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ASSMANN WSW components GmbH A-USB30AM-30MBM-200 CABLE A PLUG TO MCR B PLUG 6.56'
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A-USB30AM-30MBM-200	Bag	64		1	1 $10.18 10 $8.298 100 $6.7651 1000 $5.98124 10000 $5.98124	Buy Now
AmericaFA Inc SFDL-MB-M20 INTERLOCK SOLENOID RELEASE 4PST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SFDL-MB-M20	Bulk	2			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Red Lion Controls MBM20000 BOTTOM MOUNT BRACKET KIT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBM20000	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Hitachi Ltd MBM200GS12A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MBM200GS12A		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Autonics Corporation SFDL-MB-M20 Safety switch: bolting; SFDL; 2NC + 1NC/1NO; IP67; polyamide 66
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SFDL-MB-M20				1	1 $113.12 10 $98.98 100 $98.98 1000 $98.98 10000 $98.98	Get Quote

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MBM20 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
MBM20000	Red Lion Controls	Accessories, Sensors, Transducers, BOTTOM MOUNT BRACKET KIT	Original	PDF
MBM200A6	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF
MBM200A6	Hitachi Semiconductor	IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES	Scan	PDF
MBM200A6	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MBM200A6	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MBM200A6	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
MBM200AS6	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MBM200BS6	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MBM200BS6	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MBM200GR12A	Hitachi Semiconductor	TRANS IGBT MODULE N-CH 1200V 200A	Original	PDF
MBM200GR6	Hitachi Semiconductor	TRANS IGBT MODULE N-CH 600V 200A	Original	PDF
MBM200GS12	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MBM200GS12	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MBM200GS12	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF

MBM200GS6AW	Hitachi Semiconductor	TRANS IGBT MODULE N-CH 600V 200A	Original	PDF
MBM2011A	Motorola	1M x 1-Bit Magnetic Bubble Memory Device	Original	PDF

MBM20 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MBM200GR12 Abstract: IGBT-SP-99024 Hitachi DSA00110 Text: Spec. No. IGBT-SP-99024 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12 [Rated 200A/1200V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.	Original	IGBT-SP-99024 MBM200GR12 00A/1200V, MBM200GR12 Hitachi DSA00110	PDF
Untitled Abstract: No abstract text available Text: IGBT MODU ODULE MBM200JS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 4-φ6.5 * High speed and low saturation voltage. 3-M6 108 93 18 20 4-Fast-on Terminal #110 20 C2E1 G2 * low noise due to built-in free-wheeling 15 27 48 62 E2 diode - ultra soft fast recovery diode USFD .	Original	MBM200JS12AW	PDF
MBM200GR12A Abstract: IGBT 200A 600V 600V 200A TR 1250W Text: PDJ-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [定格 200A/1200V, 2in1 パッケージタイプ] 特長外形寸法図 • 低飽和電圧特性高速スイッチング • 低ターンオフスイッチング損失 • 高速ソフトリカバリダイオード USFD 採用	Original	PDJ-M200GR12A-0 MBM200GR12A 00A/1200V, TC125 MBM200GR12A IGBT 200A 600V 600V 200A TR 1250W	PDF
