MBR10120CT
Abstract: No abstract text available
Text: MOSPEC MBR10120CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in
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MBR10120CT
MBR10120CT
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mbr10120
Abstract: MBR10100CL
Text: MOSPEC MBR10120CL Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in
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MBR10120CL
mbr10120
MBR10100CL
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Untitled
Abstract: No abstract text available
Text: MOSPEC MBR10120CL Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in
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MBR10120CL
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MBR10120 Preliminary DIODE 10A SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR10120 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and
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MBR10120
MBR10120
MBR10120L-TA3-T
MBR10120G-TA3-T
MBR10120L-TFat
QW-R202-021
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Untitled
Abstract: No abstract text available
Text: SUZHOU GOOD-ARK ELECTRONIC CO., LTD 苏州固锝电子股份有限公司 Product Specification GOODARK Type MBR10120CT Construction : : Schottky Barrier Rectifier Application : For General Purpose (Manufacturer): Suzhou Goodark Electronics Co.,Ltd Prepared on Sep. 17th, 2008
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MBR10120CT
300us
50units
1000units)
000units)
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Untitled
Abstract: No abstract text available
Text: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175 MBR10120CL
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MBR10120CL
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mbr10120
Abstract: No abstract text available
Text: MOSPEC MBR10120C Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in
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MBR10120C
mbr10120
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Untitled
Abstract: No abstract text available
Text: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175 MBR10120CT
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MBR10120CT
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MBR10120CT
Abstract: mbr10120
Text: MOSPEC MBR10120CT Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in
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MBR10120CT
MBR10120CT
mbr10120
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MBR10120CK
Abstract: No abstract text available
Text: MOSPEC MBR10120CK Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in
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MBR10120CK
MBR10120CK
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Untitled
Abstract: No abstract text available
Text: MOSPEC MBR10120CK Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175 junction temperature. Typical application are in
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MBR10120CK
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mbr10120
Abstract: No abstract text available
Text: MBR20120CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 120 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge¤t capability, low VF
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MBR20120CE
O-262AA
MIL-STD-202
mbr10120
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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MBR2012
Abstract: mbr10120
Text: MBR20120CE SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 120 Volts – 20 Amperes I2PAK • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High surge¤t capability, low VF
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MBR20120CE
O-262AA
MIL-STD-202
MBR2012
mbr10120
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