Untitled
Abstract: No abstract text available
Text: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V
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TGF2023-01
TGF2023-01
DC-18
0007-inch
EAR99
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GaAs S2p
Abstract: hemt .s2p
Text: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V
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TGF2023-01
TGF2023-01
DC-18
0007-inch
EAR99
GaAs S2p
hemt .s2p
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PDF
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hemt .s2p
Abstract: TGF2023-01 EAR99 at10GHz
Text: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V
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TGF2023-01
TGF2023-01
DC-18
0007-inch
EAR99
hemt .s2p
EAR99
at10GHz
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PDF
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2SC5801
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Preliminary PA862TD Data Sheet NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES <R> • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801)
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PA862TD
R09DS0032EJ0200
2SC5010,
2SC5801)
S21e2
2SC5010
2SC5801
2SC5801
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NESG3032M14
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
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NESG3032M14
NESG3032M14-A
NESG3032M14
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nesg2101m05-t1-a
Abstract: NESG2101M05-A
Text: A Business Partner of Renesas Electronics Corporation. NESG2101M05 Data Sheet NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • •
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NESG2101M05
R09DS0036EJ0300
NESG2101M05
PU10190EJ02V0DS
nesg2101m05-t1-a
NESG2101M05-A
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PDF
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NESG2101M16
Abstract: NESG2101M16-T3 NESG2101M16-T3-A
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M16
M8E0904E
NESG2101M16
NESG2101M16-T3
NESG2101M16-T3-A
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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NESG2031M16
NESG2031M16
NESG2031M16-A
M8E0904E
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PDF
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Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. NESG2021M05 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • • <R> This device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2021M05
R09DS0034EJ0300
NESG2021M05
PU10188EJ02V0DS
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PDF
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Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. NESG2031M05 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0035EJ0400 Rev. 4.00 Jun 20, 2012 FEATURES • • • • <R> The device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2031M05
R09DS0035EJ0400
NESG2031M05
PU10189EJ03V0DS
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transistor T1J
Abstract: NESG2101M05-T1 NESG2101M05
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M05
PU10190EJ02V0DS
transistor T1J
NESG2101M05-T1
NESG2101M05
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PDF
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S parameters of 5.8 GHz transistor
Abstract: NESG7030M04 T1R rf ZL 58
Text: A Business Partner of Renesas Electronics Corporation. NESG7030M04 Data Sheet R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
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NESG7030M04
R09DS0037EJ0100
NESG7030M04
S parameters of 5.8 GHz transistor
T1R rf
ZL 58
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Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Preliminary NESG3032M14 Data Sheet R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG <R> FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification
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NESG3032M14
R09DS0048EJ0300
NESG3032M14
NESG3032M14-A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications
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NESG2021M16
NESG2021M16-A
M8E0904E
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PA862TD NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES • Low voltage operation <R> • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor
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PA862TD
2SC5010,
2SC5801)
S21e2
R09DS0032EJ0200
2SC5010
2SC5801
PA862TD
PA862TD-T3
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PDF
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NESG3031M05-T1
Abstract: transistor marking T1k ghz NESG3031M05 NESG3031M05-A
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
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NESG3031M05
NESG3031M05-T1
transistor marking T1k ghz
NESG3031M05
NESG3031M05-A
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M16
NESG2101M16
M8E0904E
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
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NESG4030M14
NESG4030M14
NESG4030M14-A
NESG4030M14-T3
NESG4030M14-T3-A
M8E0904E
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PDF
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NESG2021M05
Abstract: NESG2021M05-T1 transistor s2p
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications
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NESG2021M05
PU10188EJ02V0DS
NESG2021M05
NESG2021M05-T1
transistor s2p
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M8E0904E
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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Original
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NESG2101M05
R09DS0036EJ0300
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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Original
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NESG2101M05
R09DS0036EJ0300
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PA862TD NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES • Low voltage operation <R> • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor
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Original
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PA862TD
R09DS0032EJ0200
2SC5010,
2SC5801)
2SC5010
2SC5801
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PDF
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NESG3033M14
Abstract: MCR01MZPJ5R6
Text: A Business Partner of Renesas Electronics Corporation. Preliminary NESG3033M14 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification
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NESG3033M14
NESG3033M14
R09DS0049EJ0300
NESG3032M14.
NESG3033M14-A
MCR01MZPJ5R6
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