Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MBR600100CTR Search Results

    SF Impression Pixel

    MBR600100CTR Price and Stock

    GeneSic Semiconductor Inc MBR600100CTR

    DIODE MOD SCHOT 100V 300A 2TOWER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBR600100CTR Bulk 80
    • 1 -
    • 10 -
    • 100 $107.86775
    • 1000 $107.86775
    • 10000 $107.86775
    Buy Now
    Mouser Electronics MBR600100CTR
    • 1 -
    • 10 -
    • 100 $107.86
    • 1000 $107.86
    • 10000 $107.86
    Get Quote
    NAC MBR600100CTR 25
    • 1 -
    • 10 -
    • 100 $126.83
    • 1000 $126.83
    • 10000 $126.83
    Buy Now

    Navitas Semiconductor MBR600100CTR

    Silicon Rectifier Module - Schottky (Rev Config) - 100V - 600A - Twin Tower
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MBR600100CTR
    • 1 -
    • 10 -
    • 100 $110.43
    • 1000 $110.43
    • 10000 $110.43
    Buy Now

    MBR600100CTR Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR600100CTR GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 100V 600A 2TOWER Original PDF

    MBR600100CTR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR60045CT thru MBR600100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 600 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original
    MBR60045CT MBR600100CTR MBR60060CT MBR60080CT MBR600100CT PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR60045CT thru MBR600100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 600 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original
    MBR60045CT MBR600100CTR MBR60045CT MBR60060CT MBR60080CT MBR600100CT PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR60045CT thru MBR600100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 600 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original
    MBR60045CT MBR600100CTR MBR60045CT MBR60060CT MBR60080CT MBR600100CT PDF

    MBR60045CT

    Abstract: No abstract text available
    Text: Naina Semiconductor Ltd. MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified


    Original
    MBR60045CT MBR600100CTR MBR60045CT MBR60060CT MBR60080CT MBR600100C PDF