Untitled
Abstract: No abstract text available
Text: r 6 3 6 7 2 5 5 M O TO RO LA S C D IO D E S / O P T O Tfi 980 78628 DE|b3b7HS5 P _ T - 0 7-/9 DOTahEâ t T -fH l SOT-23 D IO D E S (continued) Zener Diodes (continued) Pinout: 1-Anode, 2-NC, 3-Cathode VZ i Volts Vz2 Volts V Z3 Volts «1 : iz mA <Z2 1 1
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OCR Scan
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OT-23
BV2109
BV3102
BV409
MMBV432L
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PDF
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BZX84C3V3 z14
Abstract: diode zener z9 Z16 SOT23
Text: 350mW ZENER DIODES BZX84 SERIES 350mW ZENER DIODE • The latest comprehensive data to fully support these parts is readily available. • • • • • New Product SOT23 Package Voltage Max. Zener Typ. Temp Max. Reverse TA=25°C Range Impedance Coefficient
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Original
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350mW
BZX84
BZX84C2V4
BZX84C2V7
BZX84C3V0
BZX84C3V3
BZX84C3V6
BZX84C3V9
BZX84C4V3
BZX84C3V3 z14
diode zener z9
Z16 SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: BZX84C2V4 Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 75V 3 Mechanical Data: 1 *Case : SOT-23 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208
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Original
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BZX84C2V4
225mw
OT-23
MIL-STD-202,
008grams
OT-23
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PDF
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zener diode zx 12
Abstract: zener diode zx 47 marking code zt sot23 sot-23 MARKING CODE Y.2 zx 9.1 BZX84C2V4 MARKING ZT SOT23 Z11 Marking Code BZX84C
Text: BZX84C2V4 Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 75V 3 Mechanical Data: 1 *Case : SOT-23 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208
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Original
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BZX84C2V4
225mw
OT-23
MIL-STD-202,
008grams
OT-23
zener diode zx 12
zener diode zx 47
marking code zt sot23
sot-23 MARKING CODE Y.2
zx 9.1
MARKING ZT SOT23
Z11 Marking Code
BZX84C
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PDF
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Untitled
Abstract: No abstract text available
Text: BZX84C2V4 Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 75V 3 Mechanical Data: 1 *Case : SOT-23 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208
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Original
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BZX84C2V4
225mw
OT-23
MIL-STD-202,
008grams
OT-23
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PDF
|
Untitled
Abstract: No abstract text available
Text: BZX84C2V4 Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS * “G” Lead Pb -Free Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 75V 3 1 Mechanical Data: 2 SOT-23 *Case : SOT-23 Molded plastic
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Original
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BZX84C2V4
225mw
OT-23
OT-23
MIL-STD-202,
008grams
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulator Diodes 225 mW SOT-23 Surface Mount LBZX84C2V4LT1 Series FEATURE ƽMaximum case temperature for 3 soldering purposes: 260°C for 10 seconds ƽPb-Free package is available. 1 2 ORDERING INFORMATION Package Shipping
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Original
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OT-23
LBZX84C2V4LT1
LBZX84CxxxLT1
OT-23
3000/Tape
LBZX84CxxxLT1G
LBZX84CxxxLT3
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PDF
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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Original
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MRF18090A
MRF18090AR3
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PDF
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smd transistor marking j2
Abstract: sot 23 transistor marking w 26 MRF18060A
Text: Freescale Semiconductor Technical Data Document Number: MRF18060A-2 Rev. 11, 10/2008 RF Power Field Effect Transistor MRF18060ALR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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Original
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MRF18060A--2
MRF18060ALR3
MRF18060A--2
smd transistor marking j2
sot 23 transistor marking w 26
MRF18060A
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PDF
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MRF18060A
Abstract: smd transistor marking z3 archive smd transistor marking j2 smd transistor marking z1
Text: Freescale Semiconductor Technical Data Document Number: MRF18060A-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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Original
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MRF18060A--1
MRF18060ALSR3
MRF18060A--1
MRF18060A
smd transistor marking z3
archive
smd transistor marking j2
smd transistor marking z1
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PDF
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TLX8-0300
Abstract: transistor J585
Text: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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Original
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MRF18090A
MRF18090AR3
TLX8-0300
transistor J585
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PDF
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NIPPON CAPACITORS
Abstract: Transistor J438 CRCW08051001FKEA MRF21010
Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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Original
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MRF21010--2
MRF21010LSR1
MRF21010--2
NIPPON CAPACITORS
Transistor J438
CRCW08051001FKEA
MRF21010
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PDF
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CRCW08051001FKEA
Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010
Text: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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Original
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MRF21010--2
MRF21010LSR1
CRCW08051001FKEA
TLX8-0300
C-XM-99-001-01
pd cms
NIPPON CAPACITORS
bourns 3224w
