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    MC 108 TRANSISTOR Search Results

    MC 108 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    MC 108 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    YTF540

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS h HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10 .3 MA X. • FEATURES: •Low Drain-Source ON Resistance : ROS(ON)= 0.07ß (Typ.)


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    10/oe VGS-10V, 00A//ts YTF540 PDF

    0f10v

    Abstract: No abstract text available
    Text: TELEDYNE COMPONENTS m äT17büa Q0üb577 3 EÒE D F O T O F ET SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR FF 108 G E O M E T R Y 282 • • • • • HIGH SENSITIVITY LOW D A R K CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT FLAT GLASS TOP FOR EXTERNAL OPTICS


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    400mW 0f10v PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1928 Field Effect Transistor Silicon N Channel MOSType itMOS II High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' ^DS(ON) = 0.7Q (Typ.) • High Forward Transfer Admittance - lYfSl= 10S (Typ.)


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    2SK1928 0021fc PDF

    2SK1928

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance


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    2SK1928 ij100A/MS 2SK1928 PDF

    ERF150WJ

    Abstract: 72606-WV003 72606-WV001 PS-UDC24 VZA42P2HAA VZA40P7BAA JVOP-181 VZA40P7HAA VZA47P5HAA VZA40P4HAA
    Text: I68E-EN-01+V1000+Datasheet.fm Seite 1 Mittwoch, 18. Juli 2007 2:16 14 VZ V1000 More performance & Quality in less space • • • • • • • • • • • • • Current vector control High starting torque 200% / 0.5 Hz 1:100 speed control range


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    I68E-EN-01 V1000 V1000 EN954-1 VZ-21P5/22P2 VZ-41P5/42P2/43P0 VZ-24P0 VZ-44P0 VZ-40P2/40P4 VZ-25P5/27P5 ERF150WJ 72606-WV003 72606-WV001 PS-UDC24 VZA42P2HAA VZA40P7BAA JVOP-181 VZA40P7HAA VZA47P5HAA VZA40P4HAA PDF

    KF520

    Abstract: KF521 KF552 KS4391 KF522 field effect transistors KS4392 KS4393 S10ms transistor 4393
    Text: MOS FIELD EFFECT TRANSISTORS MOS-F ELDE F F ECT-TR AN SISTOR EN Channel Kanal KF520 Maximum ratings UGE N KF521 N Grenzdaten Ucc lc Ptot h V V mA mW Rc e on * RC E (O F F ) * °C Q mS ±701) — 30 300 175 & 1013 ê 0,3 Uc£ U CEM* UCEM * V 30 20 2) * •


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    KF520 KF521 KF522 KF523 KF522, KF523: KS4391 T11/1 KS4392 KF552 KS4391 field effect transistors KS4392 KS4393 S10ms transistor 4393 PDF

    INVERTER 50 kW

    Abstract: 5,5 KW 3-phase motor weight 150 KW motor a1000-cavpc232-ee 110 KW motor 90 KW motor jvop 160 37 KW motor ERF-150WJ401 IT 236 schaffner
    Text: VZ V1000 More performance & Quality in less space • • • • • • • • • • • • • Current vector control High starting torque 200% / 0.5 Hz 1:100 speed control range Double rating ND 120%/1min and HD 150%/1 min IM&PM motor control Online Tuning


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    V1000 EN954-1 EN6158 EN60204-1 EZZ08122C 21P5/22P2 41P5/42P2/43P0 40P2/40P4 25P5/27P5 45P5/47P5 INVERTER 50 kW 5,5 KW 3-phase motor weight 150 KW motor a1000-cavpc232-ee 110 KW motor 90 KW motor jvop 160 37 KW motor ERF-150WJ401 IT 236 schaffner PDF

    VZA40P7BAA

    Abstract: a1000-cavpc232-ee ERF-150WJ201 ERF-150WJ101 ERF-150WJ301 ERF-150WJ401 VZA42P2BAA VZA41P5BAA INVERTER 50 kW A1000-FIV1010-SE
    Text: VZ V1000 More performance & Quality in less space • • • • • • • • • • • • • Current vector control High starting torque 200% / 0.5 Hz 1:100 speed control range Double rating ND 120%/1min and HD 150%/1 min IM&PM motor control Online Tuning


