KL SN 102 94v-0
Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results
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rca 17417
Abstract: TA8445 TA8723 TA8722 2N6476 2N6109 equivalent TA8210 2N6474 2N6106-2N6111 TA7743
Text: ÏÏÏ 3875081 G E SOLID DE | 3 ñ 7 S G ñ l STATE 01E 17415 DD1741S O D_ r T 3 _ _ General-Purpose Power Transistors - File N um ber 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Epitaxial-Base, Silicon
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2N6106-2N6111,
2N6288-2N6293,
2N6473-2N6476
RCA-2N6106-2N6111,
2N6473-2N6476
2N6473,
2N6474*
rca 17417
TA8445
TA8723
TA8722
2N6476
2N6109 equivalent
TA8210
2N6474
2N6106-2N6111
TA7743
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2N3441
Abstract: VK 27 CT 2n6264
Text: File Number 2N3441, 2N6263, 2N6264 529 HARRIS SEMICOND SECTOR SbE D M3Q2271 D04Ü425 TT4 * H A S -T -3 3 -C D / Medium-Power Silicon N-P-N Transistors Rugged Devices for Intermediate, Power Applications in Industrial and Commercial Equipment Features: TERMINAL DESIGNATIONS
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2N3441,
2N6263,
2N6264
M3Q2271
2N6264.
2N3441
O-213AA
2N6264
VK 27 CT
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RCA8863C
Abstract: T022
Text: File N um ber 2N6771, 2N6772, 2N6773 1292 1-A S w it c h M a * VERSAWATT Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications TERMINAL DESIGNATIONS Features: FLANGE • High-temperature parameters guaranteed
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2N6771,
2N6772,
2N6773
O-220AB
2N6773*
RCA8863C
T022
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HFET-1001
Abstract: HFET-5001
Text: ÍNEW H EW LE T T ^ j j P A CKA RD COMPONENTS MICROWAVE GaAS FET CHIP HFET- 5001 Features HIGH PidB LINEAR POWER 18.5 dBm Typical at 12 GHz 19.5 dBm Typical at 10 GHz 21.0 dBm Typical at 4 GHz with 11.0 dB Associated Gain SUITABLE FOR BROADBAND APPLICATIONS
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HFET-5001
HFET-1001
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MJ2955
Abstract: BDX18 J BDX18 BDX18A
Text: G E SOLID STATE 38 75 081 01 G E SOL ID S TATE Pro Electron Power Transistors _ ]>F| 3fl7S0fll 0017557 T 0 1 Ë" 17557 D r - i J ' - 2-? BDX18, MJ2955 File Number Silicon P -N -P Epitaxial-Base High-Pow er Transistors 994 TERMINAL DESIGNATIONS R u g g e d , B ro ad ly A p p lic a b le D evices
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BDX18,
MJ2955
O-220AB
RCA-BDX18
MJ2955
BDX18
J BDX18
BDX18A
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ca3725
Abstract: 2N6738 2N6740
Text: 2N6738. 2N6739. 2N6740 H A RR IS SEPIICON] S E C T O R 1291 M3Ü E S7 1 QG4Gb3fl 414 H H A S File Number SbE D 5-A S w i t c h M a j f Power Transistors •^ 3 5 - / 9 TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage
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2N6738.
2N6739.
