c216842
Abstract: No abstract text available
Text: DO NOT SCALE DIMENSIONS - ► IN T H IR D METRIC mm ANGLE P R O JE C T IO N X o 1 \ \ NOTES o TT - - / 1 [ mm. /, b A max. 1 1 , 0 * & PHOSPHORBRONZE - c1 , 6D I A /> \ 8 „5 1 p 2 , 75 1 2,54pm 5n 1 , 25pm MIN. PLA T IN G : # 4 HD/THICKNESS
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C-216842
eq012>
66/edm
c216842
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Untitled
Abstract: No abstract text available
Text: DO NOT SCALE D IM E N S IO N S IN THIRD ANGLE METRIC mm PROJECTION •1 2 , 2 5 - 1 2 ,2 5 S E C T IO N 4 x 2 ,0 = 8 ,0 S E C T IO N B -B B -B 4 9 ,9 20,2 ■21 ,9 8 ,8 7" :x. D liiigiiiiii ii i i i 1 1 ,4 1 0 ,9 5 3 ,3 i ô Ô ■— if X. \j \j u 3 ,7 \
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EH-0816-96
-JUL-00
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valox 420 seo material specification
Abstract: EIA-364-13 EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28
Text: 108-1657-2 Product Specification 23Jul03 Rev A EC 0990-0838-03 Pivot II Connector, Two Pair 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics Two Pair Pivot II Connector. This connector accepts two wires for each wire stuffer pair for power drop in
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23Jul03
TE250F3
valox 420 seo material specification
EIA-364-13
EIA-364-20
EIA-364-21
EIA-364-27
EIA-364-28
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Untitled
Abstract: No abstract text available
Text: BBY 57-02W Silicon Tuning Diode • Excellent linearity • High Q hyperabrupt tuning diode 2 • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation 1 for VCO's in mobile communications equipment VES05991 • For control elements such as TCXOs and VCXOs
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7-02W
VES05991
SCD-80
May-03-1999
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SGP30N60HS
Abstract: SGW30N60HS 3UAT
Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGP30N60HS
SGW30N60HS
P-TO-220-3-1
O-220AB)
P-TO-247-3-1
O-247AC)
O-220AB
Q67040-S4500
SGP30N60HS
SGW30N60HS
3UAT
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SGP15N120
Abstract: Q67040-S4274 Q67040-S4275 Q67040-S4276 SGB15N120 SGW15N120
Text: SGP15N120 SGB15N120 SGW15N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGP15N120
SGB15N120
SGW15N120
P-TO-220-3-1
O-220AB)
P-TO-263-3-2
P-TO-247-3-1
O-263AB)
O-247AC)
O-220AB
SGP15N120
Q67040-S4274
Q67040-S4275
Q67040-S4276
SGB15N120
SGW15N120
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15v 60w smps
Abstract: SGI02N120 SGB02N120 SGD02N120 SGP02N120 SGP02N120 equivalent
Text: SGP02N120, SGD02N120, SGB02N120 SGI02N120 Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGP02N120,
SGD02N120,
SGB02N120
SGI02N120
40lower
P-TO-252-3-1
O-252AA)
P-TO-220-3-1
O-220AB)
P-TO-262-3-1
15v 60w smps
SGI02N120
SGB02N120
SGD02N120
SGP02N120
SGP02N120 equivalent
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smd transistor marking vbg
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y DESCRIPTION BUK205-50Y QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount
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BUK201-50Y
BUK205-50Y
29-May-02)
smd transistor marking vbg
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MOSFET TRANSISTOR SMD MARKING CODE nh
Abstract: smd transistor marking A5
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION BUK108-50DL QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a
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BUK108-50DL
29-May-02)
MOSFET TRANSISTOR SMD MARKING CODE nh
smd transistor marking A5
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TRANSISTOR SMD MARKING CODE spt
Abstract: ta114 Marking Code For SMD Devices SMD PNP MARKING DE PDTA114
Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA114T series PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open Product specification Supersedes data of 1999 Apr 13 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
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PDTA114T
01-May-99)
TRANSISTOR SMD MARKING CODE spt
ta114
Marking Code For SMD Devices
SMD PNP MARKING DE
PDTA114
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS 74ABT16899 74ABTH16899 18-bit latched transceiver with 16-bit parity generator/checker 3-State Product specification Supersedes data of 1997 Mar 28 IC23 Data Handbook Philips Semiconductors 1998 Feb 25 Philips Semiconductors Product specification
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74ABT16899
74ABTH16899
18-bit
16-bit
74ABTH16899
74ABT/H16899
01-Mar-98)
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PDTC143EK
Abstract: PDTC143E
Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 1999 Apr 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;
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PDTC143E
PDTC143ET
PDTC143EU
PDTC143EE
PDTC143EK
