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    MB85R Price and Stock

    KAGA FEI America Inc MB85RC256VPNF-G-JNERE1

    IC FRAM 256KBIT I2C 1MHZ 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB85RC256VPNF-G-JNERE1 Reel 24,000 1,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $3.64277
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    KAGA FEI America Inc MB85RS512TPNF-G-JNERE1

    IC FRAM 512KBIT SPI 30MHZ 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB85RS512TPNF-G-JNERE1 Digi-Reel 4,966 1
    • 1 $6.81
    • 10 $6.043
    • 100 $5.3626
    • 1000 $4.9319
    • 10000 $4.9319
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    MB85RS512TPNF-G-JNERE1 Cut Tape 4,966 1
    • 1 $6.81
    • 10 $6.043
    • 100 $5.3626
    • 1000 $4.9319
    • 10000 $4.9319
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    MB85RS512TPNF-G-JNERE1 Reel 4,500 1,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $4.65727
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    KAGA FEI America Inc MB85RQ4MLPF-G-BCERE1

    IC FRAM 4MBIT SPI/QUAD I/O 16SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB85RQ4MLPF-G-BCERE1 Digi-Reel 4,356 1
    • 1 $13.97
    • 10 $12.401
    • 100 $11.0025
    • 1000 $10.48992
    • 10000 $10.48992
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    MB85RQ4MLPF-G-BCERE1 Cut Tape 4,356 1
    • 1 $13.97
    • 10 $12.401
    • 100 $11.0025
    • 1000 $10.48992
    • 10000 $10.48992
    		Buy Now
    MB85RQ4MLPF-G-BCERE1 Reel 4,000 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.75
    • 10000 $8.75
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    KAGA FEI America Inc MB85RS64TPNF-G-JNERE2

    IC FRAM 64KBIT SPI 10MHZ 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB85RS64TPNF-G-JNERE2 Cut Tape 3,082 1
    • 1 $2.89
    • 10 $2.561
    • 100 $2.273
    • 1000 $2.0907
    • 10000 $2.0907
    		Buy Now
    MB85RS64TPNF-G-JNERE2 Digi-Reel 3,082 1
    • 1 $2.89
    • 10 $2.561
    • 100 $2.273
    • 1000 $2.0907
    • 10000 $2.0907
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    MB85RS64TPNF-G-JNERE2 Reel 2,600 1,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.97453
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    KAGA FEI America Inc MB85RS1MTPW-G-APEWE1

    IC FRAM 1MBIT SPI 40MHZ 8WLP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MB85RS1MTPW-G-APEWE1 Reel 2,500 1,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $4.25347
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    Find more MB85R price and stock on Findchips.com

    MB85R Datasheets (137)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB85R1001 Fujitsu Memory FRAM CMOS 1 M Bit (128 K x 8) Original PDF
    MB85R1001ANC-GE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 150NS 48TSOP Original PDF
    MB85R1001PFTN Fujitsu NVRAM, Memory FRAM, 1 M Bit (128 K x 8) Original PDF
    MB85R1001PFTN-GE1 Fujitsu 1 M Bit (128 K x 8) Original PDF
    MB85R1002 Fujitsu Memory FRAM CMOS 1 M Bit (64 K x16) Original PDF
    MB85R1002ANC-GE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 150NS 48TSOP Original PDF
    MB85R1002BGT-GE1 Fujitsu Memory FRAM CMOS 1 M Bit (64 K x 16) Original PDF
    MB85R1002PFTN Fujitsu NVRAM, FRAM, Parallel, 3.3V Supply Voltage, 48-Pin Original PDF
    MB85R1002PFTN-GE1 Fujitsu Memory FRAM CMOS 1 M Bit (64 K x 16) Original PDF
    MB85R2001 Fujitsu Memory FRAM CMOS 2 M Bit (256 K x 8) Original PDF
    MB85R2001PFTN-GE1 Fujitsu Memory FRAM CMOS 2 M Bit (256 K x 8) Original PDF
    MB85R2002 Fujitsu Memory FRAM CMOS 2 M Bit (128 K x 16) Original PDF
    MB85R2002PFTN-GE1 Fujitsu Memory FRAM CMOS 2 M Bit (128 K x 16) Original PDF
    MB85R256 Fuji Electric Memory Fram(ferroelectric Random Access Memory) Original PDF
    MB85R256 Fujitsu FRAM Original PDF
    MB85R256A Fujitsu FRAM Original PDF
    MB85R256APF Fujitsu Original PDF
    MB85R256FPFCN-G-BNDE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 256KBIT 150NS 28TSOP Original PDF
    MB85R256FPF-G-BNDE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 256KBIT 150NS 28SOP Original PDF
    MB85R256FPF-G-BND-ERE1 Fujitsu Electronics America Integrated Circuits (ICs) - Memory - IC FRAM 256K PARALLEL 28SOP Original PDF
    ...

