ksd2043
Abstract: No abstract text available
Text: SDZ5V1F Semiconductor Zener Diode Features • Compact type • Radiation size 1.6mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ5V1F Marking Package Code Z2 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC
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OT-23F
KSD-2043-000
ksd2043
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Untitled
Abstract: No abstract text available
Text: SDZ5V1 Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. Marking SDZ5V1 Package Code Z2 SOT-23 Outline Dimensions unit : mm 2.20~2.60 1.20~1.40 2.80~3.00
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OT-23
KSD-D5C003-000
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Untitled
Abstract: No abstract text available
Text: SDZ5V1F Semiconductor Zener Diode Features • Compact type • Radiation size 1.6mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. Marking SDZ5V1F Package Code Z2 SOT-23F Outline Dimensions unit : mm 2.30~2.50 1.50~1.70 1.90 Typ.
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OT-23F
KSD-D5C005-000
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marking code z2
Abstract: No abstract text available
Text: SDZ5V1D Semiconductor Zener Diode Features • Compact type • Radiation size 1.25mm x 1.7mm • Surface mount lead configuration Ordering Information Type NO. Marking Package Code SDZ5V1D Z2 SOD-323 Outline Dimensions unit : mm 1.15~1.35 0.35 Max. 2.35~2.65
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OD-323
KSD-D6C003-000
marking code z2
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SDZ5V1D
Abstract: transistor C013 marking code z2
Text: SDZ5V1D Semiconductor Zener Diode Features • Compact type • Radiation size 1.25mm x 1.7mm • Surface mount lead configuration Ordering Information Type NO. Marking Package Code SDZ5V1D Z2 SOD-323 unit : mm 1.25±0.1 0.3~0.35 Outline Dimensions 2.5±0.1
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OD-323
KSD-C013-000
SDZ5V1D
transistor C013
marking code z2
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Untitled
Abstract: No abstract text available
Text: KL SMD TSS KL SERIES OUTLINE DIMENSIONS KL3Z18 1.5 00 Z2 18V30A 2.5 Package : 1F ロット記号（例） 品名 クラス（略号） 1.2 1.2 0.1 2.0 0.2 0.9 5.0 単位：mm Web For details of outline dimensions, refer to our web site or the Semiconductor Short Form Catalog. As for the marking, refer to
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KL3Z18
18V30A
30tion
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IC t148
Abstract: IMZ2A marking Y4 2SA1037AK 2SC2412K T108 T148 marking code z2
Text: EMZ2 / UMZ2N / FMY4A / IMZ2A Transistors Power management dual transistors EMZ2 / UMZ2N / FMY4A / IMZ2A !External dimensions (Units : mm) (3) (4) (5) (2) (6) UMZ2N (1) 0.2 (5) (1) (6) (4) 1.25 2.0 (2) 1.3 (3) Tr1 (3) (6) Each lead has same dimensions ROHM : EMT6
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2SA1037AK
2SC2412K
100MHz
50mA/5mA
IC t148
IMZ2A
marking Y4
T108
T148
marking code z2
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marking code z2
Abstract: 2SA1037AK 2SC2412K T108 T148 2SC2412 T1483
Text: EMZ2 / UMY4N / UMZ2N / FMY4A / IMZ2A Transistors Power management dual transistors EMZ2 / UMY4N / UMZ2N / FMY4A / IMZ2A zFeatures 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. zExternal dimensions (Units : mm) (3) 0.22 (4) (5)
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2SA1037AK
2SC2412K
100MHz
50mA/5mA
marking code z2
T108
T148
2SC2412
T1483
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2SC2412K
Abstract: 2SA2018 2SA20 marking code z2
Text: EMZ8 / UMZ8N Transistors Power management dual transistors EMZ8 / UMZ8N !External dimensions (Units : mm) (5) (6) (5) 0.5 1.25 (6) 2.0 1.3 (3) (1) (6) (4) 0.65 UMZ8N (2) Tr1 0.65 (1) 0.2 Tr2 Each lead has same dimensions ROHM : EMT6 EIAJ : (4) (2) (1) (5)
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2SA2018
2SC2412K
SC-88
100MHz
50mA/5mA
2SA20
marking code z2
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din 82
Abstract: DIN 82-Rge Rge 10-din 82 630 207 Souriau cross reference 8A10 AF5A
Text: souriau 8A10 Series Description Applications • Audio-miniature connectors with 10 contacts especially designed for transmission of very low current • Bayonet locking system • Solder or straight spills contacts • 5 different orientations • Sealed connector in unmated or mated
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from10
din 82
DIN 82-Rge
Rge 10-din 82
630 207
Souriau cross reference
8A10
AF5A
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din 82
Abstract: 8A10 AF3C AB4C 669-o 10AC2 AF5A af3a
Text: 8A10 Series Description Applications • Audio-miniature connectors with 10 contacts especially designed for transmission of very low current • Bayonet locking system • Solder or straight spills contacts • 5 different orientations • Sealed connector in unmated or mated
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from10
din 82
8A10
AF3C
AB4C
669-o
10AC2
AF5A
af3a
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2sc2412k smt6
Abstract: umz2n 2SA1037AK 2SC2412K T108 T148
Text: EMZ2 / UMZ2N / FMY4A / IMZ2A Transistors Power management dual transistors EMZ2 / UMZ2N / FMY4A / IMZ2A !External dimensions (Units : mm) (3) (4) (5) (2) (6) 0.5 IMZ2A (4) (5) (6) Each lead has same dimensions ROHM : EMT6 (6) (3) (2) (1) UMZ2N (5) (5) Tr1
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SC-88
SC-74A
2sc2412k smt6
umz2n
2SA1037AK
2SC2412K
T108
T148
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2SC2412K
Abstract: 2sc2412k smt6 2SA1037AK T108 T148
Text: UMY4N / UMZ2N / FMY4A / IMZ2A Transistors Power management dual transistors UMY4N / UMZ2N / FMY4A / IMZ2A (1) (5) 1.3 (2) 0.2 (4) UMY4N (3) !External dimensions (Units : mm) 0.65 0.65 !Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a UMT or SMT package.