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GBK201209T-151Y-N
Abstract: OS13
Text: n 7 T H I S DRAWING JÊL C OPYRIGHT I S U N PU B L IS H E D . 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. 6 4 5 3 2 LOG , 19 ALL R IG H T S R ES E R V E D . GP DI ST REVISIONS 00 DESCRIPTION R E V I S E D PER EC 0 5 1 3 - 0 1 5 7 - 0 3
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21MAY03
2-13-9S
A55DMBDY,
17-JUN-97
amp02202
/home/ssrv026d/dsk01
/dept4120/amp02202/edrnmod
GBK201209T-151Y-N
OS13
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9 pin d type connector
Abstract: SR10
Text: DO NOT SCALE DIMENSIONS 25 THIRD ANGLE METRIC IN m m PROJECTION SECTION A -A A 4 9 , 9- IW I IW I M M m B I B gb u s fw l M W M w A M w a M w r w § B S B IK a ÜQ 0 ,9 5 Ü iiii m Ô - m m m B- ÔI S-ô -Ô - Ô - ra rs - Ô - r w i
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Untitled
Abstract: No abstract text available
Text: BBY 56-03W Silicon Tuning Diode 2 Excellent linearity 1 High Q hyperabrupt tuning diode Low series inductance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread VPS05176 Type Marking
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6-03W
VPS05176
OD-323
May-03-1999
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Untitled
Abstract: No abstract text available
Text: R E V 1S I O N S 930-1I6J-5IP NOTES: I . M A T E R I A L S AND F I N I S H E S : BODY - B R A S S , GOL D O V E R W H I T E B R ON Z E P L A T I N G C O N T A C T - B e C u , GOL D O V E R W H I T E B R ON Z E P L A T I N G INSULATOR - PTFE 2 . ELECTRICAL:
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930-1I6J-5IP,
930-1I6J-5IP
I-May-03
I/28/04
\QMA\930-1
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)
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ELM35603KA-S
ELM35603KA-S
P2204ND5G
O-252-5
May-03-2006
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBUSHED. | RELEASED FOR PUBLICATION - ,- 1 2 . LOC ALL RIGHTS RESERVED. DIST CM 00 R E V IS IO N S 1 LTR DATE D A 0 .3 8 2. MAX C U T -O F F A D E T A IL A 5 .0 8 [ . 2 0 0 ] M IN L O C A L IZ E D G O L D PLATE AREA 3 .4 3 r 2 . 92^
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0G3B-0381-03
21MAY2003
31MAR2000
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Untitled
Abstract: No abstract text available
Text: コンプリメンタリーパワー MOSFET ELM35603KA-S •概要 ■特長 ELM35603KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=10A
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ELM35603KA-S
P2204ND5G
O-252-5
May-03-2006
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jrc 2901
Abstract: 20pin IC AL 6001 2901 jrc U435 MOROCCO 0X00 DIP20 HE10 SO20 ST7LITE10 ST7LITE15
Text: ST7LITE1 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 4 TIMERS, SPI DATASHEET Memories – 4 Kbytes single voltage extended Flash XFlash Program memory with read-out protection, In-Circuit Programming and In-Application programming (ICP and IAP). 10K write/
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SKW30N60HS
Abstract: IGBT SKW30N60HS Q67040-S4503
Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SKW30N60HS
P-TO-247-3-1
O-247AC)
O-247AC
Q67040-S4503
May-03
SKW30N60HS
IGBT SKW30N60HS
Q67040-S4503
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SMD transistor MARKING CODE 43
Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D
Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 31 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistor;
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PDTC114E
resistor-equipPDTC114EE
PDTC114EU
PDTC114EEF
SMD transistor MARKING CODE 43
TRANSISTOR SMD MARKING CODE A1
TRANSISTOR SMD MARKING CODE 42
SMD Transistor A1
TC114E
smd TRANSISTOR code marking 36
smd TRANSISTOR code marking 013
Transistor SMD marking code NV
smd transistor 023
TRANSISTOR SMD MARKING CODE X D
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Transient Voltage Suppressor diode application no
Abstract: rz 7888
Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D184 BZA109 9-fold ESD transient voltage suppressor Product specification Supersedes data of 1997 Oct 27 File under Discrete Semiconductors, SC01 1997 Dec 01 Philips Semiconductors Product specification
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M3D184
BZA109
IEC1000-4-2
OT163-1
13-Feb-03)
Transient Voltage Suppressor diode application no
rz 7888
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cfldr64
Abstract: AC97 EP9312 cfstr64
Text: 5/29/03 Errata: EP9312 Rev D0 Reference EP9312 Data Sheet revision DS515PP4 dated May ‘03 AC97 Description In certain configurations, the AC97 FIFO will generate spurious writes to some channels, thus corrupting the output audio sample stream. The configurations with potential failures are listed as follows:
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EP9312
DS515PP4
May-03
ER515B1
cfldr64
AC97
cfstr64
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