Untitled
Abstract: No abstract text available
Text: Aluminum Electrolytic Capacitors/MC Surface Mount Type Aluminum Electrolytic Capacitors Japan MC V Series: Type: Surface mount type Low profile • Features 85 ¡C 1000Hr Low profile MC ● Lifetime: 85 ûC 1000 h ↑ ■ Recommended Applications 85 ¡C 1000Hr
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Original
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1000Hr
1000Hr
EE030
1000h
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB647 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CB647EFA, MC-458CB647PFA and MC-458CB647XFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.
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Original
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MC-458CB647
64-BIT
MC-458CB647EFA,
MC-458CB647PFA
MC-458CB647XFA
PD45128163
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PDF
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4532
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CD646 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CD646EF, MC-4532CD646PF and MC-4532CD646XF are 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
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MC-4532CD646
32M-WORD
64-BIT
MC-4532CD646EF,
MC-4532CD646PF
MC-4532CD646XF
PD45128841
MC-4532CD646EF-A80
4532
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB647 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CB647EF, MC-4516CB647PF and MC-4516CB647XF are 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
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MC-4516CB647
16M-WORD
64-BIT
MC-4516CB647EF,
MC-4516CB647PF
MC-4516CB647XF
PD45128841
MC-4516CB647EF-A75
MC-4516CB647PF-A75
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA727EF, MC-4516CA727PF and MC-4516CA727XF are 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
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MC-4516CA727
16M-WORD
72-BIT
MC-4516CA727EF,
MC-4516CA727PF
MC-4516CA727XF
PD45128841
MC-4516CA727EF-A75
MC-4516Csubmersible
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CD647 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CD647EF, MC-4532CD647PF and MC-4532CD647XF are 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
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MC-4532CD647
32M-WORD
64-BIT
MC-4532CD647EF,
MC-4532CD647PF
MC-4532CD647XF
PD45128841
MC-4532CD647EF-A75
MC-4532CD647PF-A7submersible
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CC727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CC727EF, MC-4532CC727PF and MC-4532CC727XF are 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
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MC-4532CC727
32M-WORD
72-BIT
MC-4532CC727EF,
MC-4532CC727PF
MC-4532CC727XF
PD45128841
MC-4532CC727EF-A75
MC-453submersible
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PDF
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mc 082
Abstract: capacitor 0.15 k 100
Text: Aluminium Electrolytic Capacitors/MC Aluminium Electrolytic Capacitors Type Snap-in Series MC Series: Type: Japan MC TS (Snap-in) Over voltage guaranteed • Features ● Lifetime: 105 ûC 2000 h ● Improved safety for DC overvoltages up to 1.5 times rated working voltage.
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Original
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ECEC2WC331EB
ECES2WC221DB
ECEC2WC221DB
2000h
EE185
mc 082
capacitor 0.15 k 100
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CB646EF, MC-4516CB646PF and MC-4516CB646XF are 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
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MC-4516CB646
16M-WORD
64-BIT
MC-4516CB646EF,
MC-4516CB646PF
MC-4516CB646XF
PD45128841
MC-4516CB646EF-A80
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CA726 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA726EF, MC-4516CA726PF and MC-4516CA726XF are 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
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MC-4516CA726
16M-WORD
72-BIT
MC-4516CA726EF,
MC-4516CA726PF
MC-4516CA726XF
PD45128841
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA727EF, MC-4516CA727PF and MC-4516CA727XF are 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
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MC-4516CA727
16M-WORD
72-BIT
MC-4516CA727EF,
MC-4516CA727PF
MC-4516CA727XF
PD45128841
MC-4516CA727EF-A75
MC-4516Csubmersible
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CD647 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-4532CD647EF, MC-4532CD647PF and MC-4532CD647XF are 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
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MC-4532CD647
32M-WORD
64-BIT
MC-4532CD647EF,
MC-4532CD647PF
MC-4532CD647XF
PD45128841
MC-4532CD647EF-A75
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB646 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CB646EFB, MC-458CB646PFB and MC-458CB646XFB are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.