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    V1000 EN954-1 EN6158 EN60204-1 EZZ08122C 21P5/22P2 41P5/42P2/43P0 40P2/40P4 25P5/27P5 45P5/47P5 VZA40P7BAA a1000-cavpc232-ee ERF-150WJ201 ERF-150WJ101 ERF-150WJ301 ERF-150WJ401 VZA42P2BAA VZA41P5BAA INVERTER 50 kW A1000-FIV1010-SE PDF

    ERF-150WJ401

    Abstract: ERF-150WJ201 VZA40P7BAA ERF-150WJ301 ERF-150WJ751 A1000-FIV3010-SE A1000-FEV2102-RE A1000-FIV3010-RE a1000-cavpc232-ee A1000-REV00K4100-IE
    Text: VZ V1000 More performance & Quality in less space • • • • • • • • • • • • • Current vector control High starting torque 200% / 0.5 Hz 1:100 speed control range Double rating ND 120%/1min and HD 150%/1 min IM&PM motor control Online Tuning


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    V1000 EN954-1 EN6158 EN60204-1 EZZ08122A 20P1/20P2/20P4/20P7 EZZ08122B 21P5/22P2 40P2/40P4/40P7/41P5/42P2 EZZ08122D ERF-150WJ401 ERF-150WJ201 VZA40P7BAA ERF-150WJ301 ERF-150WJ751 A1000-FIV3010-SE A1000-FEV2102-RE A1000-FIV3010-RE a1000-cavpc232-ee A1000-REV00K4100-IE PDF

    BUZ11A

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON TYPE BUZ11A IH iO lM iQ O I B U Z 11 A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss R DS on Id 50 V < 0.055 a 27 A • TYPICAL R Ds(on) = 0.048 Q AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


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    BUZ11A BUZ11A PDF

    4312 020 36642

    Abstract: BLV37 transistor tt 2222 9t2 transistor ca212 TT 2222 npn transistor 4312
    Text: PHILIPS INTERNATIONAL bSE ]> • 711002b OObS'in 3dfl « P H I N BLV37 A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in V H F broadcast transmitters. Features • Internally matched input fo r wideband operation and high power gain


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    711002b BLV37 OT179 711Da2b 4312 020 36642 BLV37 transistor tt 2222 9t2 transistor ca212 TT 2222 npn transistor 4312 PDF

    L428

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2789 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O SV 2SK2789 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm T0-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


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    2SK2789 T0-220FL 100/iA 20kil) 428//H L428 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2314 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L2- tt-M O S V 2SK2314 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 03.6 ±0.2


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    2SK2314 20kil) IAR-27A, 428//H PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2314 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O SV 2SK2314 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Sorce ON Resistance : Rjjg (ON)=


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    2SK2314 20kf2) PDF

    6 pin TRANSISTOR SMD CODE PA

    Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
    Text: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol


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    BUZ22SMD q67042-s4139 DsJ14 6 pin TRANSISTOR SMD CODE PA BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD PDF

    16V 100uf

    Abstract: PCM1773 PCM1770 PCM1772 FP1F
    Text: DEMĆDAI1772/1773 EVM User’s Guide September 2002 DAV Digital Audio/Speaker SLEU025 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


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    DEMDAI1772/1773 SLEU025 PCM1772/73 10uF/16V 10uF/ JP001 CN002 CN001 16V 100uf PCM1773 PCM1770 PCM1772 FP1F PDF

    equivalent components of transistor 772

    Abstract: hartley oscillator mc13146
    Text: MC13146 Low Power Integrated Transmitter for ISM Band Applications LOW POWER DC – 1.8 GHz TRANSMITTER The MC13146 is an integrated RF transmitter targeted at ISM band applications. It features a 50 Ω linear Mixer with linearity control, voltage controlled oscillator, divide by 64/65 dual modulus Prescaler and Low Power


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    MC13146 MC13145) MC33410 MC33411A/B) MC13146 equivalent components of transistor 772 hartley oscillator mc13146 PDF

    MCP60421

    Abstract: mcp61421 PIC16F877 stepper motor interfacing PIC16F874A SD card Thermistor 20SP switch reluctance motor control using pic18F46K20 ENC28J60 mplab icd 3 mclr pgd pgc pic16f722 TC1426 rf transmitter and receiver for pic16f887
    Text: July - September 2006 2006 Product Selector Guide Product Profile 8-bit PIC Microcontrollers Microchip’s PIC® family of microcontrollers combine high-performance, low cost and small package size to offer the best price/ performance ratio in the industry. Based on a powerful RISC core, these 8-bit PIC®microcontrollers fall into three product architecture


