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    MBR35 Price and Stock

    GeneSic Semiconductor Inc MBR3560R

    DIODE SCHOTTKY REV 60V 35A DO4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBR3560R Bulk 30 1
    • 1 $18.57
    • 10 $15.828
    • 100 $13.489
    • 1000 $12.65704
    • 10000 $12.65704
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    NAC MBR3560R 250
    • 1 -
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    • 1000 $14.89
    • 10000 $14.89
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    GeneSic Semiconductor Inc MBR3545

    DIODE SCHOTTKY 45V 35A DO4
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    DigiKey MBR3545 Bulk 1 1
    • 1 $17.66
    • 10 $17.66
    • 100 $17.66
    • 1000 $17.66
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    Newark MBR3545 Bulk 500
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    • 10000 $12.99
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    NAC MBR3545 250
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    • 10000 $14.05
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    GeneSic Semiconductor Inc MBR3535

    DIODE SCHOTTKY 35V 35A DO4
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    DigiKey MBR3535 Bulk 500
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    • 1000 $11.94802
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    Newark MBR3535 Bulk 500
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    NAC MBR3535 250
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    GeneSic Semiconductor Inc MBR3580

    DIODE SCHOTTKY 80V 35A DO4
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    DigiKey MBR3580 Bulk 500
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    NAC MBR3580 250
    • 1 -
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    • 1000 $14.05
    • 10000 $14.05
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    GeneSic Semiconductor Inc MBR3560

    DIODE SCHOTTKY 60V 35A DO4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBR3560 Bulk 500
    • 1 -
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    • 1000 $11.94802
    • 10000 $11.94802
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    NAC MBR3560 250
    • 1 -
    • 10 -
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    • 1000 $14.05
    • 10000 $14.05
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    Find more MBR35 price and stock on Findchips.com

    MBR35 Datasheets (96)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR350 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    MBR350 International Rectifier Schottky Rectifier Original PDF
    MBR350 Unknown SCHOTTKY RECTIFIER 3.0 Amp Original PDF
    MBR350 On Semiconductor Axial Lead Rectifiers Original PDF
    MBR350 Microsemi Schottky Rectifier Scan PDF
    MBR350 Motorola Switchmode Datasheet Scan PDF
    MBR350 Motorola European Master Selection Guide 1986 Scan PDF
    MBR350 Motorola Axial Lead Rectifiers Scan PDF
    MBR350 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MBR3505 DC Components TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER Original PDF
    MBR3505W DC Components TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER Original PDF
    MBR350/D On Semiconductor SCHOTTKY BARRIER RECTIFIER Original PDF
    MBR350-D On Semiconductor Axial Lead Rectifiers Original PDF
    MBR350P Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MBR350RL On Semiconductor SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES Original PDF
    MBR350RL On Semiconductor 3A 50V Schottky Rectifier Original PDF
    MBR350RLG On Semiconductor 3A 50V Schottky Rectifier Original PDF
    MBR350TR International Rectifier 50V 3A Schottky Discrete Diode in a DO-201AD package Original PDF
    MBR351 DC Components TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER Original PDF
    MBR35100 America Semiconductor HIGH POWER-SCHOTTKY RECTIFIER; IF::35A; case_package:DO4 Stud Devices Original PDF

    MBR35 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy


    Original     		VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 2002/95/EC DO-201AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR350 -M3 , VS-MBR360 (-M3) www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy


    Original     		VS-MBR350 VS-MBR360 DO-201AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    MBR360

    Abstract: B350 B360 MBR350 MBR350RL MBR360RL
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap


    Original     		MBR350, MBR360 MBR360 r14525 MBR350/D B350 B360 MBR350 MBR350RL MBR360RL PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR3520 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current35 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.600 V(FM) Max.(V) Forward Voltage690m @I(FM) (A) (Test Condition)70


    Original     		MBR3520 Current35 Voltage20 Voltage690m Current100m StyleDO-203AA PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR3545 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current35 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.600 V(FM) Max.(V) Forward Voltage690m @I(FM) (A) (Test Condition)70


    Original     		MBR3545 Current35 Voltage45 Voltage690m Current100m StyleDO-203AA PDF

    MOTOROLA B360

    Abstract: MBR340 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350
    Text: MOTOROLA Order this document by MBR320/D SEMICONDUCTOR TECHNICAL DATA MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original     		MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 MBR340 MBR360 MOTOROLA B360 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350 PDF

    Untitled

    Abstract: No abstract text available
    Text: Una, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 MBR3520 MBR3535 MBR3545 SCHOTTKY BARRIER RECTIFIERS 3E AMPERES 20 to 45 VOLTS MAXIMUM RATINGS Rating P«ak Repetitive Reverse Voltage Working Peak Reverse Voltage


    Original     		MBR3520 MBR3535 MBR3545 110-C) MBR3B20 PDF

    MBR360

    Abstract: Marking B360 B350 B360 MBR350 MBR350RL MBR360RL
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap


    Original     		MBR350, MBR360 MBR360 MBR350/D Marking B360 B350 B360 MBR350 MBR350RL MBR360RL PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR3520 thru MBR3540R Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 35 A Features • High Surge Capability • Types up to 100 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.


