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MB85R1001PFTN Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MB85R1001PFTN		Fujitsu	NVRAM, Memory FRAM, 1 M Bit (128 K x 8)		Original	PDF
MB85R1001PFTN-GE1		Fujitsu	1 M Bit (128 K x 8)		Original	PDF

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F0501 Abstract: MB85R1001 MB85R1001PFTN Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-2E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	PDF	DS05-13103-2E MB85R1001 MB85R1001 F0501 F0501 MB85R1001PFTN
Untitled Abstract: No abstract text available Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13103-7E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.	Original	PDF	DS05-13103-7E MB85R1001 MB85R1001
MB85R1001 Abstract: MB85R1001PFTN-GE1 Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13103-6Ea Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.	Original	PDF	DS05-13103-6Ea MB85R1001 MB85R1001 MB85R1001PFTN-GE1
MB85R1001 Abstract: MB85R1001PFTN-GE1 FPT-48P-M25 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-5E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.	Original	PDF	DS05-13103-5E MB85R1001 MB85R1001 F0708 MB85R1001PFTN-GE1 FPT-48P-M25
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-4E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.	Original	PDF	DS05-13103-4E MB85R1001 MB85R1001 F0704
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-8E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.	Original	PDF	DS05-13103-8E MB85R1001 MB85R1001