Untitled
Abstract: No abstract text available
Text: Document Number: MMG20271H Rev. 0, 12/2010 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271HT1 High Linearity Amplifier The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE,
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MMG20271H
MMG20271HT1
MMG20271H
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MMG20271H
Abstract: GRM155R61A104K01D is680 ERJ2GE0R00X Yageo part marking GJM1555C1H1R5BB01D chip capicitor MMG20271HT1 0402CS-1N0XGL marking Z4 QFN
Text: Freescale Semiconductor Technical Data Document Number: MMG20271H Rev. 0, 12/2010 Enhancement Mode pHEMT Technology E-pHEMT MMG20271HT1 High Linearity Amplifier The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE,
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MMG20271H
MMG20271HT1
MMG20271H
GRM155R61A104K01D
is680
ERJ2GE0R00X
Yageo part marking
GJM1555C1H1R5BB01D
chip capicitor
MMG20271HT1
0402CS-1N0XGL
marking Z4 QFN
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GRM188R60J106ME47
Abstract: 37Z6 FR408
Text: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station
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MMA20312BV
MMA20312BVT1
MMA20312BV
GRM188R60J106ME47
37Z6
FR408
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Untitled
Abstract: No abstract text available
Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT CASE 1483-01 QFN 3x3
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MMG5004N
MMG5004NR2
MMG5004N
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Untitled
Abstract: No abstract text available
Text: Document Number: MMA20312BV Rev. 0, 8/2011 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station
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MMA20312BV
MMA20312BVT1
MMA20312BV
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station
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MMA20312BV
MMA20312BVT1
MMA20312BV
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FR408
Abstract: FR-408 06035J100GBS GRM188R71H104KA93 GRM188R60J106ME47 06033J220GBS AN1955 z137 C18 QFN 06035J4R7BBS
Text: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 0, 8/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station
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MMA20312BV
MMA20312BVT1
MMA20312BV
FR408
FR-408
06035J100GBS
GRM188R71H104KA93
GRM188R60J106ME47
06033J220GBS
AN1955
z137
C18 QFN
06035J4R7BBS
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ma01 transistor
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1, 3/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier
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MMA20312B
MMA20312BT1
ma01 transistor
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FR408
Abstract: 06035J100GBS 25c2625 MARKING HBT AN1955 GRM188R71H104KA93 06035J5R6BBS RR0816Q-121-D MMA20312 MMA20312BT1
Text: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 0, 10/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier
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MMA20312B
MMA20312BT1
MMA20312B
FR408
06035J100GBS
25c2625
MARKING HBT
AN1955
GRM188R71H104KA93
06035J5R6BBS
RR0816Q-121-D
MMA20312
MMA20312BT1
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GRM188R71H104KA93
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.1, 3/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier
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MMA20312B
MMA20312BT1
GRM188R71H104KA93
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2100 WCDMA repeater circuit
Abstract: FR408 z137
Text: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.2, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier
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MMA20312B
MMA20312BT1
2100 WCDMA repeater circuit
FR408
z137
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.2, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier
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MMA20312B
MMA20312BT1
MMA20312B
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T3255-5
Abstract: No abstract text available
Text: 19-0534; Rev 0; 5/06 16-Output PWM LED Drivers for Message Boards Features The MAX6972/MAX6973 precision current-sinking, 16-output PWM LED drivers drive red, green, and/or blue LEDs for full-color graphic message boards and video displays. Each output has an individual 12-bit MAX6972
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16-Output
MAX6972/MAX6973
12-bit
MAX6972)
14-bit
MAX6973)
T3255-5
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GC-IP2000
Abstract: DATASHEET OF IC 741 PR4401 Photodiode-Array GC-IP200 GP-IP2000 PR4402 QFN56-package PR-44025-00 GC-IP1000
Text: GC-IP2000 Datasheet Version: 1.3 Date: 26.03.2010 GEMAC – Gesellschaft für Mikroelektronikanwendung Chemnitz mbH Zwickauer Strasse 227 • 09116 Chemnitz · Germany Telephone: +49 371 3377 – 0 · Telefax: +49 371 3377 – 272 E-mail: [email protected] · Web: www.gemac-chemnitz.de
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GC-IP2000
80mVpp
0x0400
0x0000
20MHz,
20MHz
GC-IP2000
DATASHEET OF IC 741
PR4401
Photodiode-Array
GC-IP200
GP-IP2000
PR4402
QFN56-package