    Original     		MBR3520 MBR3540R MBR3520 MBR3530 MBR3535 MBR3540 MBR3530 PDF

    MOTOROLA SEMICONDUCTOR B360

    Abstract: MOTOROLA B360 MBR360 B350 B360 MBR350 voltage RECTIFIER Motorola voltage rectifier diode motorola
    Text: MOTOROLA Order this document by MBR350/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers MBR350 MBR360 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original     		MBR350/D MBR350 MBR360 MBR360 DeviceMBR350/D MOTOROLA SEMICONDUCTOR B360 MOTOROLA B360 B350 B360 MBR350 voltage RECTIFIER Motorola voltage rectifier diode motorola PDF

    MBR360

    Abstract: 20594 MBR350 MR360
    Text: Bulletin PD-20594 04/01 MBR350 MBR360 3.0 Amp SCHOTTKY RECTIFIER Description/Features Major Ratings and Characteristics Characteristics MBR350 MBR360 Units IF AV Rectangular 3.0 A 50/60 V waveform VRRM The MBR350, MBR360 axial leaded Schottky rectifier has


    Original     		PD-20594 MBR350 MBR360 MBR350, MBR360 MR360 20594 MBR350 MR360 PDF

    MBR360

    Abstract: No abstract text available
    Text: MBR350/MBR360 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline Cathode Anode • Very low forward voltage drop RoHS • High frequency operation COMPLIANT • High purity, high temperature epoxy encapsulation for


    Original     		MBR350/MBR360 MBR350, MBR360 18-Jul-08 PDF

    MBR3545H1

    Abstract: No abstract text available
    Text: MBR3545H1 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current35 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.600 V(FM) Max.(V) Forward Voltage690m @I(FM) (A) (Test Condition)70


    Original     		MBR3545H1 Current35 Voltage45 Voltage690m Current100m PDF

    MBR360

    Abstract: No abstract text available
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap


    Original     		MBR350, MBR360 MBR360 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR350, MBR360 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original     		MBR350, MBR360 MBR360 11-Mar-11 PDF

    MBR350

    Abstract: MBR360 MR360 20594
    Text: Bulletin PD-20594 rev. A 03/02 MBR350 MBR360 SCHOTTKY RECTIFIER 3.0 Amp Description/Features Major Ratings and Characteristics Characteristics MBR350 MBR360 Units IF AV Rectangular 3.0 A 50/60 V waveform VRRM IFSM @ tp = 5 µs sine 460 A VF @ 3 Apk, TJ = 25°C


    Original     		PD-20594 MBR350 MBR360 MBR350, MBR360 MR360 MBR350 MR360 20594 PDF

    3504W

    Abstract: MBR3505 MBR351 MBR352 MBR354
    Text: MBR3505 THRU MBR3510 DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation


    Original     		MBR3505 MBR3510 MBR-25 MIL-STD-202E, KBPC35005W MB3505W KBPC3510W MB3510W 3504W MBR3505 MBR351 MBR352 MBR354 PDF

    MBR360

    Abstract: MBR350
    Text: MBR350 ~ MBR360 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 50 - 60 Volts IO : 3.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Pb / RoHS Free


    Original     		MBR350 MBR360 DO-201AD DO-201AD UL94V-O MIL-STD-202, MBR360 MBR350 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with


    OCR Scan     		MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 MBR340 MBR360 b3b72Â MBR320 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBR350/D SEMICONDUCTOR TECHNICAL DATA A x ia l L e a d R e c tifie r s MBR350 MBR360 . . employing the Schottky Barrier principle in a large area m e tal-to-silicon power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with


    OCR Scan     		MBR350/D PDF

    MBR360

    Abstract: MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340
    Text: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices A xial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan     		MBR320, MBR330, MBR340, MBR350, MBR360 MBR360 MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340 PDF

    MBR360

    Abstract: motorola b330
    Text: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M BR340 and MBR360 are M otorola Preferred Devices A xial Lead R e ctifie rs . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan     		MBR320 MBR340 MBR330 MBR350 MBR360 BR340 MBR360 motorola b330 PDF

    MBR3545

    Abstract: MBR-3535
    Text: MBR3520 MBR3535 MBR3545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3545 is a M oto ro la P referred D evice Sw itchm ode Power R ectifiers SCHOTTKY BARRIER RECTIFIERS . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art


    OCR Scan     		MBR3520 MBR3535 MBR3545 MBR3545 MBR-3535 PDF

    MBR360

    Abstract: Diode MBR350
    Text: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan     		MBR320 MBR340 MBR330 MBR350 MBR360 MBR360 MBR320, MBR330, MBR340, Diode MBR350 PDF