2N6740
92CS-39969
TQ-220AB
2N6738,
2N6739,
2N6740*
ca3725
2N6738
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how to interface optocoupler with triac
Abstract: triac snubber calculation optocoupler MTBF calculation triac dc motor control circuits snubber full bridge SCR opto DRIVER 12 amp triac heat control triac snubber varistor 2 amp triac driver opto MOC2A40
Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1511 Applications of the MOC2A40 and MOC2A60 Series POWER OPTO ISOLATORS Prepared by: Horst Gempe Discrete Applications Engineering INTRODUCTION Electronic controls of AC pow er loads based on m icropro cessor controllers, digital or linear sensor circuits are
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AN1511
MOC2A40
MOC2A60
how to interface optocoupler with triac
triac snubber calculation
optocoupler MTBF calculation
triac dc motor control circuits
snubber full bridge
SCR opto DRIVER
12 amp triac heat control
triac snubber varistor
2 amp triac driver opto
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MGF7003
Abstract: maxim curve tracer MGF-7003
Text: MITSUBISHI {DISCRETE S O TI ]>Er|L:24cia5ti QQlQlSb 7 T o T- 31-3S M IT SU BISH I SEMICONDUCTOR<GaAs M M IO MGF7003 « -aie" s»*'“ « S 'í « 1- * 00\ a_Ü“ í^ m ' ’15 N S“Í Ca % G aA s M O N O LIT H IC M IC R O W A V E IC DESCRIPTIO N O UTLINE DRAW ING
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31-3S
MGF7003
MGF7003
maxim curve tracer
MGF-7003
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MGF2124
Abstract: x-band microwave fet
Text: M ITSUBISHI {DISCRETE SC} TL dF J ODIOOS *ï MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2124 6249829 MITSUBISHI <DISCRETE SC I 91D 10093 DT3<?-<!>5 FOR MICROWAVE PO W ER AM PLIFIERS I DESCRIPTION The M G F 2 1 2 4 is designed fo r power amplifiers and oscil
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MGF2124
MGF2124
x-band microwave fet
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TM 1628 IC
Abstract: MGF2148 1D10101 IC TM 1628
Text: MITSUBISHI {DISCRETE S O TI D eTI DG1G1Q0 S 1 ~ M IT S U B IS H I SE M IC O N D U C T O R <GaAs FET> _ 6249829 MITSUBISHI D I S C R E T E SC 91 D M G F214 8 DT'5?-ö7 10100 FOR MICROWAVE POWER AMPLIFIERS DESCRIPTION The M G F 2 1 4 8 is designed for power amplifiers and oscil
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lt 6249
Abstract: MGF1601 6249
Text: MITSUBISHI {DISCRETE S O ti oFIbSM TâST aoioa?b i M IT SU B ISH I SEMICONDUCTOR <GaAs FET> M G F 1 G 0 1 0 2 4 9 82 9 MITSUBISHI 9 1 D 10076 DISCRETE SC D FO R M IC R O W A V E P O W E R A M P L IF IE R S DESCRIPTION The M G F 1 6 0 1 , medium-power G aA s F E T with an Nchannel Sc h ottk y gate,lis designed for use in S- to X-band
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TIP60
Abstract: No abstract text available
Text: TIP47, TIP48, TIP49, TIP50 HARRIS SEMICOND SECTOR File Number SbE D • 978 4302271 OOMO^bO b03 * H A S High-Voltage Silicon N-P-N Transistors 53 -// For High-Speed Switching and Linear-Amplifier Applications Features: ■ VERSAWATT package ■ M aximum safe-area-of-operation curves
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TIP47,
TIP48,
TIP49,
TIP50
TIP50
T0-220AB
92CS-39969
TIP60
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BUV83
Abstract: BUV82
Text: N AMER PHILIPS/DISCRETE SSE D • aoiöw m BUV82 BUV83 r - 3 3 -1 3 SILICON DIFFUSED POWER TRANSISTORS High voltage, high speed switching npn power transistor in plastic S O T 9 3 envelope, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.
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BUV82
BUV83
BUV83
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2N5130
Abstract: 2N5629 2N5630 2N5631
Text: Qï 3875081 G E SOLID STATE D T W B â T S Ï Ï â ï T G Ï Ï V ? 3^ 3 ” 01E 17393 I D General-Purpose Power Transistors File N u m b e r 1141 2N5629, 2N5630, 2N5631 TERM INAL DESIGNATIONS
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2N5629,
2N5630,
2N5631
cs-i79i6
O-204AA
RCA-2N5629,
2N5630
2N5631
3fl750fll
DD173TS
2N5130
2N5629
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BUV83
Abstract: BUV82 T-33-73
Text: N AMER P H I L I P S / D I S C R E T E SSE D y\nS3' 31 QDlfl^n 4 BUV82 BUV83 r - 3 3 - 13 SILICON DIFFUSED POWER TRANSISTORS High voltage, high speed switching npn power transistor in plastic S O T 9 3 envelope, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.
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BUV82
BUV83
r-33-13
BUV82
T-33-13
7Z92935
EiTj-100
BUV83
T-33-73
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rca ta8405
Abstract: No abstract text available
Text: File Number 680 •7 ^ 3 —/ / HARRIS SEMICOND SECTOR 5bE D • 2N6477, 2N6478 4302571 0D405bl Tib H H A S Medium-Power Silicon N-P-N Transistors TERMINAL DESIGNATIONS For Intermediate Power Applications in Industrial and Commercial Equipment F L A N G E
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2N6477,
2N6478
0D405bl
O-220AB
2N6477
2N5298
2N6477.