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    12-bit 14-bit PIC18) 16-bit DS00148L2 DS00148L2* MCP60421 mcp61421 PIC16F877 stepper motor interfacing PIC16F874A SD card Thermistor 20SP switch reluctance motor control using pic18F46K20 ENC28J60 mplab icd 3 mclr pgd pgc pic16f722 TC1426 rf transmitter and receiver for pic16f887 PDF

    C732B

    Abstract: 337 BGA 337 BGA footprint EPM7032AE EPM7064AE EPM7128A EPM7128AE EPM7256A EPM7256AE EPM7512AE
    Text: MAX 7000A Includes MAX 7000AE Programmable Logic Device Family August 2000, ver. 3.1 Data Sheet • Features. ■ ■ ■ ■ ■ ■ ■ f High-performance 3.3-V EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX


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    7000AE JESD-71 EPM7128A EPM7256A 49-pin 169-pin C732B 337 BGA 337 BGA footprint EPM7032AE EPM7064AE EPM7128AE EPM7256AE EPM7512AE PDF

    NEC MYS

    Abstract: FR-S540E S-N10 Magnetic Contactor FR-S520se magnetic S-N20 mitsubishi s-n10 FR-S520E-0 fr-s540e-3.7k user manual service manual FR-S520SE S-N10 Contactor
    Text: INVERTER FR-S500 FR-S500E TRANSISTORIZED INVERTER INSTRUCTION MANUAL BASIC HEAD OFFICE:MITSUBISHI DENKI BLDG MARUNOUCHI TOKYO 100-8310 B IB(NA)-0600151E-B (0408) MEE Printed in Japan Specifications subject to change without notice. INSTRUCTION MANUAL (BASIC)


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    FR-S500 FR-S500E FR-S520E-0 FR-S540E-0 FR-S520SE-0 FR-S510WE-0 FR-S500 -0600152E] NEC MYS FR-S540E S-N10 Magnetic Contactor FR-S520se magnetic S-N20 mitsubishi s-n10 fr-s540e-3.7k user manual service manual FR-S520SE S-N10 Contactor PDF

    4093 BP

    Abstract: cd 4093 equivalent V40098D V40511D 40511 4017 BP MC 4011 BCP MC 4093 ZUD 132 ci 4093 equivalent
    Text: i iriilk if^ B c lG l-c te n a n il-i Übersicht CMOS-Schaltkreise CMOS-IC’s Übersicht CMOS-Schaltkreise - CMOS-IC’s V4001 D V 4007 D V4011 D V 4012 D V 4013 D V4015D V4017D V4019D V 4023 D V 4027 D V 4028 D V 4029 D V 4030 D V 4034 D V 4035 D V 4042


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    V4001 V4011 V4015D V4017D V4019D V4051 4093 BP cd 4093 equivalent V40098D V40511D 40511 4017 BP MC 4011 BCP MC 4093 ZUD 132 ci 4093 equivalent PDF

    mps1983

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR MPS901 MPS1983 TECHNICAL DATA T h e R F L in e 1C = 3 0 m A HIGH FREQUENCY TRANSISTORS N P N S IL IC O N H IG H - F R E Q U E N C Y T R A N S IS T O R NPN SILICION . . . designed prim arily for use in high-gain, low-noise small-signal


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    MPS901 MPS1983 MRF901 mps1983 PDF

    MATRA

    Abstract: t4211 MCT12K MC10K
    Text: 4TE — MATRA D H H S Preliminary • SflböMSb GÜ0E3Ü4 43T ■ H M H S =T 7= iiiiK iiii l i T H January 1991 ASIC HI-REL DATA SHEET MC GATE ARRAY SERIES 0.8 MICRON SCMOS FEATURES SUPER CMOS TECHNOLOGY -1 nm DRAWN 2 METAL LAYERS FLEXIBLE I/O CONFIGURATION : INPUT,


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Switching 450V, 7A 2SK2299N •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1) Low on-resistance. _a, •mn + 0.3 10.0 2) High-speed switching. - . c+ 0.3 0.1 4 5 3) W ide SOA (safe operating area). 4) G ate-source volta ge guaranteed


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    2SK2299N O-220FN PDF