    MB85R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-6v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00013-6v0-E MB85RC64V MB85RC64V

    Untitled

    Abstract: No abstract text available
    Text: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.


    Original     		PDF MB85R2001/MB85R2002 A0-16 MB85RS256 256K-bit MB85R4xxx MB85R2001 MB85R2002 MB85R1001

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00015-4v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64V • DESCRIPTION MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00015-4v0-E MB85RS64V MB85RS64V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00023-1v0-E Memory FRAM 2 M 256 K x 8 Bit SPI MB85RS2MT • DESCRIPTION MB85RS2MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00023-1v0-E MB85RS2MT MB85RS2MT

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00006-3v0-E FRAM MB85R1002A MB85R1002A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00006-3v0-E MB85R1002A MB85R1002A I/O16 FPT-48P-M48)

    MB85RS1MT

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00022-2v0-E Memory FRAM 1M 128 K x 8 Bit SPI MB85RS1MT • DESCRIPTION MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00022-2v0-E MB85RS1MT MB85RS1MT

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00021-2v0-E FRAM MB85RC128A MB85RC128A is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00021-2v0-E MB85RC128A MB85RC128A 128K-bits

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-6v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00008-6v0-E MB85RS128A MB85RS128A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-6v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00014-6v0-E MB85RS16 MB85RS16

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00025-1v0-E FRAM MB85RS2MT MB85RS2MT is a 2M-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, it is suitable for the log management and the storage of the


    Original     		PDF NP501-00025-1v0-E MB85RS2MT MB85RS2MT DIP-8P-M03)

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-7v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00010-7v0-E MB85RC16V MB85RC16V

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–9E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF MB85RC64 MB85RC64

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00015-3v0-E Memory FRAM 64 K 8 K  8 Bit SPI MB85RS64V • DESCRIPTION MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00015-3v0-E MB85RS64V MB85RS64V

    MB85RC256VPF-G-JNERE2

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-3v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00017-3v0-E MB85RC256V MB85RC256V MB85RC256VPF-G-JNERE2

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–9E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF MB85RC128 MB85RC128

    MB85RC64PNF-G-JNERE1

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-4E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP05-13109-4E MB85RC64 MB85RC64 64K-bits MB85RC64PNF-G-JNERE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-2v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS


    Original     		PDF DS501-00003-2v0-E MB85R1001A MB85R1001A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-0v01-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		PDF DS501-00006-0v01-E MB85R4002A MB85R4002A

    MB85RS64

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-0v01-E Memory FRAM 64 K 8 K  8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00012-0v01-E MB85RS64 MB85RS64

    Fujitsu IR c code

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-4E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13107-4E MB85R2001 MB85R2001 Fujitsu IR c code

    MB85RS64V

    Abstract: MB85RS64VPNF-G-JNE1 MB85RS64VPNF-G-JNERE1
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00017-0v01-E FRAM MB85RS64V MB85RS64V is a 64K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00017-0v01-E MB85RS64V MB85RS64V 64K-bits MB85RS64VPNF-G-JNE1 MB85RS64VPNF-G-JNERE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-2v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00010-2v0-E MB85RC16V MB85RC16V

    MB85R256F

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-1v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00011-1v0-E MB85R256F MB85R256F

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-2v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00008-2v0-E MB85RS128A MB85RS128A