Untitled Abstract: No abstract text available Text: IGBT MODU ODULE MBM200GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 3-M5 16 2-φ5.6 16 E2 C1 4-Fast-on Terminal #110 G2 E2 17 25 35 46 * High speed and low saturation voltage. 94 80 16 * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD .	Original	MBM200GS12AW	PDF
MBM200GR12A Abstract: Hitachi DSA0047 Text: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD	Original	PDE-M200GR12A-0 MBM200GR12A 00A/1200V, Weight230g MBM200GR12A Hitachi DSA0047	PDF
MBM200GR12A Abstract: No abstract text available Text: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD	Original	PDE-M200GR12A-0 MBM200GR12A 00A/1200V, Weight230g MBM200GR12A	PDF
MBM200JS12EW Abstract: e2 diode Hitachi DSA00110 Text: IGBT MODU ODULE MBM200JS12EW Silicon N-channel IGBT OUTLINE DRAWING FEAT RES EATURES 4-φ6.5 * High speed and low saturation voltage. 108 93 20 20 4-Fast-on Terminal #110 20 Unit in mm 3-M6 C2E1 * low noise due to built-in free-wheeling G2 15 27 48 62 E2 diode - ultra soft fast recovery diode USFD .	Original	MBM200JS12EW MBM200JS12EW e2 diode Hitachi DSA00110	PDF
Untitled Abstract: No abstract text available Text: IGBT MODU ODULE MBM200GS6AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 94 FEAT EATURES RES 3-M5 16 2-φ5.6 16 E2 C1 4-Fast-on Terminal #110 G2 E2 12 17 25 35 * High speed and low saturation voltage. 80 16 * low noise due to built-in free-wheeling E1	Original	MBM200GS6AW	PDF
MBM200GR6 Abstract: Hitachi DSA0047 Text: Spec. No.IGBT-SP-99020 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR6 [Rated 200A/600V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.	Original	IGBT-SP-99020 MBM200GR6 00A/600V, MBM200GR6 Hitachi DSA0047	PDF
Untitled Abstract: No abstract text available Text: IGBT MODU ODULE MBM200JS12EW Silicon N-channel IGBT OUTLINE DRAWING FEAT EATURES RES 4-φ6.5 * High speed and low saturation voltage. 108 93 20 20 4-Fast-on Terminal #110 20 Unit in mm 3-M6 C2E1 * low noise due to built-in free-wheeling G2 15 27 48 62 E2 diode - ultra soft fast recovery diode USFD .	Original	MBM200JS12EW	PDF
MBM200JS12AW Abstract: e2 diode Hitachi DSA00110 Text: IGBT MODU ODULE MBM200JS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES 4-φ6.5 * High speed and low saturation voltage. 3-M6 108 93 18 20 4-Fast-on Terminal #110 20 C2E1 G2 * low noise due to built-in free-wheeling 15 27 48 62 E2 diode - ultra soft fast recovery diode USFD .	Original	MBM200JS12AW MBM200JS12AW e2 diode Hitachi DSA00110	PDF
MBM200GS12AW Abstract: mbm200gs12a C2E1 Hitachi DSA00110 Text: IGBT MODU ODULE MBM200GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES 3-M5 16 2-φ5.6 16 E2 C1 4-Fast-on Terminal #110 G2 E2 17 25 35 46 * High speed and low saturation voltage. 94 80 16 * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD .	Original	MBM200GS12AW MBM200GS12AW mbm200gs12a C2E1 Hitachi DSA00110	PDF
MBM200GS6AW Abstract: Hitachi DSA00110 Text: IGBT MODU ODULE MBM200GS6AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 94 FEAT RES EATURES 3-M5 16 2-φ5.6 16 E2 C1 4-Fast-on Terminal #110 G2 E2 12 17 25 35 * High speed and low saturation voltage. 80 16 * low noise due to built-in free-wheeling E1	Original	MBM200GS6AW MBM200GS6AW Hitachi DSA00110	PDF
Untitled Abstract: No abstract text available Text: IGBT MODULE Spec.No.IGBT-SP-12010 R1 MBM200H45E2-H P1 Preliminary Specification Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  Isolated heat sink terminal to base .	Original	IGBT-SP-12010 MBM200H45E2-H	PDF