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2SA1037AK
2SC2412K
120mW
200mW
SC-88A
100MHz
50mA/5mA
2sc2412k smt6
T108
T148
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Untitled
Abstract: No abstract text available
Text: EMZ8 / UMZ8N Transistors Power management dual transistors EMZ8 / UMZ8N !External dimensions (Units : mm) (5) (6) (5) 0.5 1.25 (6) 2.0 1.3 (3) (1) (6) (4) 0.65 UMZ8N (2) Tr1 0.65 (1) 0.2 Tr2 Each lead has same dimensions ROHM : EMT6 EIAJ : (4) (2) (1) (5)
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2SA2018
2SC2412K
SC-88
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567 tone
Abstract: 100B2R7CP500X 100B120JP500X 100B430JP500X 100B4R7CP500X A113 C1210C104K5RACTR MW4IC001NR4 RO4350 T491X226K035AS
Text: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s
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MW4IC001N
MW4IC001NR4
MW4IC001N
567 tone
100B2R7CP500X
100B120JP500X
100B430JP500X
100B4R7CP500X
A113
C1210C104K5RACTR
MW4IC001NR4
RO4350
T491X226K035AS
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smd transistor marking z3
Abstract: smd transistor marking j8 MOSFET marking Z4 transistor 6 pin SMD Z2 smd transistor marking z8 freescale semiconductor body marking smd transistor marking j6 Z9 TRANSISTOR SMD 465B MRF18090A
Text: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 7, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AR3
smd transistor marking z3
smd transistor marking j8
MOSFET marking Z4
transistor 6 pin SMD Z2
smd transistor marking z8
freescale semiconductor body marking
smd transistor marking j6
Z9 TRANSISTOR SMD
465B
MRF18090A
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Untitled
Abstract: No abstract text available
Text: MW4IC001MR4 Rev. 4, 5/2006 Freescale Semiconductor Technical Data Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MW4IC001MR4
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MW4IC001MR4
MW4IC001NR4.
MW4IC001M
MW4IC001MR4
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J293
Abstract: IC 2703
Text: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s
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MW4IC001N
MW4IC001NR4
MW4IC001N
J293
IC 2703
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF18090B Rev. 7, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090B
MRF18090BR3
MRF18090BSR3
MRF18090BR3
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smd transistor marking j6
Abstract: SMD Transistor z6 C5 MARKING TRANSISTOR transistor 6 pin SMD Z2 marking Z4 smd z5 transistor transistor smd z9 Z9 TRANSISTOR SMD 465B BC847
Text: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from
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MRF18090B
MRF18090BR3
MRF18090BSR3
MRF18090BR3
smd transistor marking j6
SMD Transistor z6
C5 MARKING TRANSISTOR
transistor 6 pin SMD Z2
marking Z4
smd z5 transistor
transistor smd z9
Z9 TRANSISTOR SMD
465B
BC847
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567 tone
Abstract: marking us capacitor pf l1 marking Z4 100B120JP500X 100B2R7CP500X 100B430JP500X 100B4R7CP500X A113 C1210C104K5RACTR MW4IC001MR4
Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 4, 5/2006 Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MW4IC001MR4
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MW4IC001MR4
MW4IC001NR4.
MW4IC001M
MW4IC001MR4
567 tone
marking us capacitor pf l1
marking Z4
100B120JP500X
100B2R7CP500X
100B430JP500X
100B4R7CP500X
A113
C1210C104K5RACTR
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PDF
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diode smd marking Z2
Abstract: diode Z2 018 SMD MARKING CODE Z2 diode marking z2 marking code z2 esdaxlc6
Text: ESDAXLC6-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet preliminary data Features • Bidirectional device ■ Extra low diode capacitance: 0.4 pF ■ Low leakage current ■ 0201 SMD package size compatible ■ Ultra small PCB area: 0.18 mm2
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ST0201
diode smd marking Z2
diode Z2 018
SMD MARKING CODE Z2
diode marking z2
marking code z2
esdaxlc6
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4vz2
Abstract: tektronix 2201 1N6319 tektronix 4081 ci 4081 11N6 1N6309D 1N6309 44e 117 1N6309US
Text: NIL SPECS 44E D j The documentation and process conversion | measures necessary to comply with this j revision shall be completed by 21 Mar 94. l- • O G D O IE S 0 0 3 3 77 5 T «MILS i- 1 | INCH-P0UND | j | | 1
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OCR Scan
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MIL-S-19500/533D
MIL-S-19500/533C
1N6309
1N6355;
1N6309US
1N6336US;
MIL-S-19500
4vz2
tektronix 2201
1N6319
tektronix 4081
ci 4081
11N6
1N6309D
44e 117
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Untitled
Abstract: No abstract text available
Text: r 6 3 6 7 2 5 5 M O TO RO LA S C D IO D E S / O P T O Tfi 980 78628 DE|b3b7HS5 P _ T - 0 7-/9 DOTahEâ t T -fH l SOT-23 D IO D E S (continued) Zener Diodes (continued) Pinout: 1-Anode, 2-NC, 3-Cathode VZ i Volts Vz2 Volts V Z3 Volts «1 : iz mA <Z2 1 1
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OCR Scan
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OT-23
BV2109
BV3102
BV409
MMBV432L
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