2N6478.
0040SbS
rca ta8405
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BUW86
Abstract: BUW87 BUW87A IEC134
Text: BUW86 BUW87 BUW87A DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change w ithout notice. bbS3T31 G Q n a i 3 5 N AMER PHI LI PS /D ISCR ET E T - 3 3 - / / ESE D SILICON DIFFUSED POWER TRANSISTORS High-speed switching npn transistors in a metal envelope intended fo r use in converters, inverters,
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bbS3T31
BUW86
BUW87
BUW87A
T-33-II
BUW86
7Z3S69S
BUW87
BUW87A
IEC134
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2N5416 harris
Abstract: 2N5416 2N5416 RCA 2N5415
Text: T-33-1-7 Power Transistors, 2N5415, 2N5416 HARRIS SEMICOND SECTOR File Number 27E D Silicon P-N-P High-Voltage Planar Transistors • 336 M3Q2271 GDnfl7G T « H A S TERMINAL DESIGNATIONS F o r H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s in M ilita ry , In d u s tria l and
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T-33-1-7
2N5415,
2N5416
M3Q2271
2N5415:
2N344CT
2N5416:
2N343ST
2N5416)
2N5416 harris
2N5416 RCA
2N5415
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TO-213AA Package
Abstract: ZI-49 2N4900 2n4899
Text: . Power Transistors File Num ber 1150 HARRI S S E M I C O N D 2N4898, 2N4899, 2N4900 S E CT OR S7E D 4302271 D0L18H3 7 « H A S :T -3 3 - Silicon P-N-P Medium-Power Transistors I TERMINAL DESIGNATIONS G eneral-Purpose Types for Switching Applications Faatur«*:
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2N4898,
2N4899,
2N4900
D0L18H3
O-213AA
2N4899
2N4900
-213AA
ZI49Z
TO-213AA Package
ZI-49
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CA3725
Abstract: RCA8863C RCA68
Text: SbE D File Number 1292 • 4302E71 DOMDbSl =156 « H A S 2N6771,2N6772,2N6773 HARRIS SEMICOND SECTOR 1-a S w i t c h M a X VERSAWATT Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications TERMINAL DESIGNATIONS
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4302E71
2N6771
2N6772
2N6773
O-220AB
2N6771,
2N6772,
2N6773*
CA3725
RCA8863C
RCA68
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BUS133
Abstract: BUS133A BUS133H TO3 philips
Text: rr • DEVELOPM ENTDATA T his data sheet contains advance Information and specifications are subject to change w ithout notice, ^53=131 0010703 S ■ 11 BUS133 S E R IE S N AMER PHILIPS/DISCRETE 5SE D — T - 3 S - 15SIL IC O N D IFFU SED PO W ER T R A N S IS T O R S
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BUS133
BUS133H
T-33-15
7Z2I43S
BUS133A
TO3 philips
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l7107
Abstract: DIAGRAM OF IC 7106 TCL7107 IC 7107 Pin diagram 1Cl7106 thermometer circuit using 7107 Digital capacitance meter by using IL 7107 N digital thermometer using IC 7106 digital thermometer using IC 7107 Digital amp. meter with 7107
Text: y n y j x i y n 3 /12 D ig it A /D C onverter _ F eatu res The Maxim ICL7106 and ICL7107 are monolithic analog to digital converters. They have very high input imped ances and require no external display drive circuitry. On board active components include polarity and digit driv
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ICL7106
ICL7107
ICL7126
ICL7136
l7107
DIAGRAM OF IC 7106
TCL7107
IC 7107 Pin diagram
1Cl7106
thermometer circuit using 7107
Digital capacitance meter by using IL 7107 N
digital thermometer using IC 7106
digital thermometer using IC 7107
Digital amp. meter with 7107
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Untitled
Abstract: No abstract text available
Text: File Number BUX32, BUX32A, BUX32B 1285 HARRIS SEMICON] SECTOR 6-A S w itc h M a Power Transistors 5 bE » • 43G2271 0G4073fi 3T5 H H A S jf 7 - 3 S - / 9 High-Voltage N-P-N Types for 240 V Off-Line Power Supplies and Other High-Voltage Switching Applications
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BUX32,
BUX32A,
BUX32B
43G2271
0G4073fi
-204AA
BUX32
2N3762
A3725
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