FM LDMOS freescale transistor
atc100B100GT500XT
marking us capacitor pf l1
MRF21010
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PDF
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transistor 131
Abstract: MRF18060ALR3 transistor Z6 MRF18060A
Text: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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Original
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MRF18060A
MRF18060ALR3
MRF18060ALSR3
transistor 131
transistor Z6
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SEMICONDUCTOR TECHNICAL DATA LBZX84C2V4LT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 SOT– 23 TO–236AB
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Original
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LBZX84C2V4LT1
225mW
OT-23
236AB)
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SEMICONDUCTOR TECHNICAL DATA LBZX84C2V4LT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 SOT– 23 TO–236AB
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Original
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LBZX84C2V4LT1
225mW
OT-23
236AB)
OT-23
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PDF
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LBZX84C20LT1
Abstract: LBZX84C3V0LT1 LBZX84C16LT1 2J225 LBZX84C7V5LT1
Text: LESHAN RADIO COMPANY, LTD. SEMICONDUCTOR TECHNICAL DATA LBZX84C2V4LT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 SOT– 23 TO–236AB
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Original
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LBZX84C2V4LT1
225mW
OT-23
236AB)
OT-23
LBZX84C20LT1
LBZX84C3V0LT1
LBZX84C16LT1
2J225
LBZX84C7V5LT1
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PDF
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BZX84C12LT1
Abstract: BZX84C2V4LT1 BZX84C2V7LT1 BZX84C3V0LT1 BZX84C3V3LT1 BZX84C3V6LT1 BZX84C3V9LT1 BZX84C4V3LT1 BZX84C4V7LT1 BZX84C5V1LT1
Text: LESHAN RADIO COMPANY, LTD. SEMICONDUCTOR TECHNICAL DATA BZX84C2V4LT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 CASE 318–07, STYLE8
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Original
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BZX84C2V4LT1
225mW
OT-23
236AB)
OT-23
BZX84C12LT1
BZX84C2V4LT1
BZX84C2V7LT1
BZX84C3V0LT1
BZX84C3V3LT1
BZX84C3V6LT1
BZX84C3V9LT1
BZX84C4V3LT1
BZX84C4V7LT1
BZX84C5V1LT1
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PDF
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CRCW08052201FKEA
Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
Text: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,
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Original
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MRF21010--1
MRF21010LR1
CRCW08052201FKEA
CRCW080510R0FKE
MRF21010-1
MRF21010
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PDF
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capacitor 2200 micro M
Abstract: chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LR1 MRF21010LSR1 macom marking
Text: Document Number: MRF21010 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFETs 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
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Original
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MRF21010
MRF21010LR1
MRF21010LSR1
MRF21010LR1
capacitor 2200 micro M
chip resistors bourns
MACOM SOT23 MARKING
marking us capacitor pf l1
sot-23/BC847
MRF21010
MRF21010LSR1
macom marking
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PDF
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CRCW08051001FKEA
Abstract: MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010
Text: Document Number: MRF21010-1 Rev. 10, 10/2008 Freescale Semiconductor Technical Data MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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Original
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MRF21010--1
MRF21010LR1
CRCW08051001FKEA
MRF21010 r1
marking us capacitor pf l1
ATC100B0R5BT500XT
ATC100B102JT50XT
MRF21010LR1
T491D106K035AT
ONsemi marking C10
MRF21010
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PDF
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marking z17
Abstract: z1 BZX84C4V7 BZX84C3V9 marking Z1 sot Z5.6 BZX84C2V7 BZX84C3 BZX84C3V3 BZX84C3V6 MMBZ5223B
Text: SURFACE MOUNT ZENER DIODES BZX84C-SERIES 350mW CrossPart No. Marking Zener Max.Dyn. Test Max.Dyn. Test Temp. Rev. Code Voltage Imped. Current Imped. Current Coeff. Current @ Izt @ Izt @ Izt @Vr Vz V Zzt(Ω) Reference @ Izk Izt(mA) Zzk(Ω) Izk(mA) avz(%/k)
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Original
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BZX84C-SERIES
350mW
BZX84C2V7
MMBZ5223B
BZX84C3
MMBZ5225B
BZX84C3V3
MMBZ5226B
BZX84C3V6
MMBZ5227B
marking z17
z1 BZX84C4V7
BZX84C3V9
marking Z1 sot
Z5.6
BZX84C3
MMBZ5223B
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PDF
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y6 zener
Abstract: 338 zener 8f zener BZX84C12LT1 zener z12 BZX84C24LT1 izt3 BZX84C18LT1 BZX84C27LT1 BZX84C36LT1
Text: ZENER DIODES - REGULATION IN SURFACE MOUNT NOMINAL ZENER 225mV BREAKDOWN VOLTAGE SOT-23 Cathode Volts Volts No Connection Plastic Case 318 To-236AB REV. : 0 2.7 BZX84C2V7LT1 MMBZ5223BLT1 3.3 BZX84C3V3LT1 MMBZ5226BLT1 5.1 BZX84C5V1LT1 MMBZ5231BLT1 6.8 BZX84C6V8LT1
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Original
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225mV
OT-23
To-236AB
MMBZ5223BLT1
BZX84C3V3LT1
MMBZ5226BLT1
BZX84C5V1LT1
MMBZ5231BLT1
BZX84C6V8LT1
MMBZ5235BLT1
y6 zener
338 zener
8f zener
BZX84C12LT1
zener z12
BZX84C24LT1
izt3
BZX84C18LT1
BZX84C27LT1
BZX84C36LT1
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PDF
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Untitled
Abstract: No abstract text available
Text: BZX84C2V4 - BZX84C39 350mW Surface Mount Zener Diode Pb RoHS SOT-23 COMPLIANCE Features Planar die construction 350 mW power dissipation Zener voltages from 2.4V – 39V Ideally suited for automated assembly processes Mechanical Data
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Original
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BZX84C2V4
BZX84C39
350mW
OT-23
OT-23,
J-STD-020A
MIIL-STD-202,
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PDF
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