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transistor B 540 Abstract: TRANSISTOR 1221 sot173 SOT-173 wideband transistor sot173 transistor 541 SOT173 RF transistor Text: O bjective specification P h ilip s S em icon du ctors T ^ 3 /-2 NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE / BFP520 7110fl2b 0045303 7T3 H P H IN PINNING DESCRIPTION PIN • High power gain • Low noise figure 1 collector • High transition frequency	OCR Scan	PDF	BFP520 OT173X) BFP520 OT173 OT173X 7110fl2b MBC860 OT173. transistor B 540 TRANSISTOR 1221 sot173 SOT-173 wideband transistor sot173 transistor 541 SOT173 RF transistor
SOT173 Abstract: BFP520 MBB866 mbc860 wideband transistor sot173 Text: Philips Semiconductors Hi bbS3T31 GOBIMTM ITÒ APX Objective specification NPN 9 GHz wideband transistor ^ _ FEATURES PINNING BFP520 N AnER PHILIPS/DISCRETE DESCRIPTION • High power gain PIN • Low noise figure 1 collector • High transition frequency	OCR Scan	PDF	BFP520 OT173X) BFP520 OT173 OT173X MBC860 OT173. OT173X. 900MHz. SOT173 MBB866 mbc860 wideband transistor sot173
BF547A Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS	OCR Scan	PDF	LCD01 BF547A transistor bf 175 BFG65 equivalent BF547B BFG25AXD
SOT173 Abstract: BFP520 BFP520 application notes sot-173 NPN planar RF transistor SOT173 RF transistor Text: Objective specification Philips Semiconductors T^ 3/-Z / NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D BFP520 7110fl2b 0045303 7T3 H P H IN PINNING DESCRIPTION PIN • High power gain • Low noise figure 1 collector • High transition frequency	OCR Scan	PDF	BFP520 OT173X) BFP520 OT173 OT173X 711002b MBCB60 OT173. OT173X. MBB867 SOT173 BFP520 application notes sot-173 NPN planar RF transistor SOT173 RF transistor