C2E1 Abstract: N5108 MBM300GS12AW MBN600GS12AW MBM400GR6 mbn1200gr12a 4862G G3E3 Hitachi DSA002734 MBN1200D33A Text: Date:Mar.2002 Status List M:Mass production KS02007 A:Abolition GR - A Series Advanced GR Series Absolute Maximum Ratings Connection Single Type Characteristics Outline Status 0.4 N-7 M 1.2 0.35 N-6 M 0.7 1.1 0.3 N-5 M 2.2 0.7 1.1 0.3 M- 9 M 1,250 2.2 0.6	Original	MBN1200GR12A MBN600GR12A MBN400GR12A MBM300GR12A MBM200GR12A MBM150GR12A MBM100GR12A KS02007 MBM400GR6 MBM300GR6 C2E1 N5108 MBM300GS12AW MBN600GS12AW 4862G G3E3 Hitachi DSA002734 MBN1200D33A	PDF
MC34047 Abstract: MC34046 Text: SC42584 SC42585 MOTOROLA A d v a n c e Information GENERAL DESCRIPTION The SC42584 and SC42585 Bubble M em ory controllers are m onolithic HMOS integrated circuits which control the operation of the Motorola MBM2256 256 Kilobit and MBM2011 <1 Megabit) Magnetic Bubble Memories, respectively. They provide the inter	OCR Scan	SC42584 SC42585 SC42585 MBM2256 MBM2011 40-pin MC34047 MC34046	PDF
motorola bubble memory controller Abstract: MC34047 MC34046 MBM2256 memory bubble L100 MC34044 SC42468 SC42584 SC42585 Text: SC42584 SC42585 MOTOROLA A d v a n c e Information GENERAL DESCRIPTION The SC42584 and SC42585 Bubble M e m o ry c o n tro lle rs are m o n o lith ic HM OS in te g ra te d circ u its w h ic h c o n tro l the o pe ra tio n o f th e M o to ro la M B M 2 25 6 256 K ilo b it and MBM 2011 <1 M egabit)	OCR Scan	SC42584 SC42585 MBM2256 MBM2011 40-pin SC42584* SC42585 motorola bubble memory controller MC34047 MC34046 MBM2256 memory bubble L100 MC34044 SC42468	PDF
ac Inverter schematics 10 kw Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES	OCR Scan	GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E ac Inverter schematics 10 kw 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C	PDF
IGBT MBN 1200 Abstract: 1200a6 IGBT MBN 400 A6 MBN300A6 MBM200A6 H-17 MBM100A6 MBM150A6 MBM75A6 MBN200F12 Text: - 224 - O U h ÿ 's - J X Ï = M & - ? 'j jv . * - G BT K r t ia = X h tj T O i ^ M r - x â i i ^ l è l ^ è n r i - '- S h g i -2 E o r t i v z C O l ^ ; O E 1o G B ) £ 1. Bz g V"cES V GES A î§ I c CP (T e F (1ms) (V ) (V ) (A ) (A ) Í FM I (1ms)	OCR Scan	H-101 IGBT MBN 1200 1200a6 IGBT MBN 400 A6 MBN300A6 MBM200A6 H-17 MBM100A6 MBM150A6 MBM75A6 MBN200F12	PDF
MIL-883B Abstract: No abstract text available Text: gl MOTOROLA A d v a n c e Inform ation GENERAL DESCRIPTION 1 M X 1 BIT MAGNETIC BUBBLE MEMORY DEVICE The M B M 2011A is a 1,048,576 (2^0 b it m a gn e tic b u b b le m e m o ry device. A ll re q u ire d m a g n e tic co m p o n e n ts, in clu d in g p e r	OCR Scan	MBM2011A 16-pin l883B, IL-883B, MIL-883B, MIL-STD-883B, MIL-883B	PDF
MBM300GS12A Abstract: MBN1200C33 MBM200BS6 MBM100AS6 MBM300gs6a mbm200gs12a mbm200js12a MBM150BS6 MBB100AS6 MBM300BS6 Text: IGBTESä-Jb IGBT Modules • £ï • m m H ß is w w E & t t x ' i v r y y * • @ S £ V y h U t i l t u - * - < * - F U S F D J g « \| c <£ D , « y - r x • « » lif â Ê ( ï ü ? t : - ■Features #High speed and low saturation voltage #Low noise due to built-in free-wheeling USFD	OCR Scan	MBN400C20 MBN600C20 MBN400C33 MBN600C33 MBN1200C33 MBM300GS12A MBN1200C33 MBM200BS6 MBM100AS6 MBM300gs6a mbm200gs12a mbm200js12a MBM150BS6 MBB100AS6 MBM300BS6	PDF
MBN300A6 Abstract: 25 KW inverter 150 KW motor 12 to 220 inverter 110 KW motor .37 KW motor IGBT inverter Hitachi INVERTER 50 kW GN6030C MBM300A6 Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES	OCR Scan	GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E MBN300A6 25 KW inverter 150 KW motor 12 to 220 inverter 110 KW motor .37 KW motor IGBT inverter Hitachi INVERTER 50 kW MBM300A6	PDF
2sk1058 equivalent Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297 Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,	OCR Scan	O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297	PDF
MBB100A6 Abstract: MBB50A6 MBB75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6 MBN200A6 Text: HITACHI 22 2.6 IGBT Module Range with Soft and Fast SFD Free-Wheeling Diodes • High speed . small recovery time, tr • Low loss . small reverse-peak current, Irp • Low noise . small rate of charge of recovery current, di/dt In order to maintain switching losses to minimal,	OCR Scan	MBM75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBB50A6 MBB75A6 MBB100A6 MBN200F12 MBN300F12 MBB100A6 MBB50A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6 MBN200A6	PDF

MBM20 Search Results

MBM20 Price and Stock

ASSMANN WSW components GmbH A-USB30AM-30MBM-200

AmericaFA Inc SFDL-MB-M20

Red Lion Controls MBM20000

Hitachi Ltd MBM200GS12A

Autonics Corporation SFDL-MB-M20

MBM20 Datasheets (16)

MBM20 Datasheets Context Search

MBM200GR12

Untitled

MBM200GR12A

Untitled

MBM200GR12A

MBM200GR12A

MBM200JS12EW

Untitled

MBM200GR6

Untitled

MBM200JS12AW

MBM200GS12AW

MBM200GS6AW

Untitled

C2E1

MC34047

motorola bubble memory controller

ac Inverter schematics 10 kw

IGBT MBN 1200

MIL-883B

MBM300GS12A

MBN300A6

2sk1058 equivalent

MBB100A6