VSO05561 PDF

    BCR166W

    Abstract: VSO05561
    Text: BCR166W PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR166W WTs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		BCR166W VSO05561 EHA07183 OT323 Jul-16-2001 BCR166W VSO05561 PDF

    BCR166

    Abstract: No abstract text available
    Text: BCR166 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR166 WTs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		BCR166 VPS05161 EHA07183 Jul-16-2001 BCR166 PDF

    transistor marking code wts

    Abstract: BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ BCR166/F/L3 BCR166T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR166 WTs


    Original     		BCR166. BCR166/F/L3 BCR166T/W EHA07183 BCR166 BCR166F BCR166L3 BCR166T BCR166W OT323 transistor marking code wts BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8 PDF

    BCR166

    Abstract: No abstract text available
    Text: BCR166 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR166 WTs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		BCR166 VPS05161 EHA07183 Nov-29-2001 BCR166 PDF

    VSO05561

    Abstract: No abstract text available
    Text: BCR 166W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 166W WTs Pin Configuration 1=B 2=E Package


    Original     		VSO05561 EHA07183 OT-323 Oct-19-1999 VSO05561 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR 166 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 166 WTs Pin Configuration 1=B 2=E Package 3=C


    Original     		VPS05161 EHA07183 OT-23 Oct-19-1999 PDF

    transistor marking code wts

    Abstract: BCR108W BCR166 BCR166F BCR166W BCW66 bcr1
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR166/F BCR166W


    Original     		BCR166. BCR166/F BCR166W EHA07183 BCR166 BCR166F OT323 transistor marking code wts BCR108W BCR166 BCR166F BCR166W BCW66 bcr1 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR166./SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W SEMB13 C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 R1 R2 1 B 2 1 2


    Original     		BCR166. /SEMB13 BCR166/F/L3 BCR166T/W SEMB13 EHA07183 EHA07173 BCR166 BCR166F BCR166L3 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3


    Original     		BCR166. BCR166 BCR166W EHA07183 OT323 PDF

    transistor marking code wts

    Abstract: No abstract text available
    Text: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3


    Original     		BCR166. BCR166 BCR166W EHA07183 dissipationBCR166, BCR166W, OT323 transistor marking code wts PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2


    OCR Scan     		47ki2, Q62702-C2496 OT-363 235LQ5 D12Qb7M BCR48PN D12Qb75 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation


    OCR Scan     		OT-363 Q62702-C2495 PDF

    transistor marking code wts

    Abstract: Marking W1s
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		BCR48PN EHA07193 EHA07176 OT-363 OT363 transistor marking code wts Marking W1s PDF

    transistor bc 577

    Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2


    OCR Scan     		47ki2 Q62702-C2496 OT-363 transistor bc 577 bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575 PDF

    transistor digital 47k 22k PNP NPN

    Abstract: VPS05604 "two TRANSISTORs" sot-363 pnp npn WTs12 Marking wts sot
    Text: BCR 48PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor 2 1 NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		VPS05604 OT-363 EHA07193 EHA07176 Oct-19-1999 transistor digital 47k 22k PNP NPN VPS05604 "two TRANSISTORs" sot-363 pnp npn WTs12 Marking wts sot PDF

    transistor digital 47k 22k PNP NPN

    Abstract: BCR48PN VPS05604
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor 2 1 NPN: R1 = 47k, R2 = 47k VPS05604 PNP: R1= 2.2k, R 2 = 47k


    Original     		BCR48PN OT-363 VPS05604 EHA07193 EHA07176 Nov-29-2001 transistor digital 47k 22k PNP NPN BCR48PN VPS05604 PDF