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Original
|
MC-458CB646
64-BIT
MC-458CB646EFB,
MC-458CB646PFB
MC-458CB646XFB
PD45128163
|
PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CC726 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CC726EF, MC-4532CC726PF and MC-4532CC726XF are 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
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MC-4532CC726
32M-WORD
72-BIT
MC-4532CC726EF,
MC-4532CC726PF
MC-4532CC726XF
PD45128841
MC-4532CC726EF-A80
MC-4532submersible
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PDF
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300a 1000v thyristor
Abstract: mc5001 D-68623 1800 IXYS mc 1732 IXYS M2000-200 thyristor
Text: IXYS Dual Thyristor Module Types MC#500-12io1 to MC#500-18io1 IXYS Date:- 5 Jan, 2004 Data Sheet Issue:- 1 Dual Thyristor Module Types MC#500-12io1 to MC#500-18io1 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1
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Original
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500-12io1
500-18io1
500-18io1
300a 1000v thyristor
mc5001
D-68623
1800 IXYS
mc 1732
IXYS M2000-200 thyristor
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PDF
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MC-4532CC726
Abstract: MC-4532CC726EF-A10 MC-4532CC726EF-A80 MC-4532CC726PF-A10 MC-4532CC726PF-A80
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CC726 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-4532CC726EF, MC-4532CC726PF and MC-4532CC726XF are 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
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MC-4532CC726
32M-WORD
72-BIT
MC-4532CC726EF,
MC-4532CC726PF
MC-4532CC726XF
PD45128841
MC-4532CC726EF-A80
MC-4532CC726
MC-4532CC726EF-A10
MC-4532CC726EF-A80
MC-4532CC726PF-A10
MC-4532CC726PF-A80
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB647 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description EO The MC-458CB647EFA, MC-458CB647PFA and MC-458CB647XFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.
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Original
|
MC-458CB647
64-BIT
MC-458CB647EFA,
MC-458CB647PFA
MC-458CB647XFA
PD45128163
MC-458CB647EFA-A75
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PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB647 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-4516CB647EF, MC-4516CB647PF and MC-4516CB647XF are 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
|
MC-4516CB647
16M-WORD
64-BIT
MC-4516CB647EF,
MC-4516CB647PF
MC-4516CB647XF
PD45128841
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description EO The MC-4516CB646EF, MC-4516CB646PF and MC-4516CB646XF are 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
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MC-4516CB646
16M-WORD
64-BIT
MC-4516CB646EF,
MC-4516CB646PF
MC-4516CB646XF
PD45128841
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB647 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CB647EFA, MC-458CB647PFA and MC-458CB647XFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.
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Original
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MC-458CB647
64-BIT
MC-458CB647EFA,
MC-458CB647PFA
MC-458CB647XFA
PD45128163
MC-458CB647EFA-A75
MC-458CB647PFA-A75,
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PDF
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MC-4532CD646
Abstract: MC-4532CD646EF-A10 MC-4532CD646EF-A80 MC-4532CD646PF-A10 MC-4532CD646PF-A80 MC-4532CD646XF-A10 MC-4532CD646XF-A80
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CD646 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-4532CD646EF, MC-4532CD646PF and MC-4532CD646XF are 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.
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Original
|
MC-4532CD646
32M-WORD
64-BIT
MC-4532CD646EF,
MC-4532CD646PF
MC-4532CD646XF
PD45128841
MC-4532CD646
MC-4532CD646EF-A10
MC-4532CD646EF-A80
MC-4532CD646PF-A10
MC-4532CD646PF-A80
MC-4532CD646XF-A10
MC-4532CD646XF-A80
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PDF
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MC-458CB647XFA-A75
Abstract: MC-458CB647 MC-458CB647EFA-A75 MC-458CB647PFA-A75 PD45128163
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB647 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description EO The MC-458CB647EFA, MC-458CB647PFA and MC-458CB647XFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.
|
Original
|
MC-458CB647
64-BIT
MC-458CB647EFA,
MC-458CB647PFA
MC-458CB647XFA
PD45128163
MC-458CB647EFA-A75
MC-458CB647XFA-A75
MC-458CB647
MC-458CB647EFA-A75
MC-458CB647PFA-A75
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PDF
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MC-4532CD647
Abstract: MC-4532CD647EF-A75 MC-4532CD647PF-A75 PD45128841 45128
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CD647 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-4532CD647EF, MC-4532CD647PF and MC-4532CD647XF are 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.
|
Original
|
MC-4532CD647
32M-WORD
64-BIT
MC-4532CD647EF,
MC-4532CD647PF
MC-4532CD647XF
PD45128841
MC-4532CD647
MC-4532CD647EF-A75
MC-4532CD647PF-A75
45128
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PDF
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panasonic snap-in capacitor
Abstract: E CAP 250v 105 K capacitor PANASONIC CASE CODE
Text: Panasonic Series: Type: Aluminium Electrolytic Capacitors/MC MC TS Snap-in Aluminium Electrolytic Capacitors (Type Snap-in Series MC) Japan Over voltage guaranteed • Features • Lifetime: 105 "C 2000 h • Im proved sa fety for DC overvoltages up to 1.5
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OCR Scan
|
22x40
25x30
30x25
22x45
25x35
30x30
panasonic snap-in capacitor
E CAP
250v 105 K capacitor
PANASONIC CASE CODE
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PDF
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