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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HY62256B-I Series “H Y U N D A I 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit	OCR Scan	PDF	HY62256B-I 05-11-MAY95 Mb75Dflfi HY62256BLP-I HY62256BLLP-I HY62256BU-I
Untitled Abstract: No abstract text available Text: HYUNDAI HYM584000B Series SEMICONDUCTOR 4M xS-blt CMOS DRAM MODULE PRELIM IN ARY DESCRIPTION The HYM584000B is a 4M x 8-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22 iF decoupling capacitors are mounted under each DRAMs.	OCR Scan	PDF	HYM584000B HY5117400 HYM584000BM/BLM 4b750flfl 00Qlfl40 C05-00-MAY93 1BC05-00-
Untitled Abstract: No abstract text available Text: •HYUNDAI H Y 638100 128KX 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a high-speed 131,072 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techni	OCR Scan	PDF	128KX HY638100 15/17/20/25ns 10G01 -11-MAY94 4b750flfl 400mil 1DG01-11-MAY94
Untitled Abstract: No abstract text available Text: •HYUNDAI SEMICONDUCTOR HYM540100 Series 1M x 40-bit C M O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM540100 is a 1M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY514400A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22/uF decoupling capacitor is mounted for each DRAM.	OCR Scan	PDF	HYM540100 40-bit HY514400A 22/uF HYM540100M/LM HYM540100MG/LMG 0002G7fl