PR-44025-00
GC-IP1000
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Untitled
Abstract: No abstract text available
Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT ARCHIVE INFORMATION
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MMG5004N
MMG5004NR2
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smd diode J476
Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
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DL110/D
smd diode J476
VIPER L2A RoHS
Viper L2A
mmic amplifier marking code N10
mosfet j279
MRF 966 Mesfet
PIN diode MACOM SPICE model
NCR 2400 SMA DATASHEET Datasheet
MRF 899
smd wb3
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TV booster diagram
Abstract: mhw* 820-1 DATASHEET pcb assembly 85501 application circuits of ic 74121 MHW6342TN motorola 18310 MHL9236MN DL210 010485 GP 809 DIODE
Text: RF Linear Amplifiers Freescale Semiconductor Device Data DL210 Rev. 3 3/2007 RF Product Portfolio freescale.com/rf Freescale Semiconductor offers RF Solutions a broad portfolio of RF products that utilize technologies such as LDMOS, GaAs, SiGe:C, RF CMOS
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DL210
TV booster diagram
mhw* 820-1 DATASHEET
pcb assembly 85501
application circuits of ic 74121
MHW6342TN
motorola 18310
MHL9236MN
DL210
010485
GP 809 DIODE
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2a258 transistor
Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
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DL110/D
2a258 transistor
Fuji Electric tv schematic diagram
smd transistor WB3
VHF FM PLL schematic mc145152
Motorola transistor smd marking codes
MARK 176 SOT363 RF
Note AR164, Motorola RF Device Data, Volume II, D
tip off 0401 mosfet transistor
cordless phone Transceiver IC
semiconductors cross index
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circuit diagram of door lock system
Abstract: ISL32172E ISL32174E ISL32179E ISL32272E ISL32274E ISL32372E ISL32374E 79EFRZ
Text: ISL32172E, ISL32272E, ISL32372E, ISL32174E, ISL32274E, ISL32374E, ISL32179E Data Sheet December 16, 2008 QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, Low Power, RS-422 Transmitters The Intersil ISL32x7xE are ±16.5kV IEC61000-4-2 ESD Protected, 3.0V to 5.5V powered, QUAD transmitters for
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ISL32172E,
ISL32272E,
ISL32372E,
ISL32174E,
ISL32274E,
ISL32374E,
ISL32179E
RS-422
ISL32x7xE
IEC61000-4-2
circuit diagram of door lock system
ISL32172E
ISL32174E
ISL32179E
ISL32272E
ISL32274E
ISL32372E
ISL32374E
79EFRZ
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Untitled
Abstract: No abstract text available
Text: ISL32172E, ISL32272E, ISL32372E, ISL32174E, ISL32274E, ISL32374E, ISL32179E Data Sheet March 13, 2013 QUAD, ±16.5kV ESD Protected, 3.0V to 5.5V, Low Power, RS-422 Transmitters The Intersil ISL32x7xE are ±16.5kV IEC61000-4-2 ESD Protected, 3.0V to 5.5V powered, QUAD transmitters for
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ISL32172E,
ISL32272E,
ISL32372E,
ISL32174E,
ISL32274E,
ISL32374E,
ISL32179E
FN6824
RS-422
ISL32x7xE
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marking Z4
Abstract: marking Z1 6-pin marking Z3 6-pin marking Z1 6pin 12Mhz crystal oscillator
Text: ASM3P2274A November 2005 rev 0.3 Low Power 4X Multiplier EMI Reduction IC Features The ASM3P2274A uses the most efficient and optimized modulation profile approved by the FCC and is Generates a 4X EMI optimized clock signal at the implemented by using a proprietary all digital method.
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12MHz
30MHz
66MHz
TSOT-23
ASM3P2274A
ASM3P2274A
marking Z4
marking Z1 6-pin
marking Z3 6-pin
marking Z1 6pin
12Mhz crystal oscillator
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panasonic GC 5.5v 1.0f
Abstract: LELON VE
Text: LTC3122 15V, 2.5A Synchronous Step-Up DC/DC Converter with Output Disconnect Description Features VIN Range: 1.8V to 5.5V, 500mV After Start-Up Output Voltage Range: 2.2V to 15V 800mA Output Current for VIN = 5V and VOUT = 12V Output Disconnects from Input When Shut Down
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500mV
800mA
12-Lead,
LTC3122
700mV
3122fa
com/LTC3122
panasonic GC 5.5v 1.0f
LELON VE
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Untitled
Abstract: No abstract text available
Text: Supertex inc. MD0201 4 X 4 Cross-Point Analog Switch with ±130V T/R Switches Features ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► 16 cross-point analog echo signal matrix switches ±130V 20ns T/R switch built-in for each channel
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MD0201
100MHz
-55dB
-65dB
20MHz
DSFP-MD0201
NR112613
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Untitled
Abstract: No abstract text available
Text: Supertex inc. MD0201 4 X 4 Cross-Point Analog Switch with ±130V T/R Switches Features ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► 16 cross-point analog echo signal matrix switches ±130V 20ns T/R switch built-in for each channel
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MD0201
100MHz
-55dB
-65dB
20MHz
DSFP-MD0201
NR011314
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